Global and United States Silicon Carbide (SiC) Substrate Market Insights, Forecast to 2028
Summary
Market Analysis and Insights: Global and United States Silicon Carbide (SiC) Substrate Market
This report focuses on global and United States Silicon Carbide (SiC) Substrate market.
In 2021, the global Silicon Carbide (SiC) Substrate market size was US$ 566.25 million and it is expected to reach US$ 1,635.74 million by the end of 2028, with a CAGR of 15.45% during 2022-2028. In United States the Silicon Carbide (SiC) Substrate market size is expected to grow from US$ 187.96 million in 2021 to US$ 422.54 million by 2028, at a CAGR of 11.04% during the forecast period.
Global Silicon Carbide (SiC) Substrate Scope and Market Size
Silicon Carbide (SiC) Substrate market is segmented by region (country), by players, by Type, and by Application. Players, stakeholders, and other participants in the global Silicon Carbide (SiC) Substrate market will be able to gain the upper hand as they use the report as a powerful resource. The segmental analysis focuses on sales, revenue and forecast by Type and by Application for the period 2017-2028.
For United States market, this report focuses on the Silicon Carbide (SiC) Substrate market size by players, by Type, and by Application, for the period 2017-2028. The key players include the global and local players which play important roles in United States.
By Company
Cree (Wolfspeed)
II-VI Advanced Materials
ROHM
Norstel
SICC Materials
Showa Denko
TankeBlue Semiconductor
SK Siltron
Synlight
CENGOL
Segment by Type
4 Inch
6 Inch
8 Inch
Segment by Application
Power Devices
RF Devices
Other
By Region
North America
U.S.
Canada
Asia-Pacific
China
Japan
South Korea
India
Australia
China Taiwan
Southeast Asia
Europe
Germany
France
U.K.
Italy
Russia
Latin America
Mexico
Middle East & Africa
Learn how to effectively navigate the market research process to help guide your organization on the journey to success.
Download eBook