Gallium Nitride Semiconductor Devices Market Forecasts to 2028 – Global Analysis By Product Type (Opto-Semiconductors, Radiofrequency Devices and Other Product Types), Component (Transistor, Diode, Rectifier, Power IC and Other Components), Wafer Size (1

Gallium Nitride Semiconductor Devices Market Forecasts to 2028 – Global Analysis By Product Type (Opto-Semiconductors, Radiofrequency Devices and Other Product Types), Component (Transistor, Diode, Rectifier, Power IC and Other Components), Wafer Size (1 & 2 Inch, 4 Inch, 6 Inch, 8 Inch and Other Wafer Sizes ), Application (Defense Communication Devices, Telecom & Datacom Server, Chargers & Adapters, Wireless Charging, Battery Test System and Other Applications), End User (IT & Telecommunication, Consumer Electronics, Automotive & Transportation, Aerospace & Defense & Other End User) and By Geography

According to Stratistics MRC, the Global Gallium Nitride Semiconductor Devices Market is accounted for $2.33 billion in 2022 and is expected to reach $8.66 billion by 2028 growing at a CAGR of 24.4% during the forecast period. The growth of the gallium nitride semiconductor devices market can be recognized to the advantages offered by GaN semiconductor devices over silicon devices. Silicon materials have been used for manufacturing electronic devices such as smart phones, computers, cameras, and televisions. However, the slowdown in potential innovative properties of silicon created an opportunity for GaN semiconductor devices, which are 100 times faster than silicon. The advantages offered by GaN over silicon devices include higher energy efficiency, lower costs, and faster device speed, among others are propelling the market growth.

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Market Dynamics:

Driver:

Increasing Demand in energy and power applications

The increasing demand for gallium nitride semiconductor devices in energy and power applications is because LEDs, private home battery chargers, and other modern active devices are becoming more connected. Wireless communications and high bandwidth speeds are in high demand. Many telecommunications companies are dispatching 5G infrastructure to support and backup the industry. GaN semiconductors are excellent for use in power switches. MACOM and Qorvo are developing GaN-on-Si semiconductors to meet the demand for different kinds of energy-efficient devices are driving the gallium nitride semiconductor devices market.

Restraint:

Availability of higher efficacy alternatives

Silicon carbide is an alternative which offers superior power efficiency and advanced power handling capacity for several power functions, including power rectification, power amplification, and power transmission and is perfect replacement material for silicon for high voltage power applications as it offers advanced features such as power efficiency at high voltages, high reliability in power rectification etc. However gallium nitride semiconductors offer various advantages including its extensive power efficiency; it does not possess the capacity to deliver advanced performance as that of silicon carbide in case of high voltage. Hence silicon carbide is preferred as better option for high voltage semiconductors than that of the gallium nitride are hampering the growth of the market.

Opportunity:

Sustainability of gallium nitride in RF applications

There has been a massive demand for RF semiconductor device industry which is driving the gallium nitride semiconductors market. As the RF factor is closely related to the communication sector and requires electronic devices to operate at a wide spectrum of communication frequency ranges as the application. They provide an ability to deliver high power amplification at very high frequency ranges. Moreover recent advancements in the technology of the gallium nitride are further enhancing the market growth.

Threat:

High cost of producing pure gallium nitride

The cost of producing pure gallium nitride, which has been popular semiconductor material used in high-voltage power electronics for a decade, is greater than that of silicon carbide, which is one of the key inhibitors of the worldwide market for GaN semiconductor devices. GaN device manufacturing involves a number of expenses, including those for the substrate, fabrication, packaging, support electronics, and research. Therefore, their high cost are hindering the market growth.

Covid-19 Impact

The COVID-19 global epidemic has had a negative impact on the growth of GaN manufacturers due to the blackout of larger manufacturing units. Furthermore, the pandemic has momentarily reduced demand for the electronics and automotive sectors as it severely limits the spread of the disease and has impacted the market's future opportunities. The GaN Semiconductor Devices Market is expected to be affected by various trade conflicts and relationships between countries thereby hindering the market growth.

The Opto-Semiconductors segment is expected to be the largest during the forecast period

The Opto-Semiconductors segment is estimated to have a lucrative growth, due to its viable technology implementation, opto semiconductors have standardised autonomous vehicles. Optical semiconductors have become essential to the economy's operation and the national security of data. The growing demand for opto semiconductors is introducing previously inaccessible operations into the range of possibilities. Several industrial sectors prefer outsourcing electronics manufacturing services (EMS) because it provides original and high-quality products at low costs, allowing manufacturers to gain a competitive advantage and propel the market growth.

The Transistor segment is expected to have the highest CAGR during the forecast period

The transistor segment is anticipated to witness the fastest CAGR growth during the forecast period, due to rising transistors in various electronic devices such as computer memory chips, solid-state multimedia storage devices for electronic games, cameras, MP3 players, and microprocessors, the market is witnessing demand, In addition, the manufacturers are focusing on developing more power-efficient devices with better functioning to meet the customers' demand and have a competitive edge over others. The advancement in technology for these transistors is evolving by building them with 2-D layers of tungsten diselenide (WSe2) and tin diselenide (SnSe2) are accelerating the growth of the market.

Region with highest share:

Asia Pacific is projected to hold the largest market share during the forecast period owing to Because of rapid changes in technology, there is an exponential growth for efficient and high-performance RF components. China and Japan are among the region's leading manufacturer of consumer devices, including LED display devices, smart phones, and gaming consoles. This is a crucial factor pushing regional market growth. The increased demand for strong communication devices in countries such as China, India, and South Korea is expected to drive demand for GaN-based RF devices. The significant increase in wireless electronic device adoption and the expansion of telecommunication infrastructure in the Asia Pacific region are driving the market in this region even further.

Region with highest CAGR:

Europe is projected to have the highest CAGR over the forecast period, owing to its advanced and modern technological infrastructure, and the existence of many large numbers of manufacturers’s financially rewarding presence of key players as well as the easy availability of raw materials. Furthermore, increased 5G network adoption in Europe is expected to contribute to market growth during the forecast period. The market in Europe is being driven by the increased adoption of advanced technology in the telecom and automotive sectors are boosting the market growth in European region.

Key players in the market

Some of the key players profiled in the Gallium Nitride Semiconductor Devices Market include Efficient Power Conversion Corporation, Analog Devices, Inc,CGD Cambridge GaN Devices, Cree Inc., Fujitsu, GaN Systems, NXP Semiconductor, NexgenPowerSystems, Toshiba Corporation, Texas Instruments Incorporated, RF Micro Devices Incorporated, Infineon Technologies AG, Aixtron SE, Koninklijke Philips N.V and Epigan NV

Key Developments:

In Dec 2022, EPC introduces two new 80 V AEC-Q101 qualified GaN FETs, offering designers significantly smaller and more efficient solutions than silicon MOSFETs for automotive 48 V- 12 V DC-DC conversion, infotainment, and lidar for autonomous driving, efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride (eGaN®) FETs and ICs.

In Nov 2022, EPC Launches a New Generation of eGaN Technology that Doubles Performance Efficient Power Conversion (EPC) introduces the 80 V, 4 mOhm EPC2619 GaN FET in tiny 1.5 mm x 2.5 mm footprint, offering higher performance and smaller solution size than traditional MOSFETs for high power density applications, including DC-DC conversion, motor drives, and synchronous rectification for 12 V – 20 V.

In Nov 2022, Analog Devices Announces World’s First Long-Reach, Single-pair Power over Ethernet (SPoE) Solutions for Smart Building and Factory Automation to help customers drive greater levels of intelligence into smart buildings, factory automation, and other applications at the edge of traditional networks.

Product Types Covered:
• Opto-Semiconductors
• Radiofrequency Devices
• Power Semiconductors
• Other Product Types

Components Covered:
• Transistor
• Diode
• Rectifier
• Power IC
• Controller
• Other Components

Wafer Sizes Covered:
• 1 & 2 Inch
• 4 Inch
• 6 Inch
• 8 Inch
• 12 Inch
• Other Wafer Sizes

Applications Covered:
• Defense Communication Devices
• Telecom & Datacom Server
• Chargers & Adapters
• Wireless Charging
• Battery Test System
• Energy Storage System
• HVAC
• Electronic Device
• Other Applications

End Users Covered:
• IT & Telecommunication
• Consumer Electronics
• Automotive & Transportation
• Aerospace & Defense
• Energy & Utility
• Industrial
• Other End Users

Regions Covered:
• North America
US
Canada
Mexico
• Europe
Germany
UK
Italy
France
Spain
Rest of Europe
• Asia Pacific
Japan
China
India
Australia
New Zealand
South Korea
Rest of Asia Pacific
• South America
Argentina
Brazil
Chile
Rest of South America
• Middle East & Africa
Saudi Arabia
UAE
Qatar
South Africa
Rest of Middle East & Africa

What our report offers:
- Market share assessments for the regional and country-level segments
- Strategic recommendations for the new entrants
- Covers Market data for the years 2020, 2021, 2022, 2025, and 2028
- Market Trends (Drivers, Constraints, Opportunities, Threats, Challenges, Investment Opportunities, and recommendations)
- Strategic recommendations in key business segments based on the market estimations
- Competitive landscaping mapping the key common trends
- Company profiling with detailed strategies, financials, and recent developments
- Supply chain trends mapping the latest technological advancements