GaN Semiconductor Devices Market Research Report Market Forecast till 2030
GaN Semiconductor Devices Market is expected to register a CAGR of 20.5 % during the forecast period. Gallium nitride (GaN) is a paired III/V direct bandgap semiconductor that is appropriate for high-power semiconductors equipped for working at high temperatures. It is an extremely hard, precisely stable wide bandgap semiconductor that fundamentally beats silicon-based devices with regards to breakdown strength, exchanging speed, warm conductivity, and on-opposition. GaN is starting to see reception because of its better properties over silicon devices, like amazing high-recurrence attributes. As worldwide requirement for energy expands, a transition to GaN innovation will assist with fulfilling need while downplaying fossil fuel byproducts. GaN plan and joining has been displayed to convey cutting edge power semiconductors with a carbon impression multiple times lower than more seasoned, more slow silicon chips.
The market for GaN semiconductor devices is expected to create in the future because of the rising utilization of electric and half-breed electric vehicles. A vehicle with an electric engine fueled by a battery that can be charged remotely is called an electric vehicle. Electric vehicles utilize high-proficiency power semiconductors and coordinated circuits made of gallium nitride semiconductors. GaN semiconductors devices offer a few advantages over silicon, including 3x the band hole and 10x the breakdown electric field strength in electric vehicle applications.
Market SegmentationBased on Device, the GaN Semiconductor Devices Market is divided into Supply and Inverter, Transistor, Rectifier, Diode, Power IC, Amplifiers, Switching Systems, Lighting and Laser, and Others.
In terms of Vertical, the Market is classified into Automotive, Industrial, Defense & Aerospace, Consumer Electronics, Telecommunication, Medical and Others. The Type segment is further divided into Power semiconductors, RF semiconductors, and Opto semiconductors.
Regional InsightsAs far as revenue, Asia-Pacific held the biggest portion of 46.9% in the GaN Semiconductor Devices Market in 2022 and is supposed to keep up with its predominance during the conjecture time frame. The presence of central participants and an emphasis on foundation improvement in the region add to market development. The Asia Pacific market for GaN semiconductor devices is expected to develop altogether over the figure period.
North America is expected to rule the GaN semiconductor devices market over the review period due to the huge consumptions made in gallium nitride semiconductor advancements and the region's far-reaching utilization of refined gadgets across a few business verticals. GaN-based power semiconductor gadget advancement drives by the public authority are expected to increment interest in MBE frameworks in North America.
Europe is supposed to observe the quickest development in the GaN Semiconductor Devices market during the conjecture time frame because of expansion popular for semiconductor devices from the military, crisis clinical benefits, and seaward oil and gas improvement.
The GaN semiconductor devices market in Rest of the World is expected to develop considerably over the conjecture period because of the huge speculations made in gallium nitride semiconductor advancements and the broad utilization of contemporary hardware in the region's various areas.
Major PlayersThe key players in the GaN semiconductor devices market are Fujitsu Ltd., Panasonic Coporation, Texas Instruments, Osram Opto-Semiconductors, Cree Incorporate, Toshiba, AixtronSE, Infineon Technologies, ROHM Company Limited, NXP Semiconductors, KoninklijkePhilips N.V., and Others.
Companies MentionedFujitsu Ltd.
Panasonic Coporation
Texas Instruments
Osram Opto-Semiconductors
Cree Incorporate
Toshiba
AixtronSE
Infineon Technologies
ROHM Company Limited
NXP Semiconductors
KoninklijkePhilips N.V.
and Others
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