Global Industrial IGBT Power Semiconductors Market Research Report 2023-Competitive Analysis, Status and Outlook by Type, Downstream Industry, and Geography, Forecast to 2029

Global Industrial IGBT Power Semiconductors Market Research Report 2023-Competitive Analysis, Status and Outlook by Type, Downstream Industry, and Geography, Forecast to 2029

An IGBT is a semiconductor device that combines the high-speed switching performance of a power MOSFET with the high-voltage/high-current handling capabilities of a bipolar transistor and has become the mainstream development direction of switching devices in power electronics field.

IGBT can improve the efficiency of power conversion, transmission and control in various circuits, achieve the purpose of saving energy and improving industrial control level, and is widely used in industrial control systems, consumer electronics, renewable energy, transportation and other fields.

Market Overview:


The latest research study on the global Industrial IGBT Power Semiconductors market finds that the global Industrial IGBT Power Semiconductors market reached a value of USD 7794.46 million in 2022. It’s expected that the market will achieve USD 12708.22 million by 2028, exhibiting a CAGR of 8.49% during the forecast period.

The war between Russia and Ukraine has hit the global commodity market. As the conflict between Russia and Ukraine continues, soaring oil prices and concerns about supply have disrupted the raw material market. The aluminum price of London Stock Exchange has risen by 30% this year, and the prices of other metals such as copper, zinc and nickel are also soaring.

With the western sanctions against Russia extending to more and more fields, some high-tech industries have been seriously affected. As the global power semiconductors industry can not be separated from a variety of key raw materials from Russia and Ukraine, the western economy represented by the automobile industry is suffering losses. At the same time, due to the incomplete semiconductor industry in Russia, the pressure brought by the western embargo has been felt.

In addition, the Ukraine-Russia conflict makes the unstable semiconductor industry more fragile. In addition to trade sanctions, tight manufacturing capacity and other reasons, the shortage of upstream core materials and production capacity worldwide is also the main reason for the shortage of semiconductor products.

With the escalation of the conflict between Russia and Ukraine, the supply of semiconductor-related rare gases is likely to be tight. As a global supplier of semiconductor raw materials, Ukraine is a big supplier of neon, argon, krypton, xenon and other gases, among which neon is the global market leader. The decrease of special gas supply will still cause the cost increase, and the semiconductor price may rise again.

The trend of industrial automation is increasing

The development of industrial control industry is the core driving force for the transformation of manufacturing industry to middle and high end in various countries. In recent years, many countries in the world have been actively promoting the development of the industrial automation industry, and the number of automation equipment has shown a trend of rapid growth.
IGBT power semiconductor is the core component of traditional industrial control and power supply industry, such as inverter, inverter welding machine and UPS power supply. It not only improves the automation level and control precision of equipment in industrial application, but also greatly improves the application efficiency of electric energy. At the same time, it reduces the volume and weight of products, saves materials, and has a very broad application space in the future.
As the aging population increases, the demographic dividend gradually weakens, and rising labor costs will boost the level of automation in the manufacturing industry. The development of industrial automation drives the development of Industrial IGBT Power Semiconductors supply market.

Silicon Carbide MOSFETs VS IGBTs

IGBTs and MOSFETs are used in many different types of power applications, including renewable energy, aerospace, automotive and transportation. At the design phase, these widely-used power transistors are often interchangeable, although MOSFETs generally work well for lower voltages and power, while IGBTs are well adapted to higher voltages and power. With the introduction of silicon carbide, MOSFETs are more effective than ever before, offering unique benefits compared to traditional silicon components.
The excellent thermal conductivity of silicon carbide MOSFETs allows for better thermal conductivity and lower switching losses. The reduced switching losses alone (even at high voltages) mean far less heat generation, thus reducing the thermal management requirements of systems using silicon carbide MOSFETs as opposed to silicon IGBTs. This, in turn, leads to lower overall costs as well as a far more compact, weight-saving design compared. In addition, silicon carbide MOSFETs are more rugged than silicon IGBTs, making them ideal for harsh environment applications that IGBTs would find challenging, such as onboard chargers for electric vehicles or solar power systems.
Silicon carbide offers more reliable, sustainable designs with better overall efficiency, a smaller footprint, and less weight. Industrial IGBT power semiconductors products face certain substitution risks.

Region Overview:


In 2021, the share of the Industrial IGBT Power Semiconductors market in Asia Pacific stood at 55.57%.

Company Overview:


Infineon, Mitsubishi Electric, Fuji Electric were the top 3 players in the Industrial IGBT Power Semiconductors market in 2022, taking up a market share of 58.03% together.

Infineon Technologies AG (Infineon) is a provider of semiconductor solutions. The company, through its subsidiaries, designs, develops, manufactures, and markets application-specific ICs, automotive system ICs, diodes, evaluation boards, electrostatic discharge protection and electromagnetic interference protection products. It offers micro controllers, radio frequency and wireless controls, security ICs, smart card ICs, sensors, interfaces, and transistor products. The companys products are used in automotive, industrial power control, power management, consumer electronics, computing and data storage, switches and routers, sensing solutions and security in IoT applications. It has business presence across Asia Pacific, Europe, the Middle East, Africa, and the Americas. Infineon is headquartered in Neubiberg, Bayern, Germany.

Mitsubishi Electric Corporation develops, manufactures, and markets electronic equipment. The Company's products include industrial machinery, heavy electric machinery, data communications systems, electronic devices, and household electronics.

Segmentation Overview:


Among different product types, Discrete IGBT segment is anticipated to contribute the largest market share in 2027.

Discrete IGBT

IGBT is a form of a discrete semiconductor device that is generally used for power applications: power supplies, power switching, etc. The advantage of IGBT transistors is that they combine many of the features of MOSFETs and bipolar transistors providing the high voltage and current handling capabilities of bipolar transistors with the high-speed switching and low gate current performance of power MOSFETs.
IGBT Module
An IGBT power module is the assembly and physical packaging of several IGBT power semiconductor dies in one package. The dies are normally connected in a selected electrical configuration such as half-bridge, 3-level, dual, chopper, booster, etc. An IGBT power module functions as a switch and can be used to switch electrical power on and off extremely fast and with high energy efficiency. The IGBT power module is becoming the preferred device for high power applications due to its ability to enhance switching, temperature, weight and cost performance.
IPM

An IPM incorporates a control IC that has an IGBT drive circuit and a protection circuit, so it is easy to design peripheral circuits and can secure high system reliability.

Application Overview:


By application, the Industrial Control Systems segment occupied the biggest share from 2017 to 2022.

Key Companies in the global Industrial IGBT Power Semiconductors market covered in Chapter 3:

STMicroelectronics
Hangzhou Silan Microelectronics Co., Ltd.
ON Semiconductor
Danfoss
Renesas
Vincotech
StarPower Semiconductor Co., Ltd.
Toshiba
Mitsubishi Electric
Hitachi
ROHM
Fuji Electric
Infineon
Semikron

In Chapter 4 and Chapter 14.2, on the basis of types, the Industrial IGBT Power Semiconductors market from 2018 to 2029 is primarily split into:

Discrete IGBT
IGBT module
IPM

In Chapter 5 and Chapter 14.3, on the basis of Downstream Industry, the Industrial IGBT Power Semiconductors market from 2018 to 2029 covers:

Industrial Control Systems
Consumer Electronics
Renewable Energy
Transportation
Power Engineering
Others

Geographically, the detailed analysis of consumption, revenue, market share and growth rate, historic and forecast (2018-2029) of the following regions are covered in Chapter 8 to Chapter 14:

North America (United States, Canada)
Europe (Germany, UK, France, Italy, Spain, Russia, Netherlands, Turkey, Switzerland, Sweden)
Asia Pacific (China, Japan, South Korea, Australia, India, Indonesia, Philippines, Malaysia)
Latin America (Brazil, Mexico, Argentina)
Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa)