Global Gallium Nitride Substrates Market Research Report 2023-Competitive Analysis, Status and Outlook by Type, Downstream Industry, and Geography, Forecast to 2029

Global Gallium Nitride Substrates Market Research Report 2023-Competitive Analysis, Status and Outlook by Type, Downstream Industry, and Geography, Forecast to 2029

Gallium Nitride (GaN) is a wide bandgap semiconductor material with high thermal conductivity and strong radiation resistance. It is widely used in semiconductor power devices, LED lighting, radio frequency components, sensors and biomedical devices. GaN exists on substrates such as Sapphire, Si, GaN, and SiC. GaN substrates usually have high crystallinity, good uniformity, and excellent surface quality. GaN substrates can be used to fabricate LD applications (violet, blue and green), UV detectors, high frequency high power electronics, etc.

Market Overview:

The latest research study on the global Gallium Nitride Substrates market finds that the global Gallium Nitride Substrates market reached a value of USD 182.54 million in 2022. It’s expected that the market will achieve USD 351.23 million by 2028, exhibiting a CAGR of 11.53% during the forecast period.

The growing demand of the LED industry

The LED industry is one of the main application industries of GaN substrates. With the increasing popularity of electric vehicles and smart lighting applications, the GaN substrate market is expected to achieve substantial growth in the future. LED is a solid light-emitting device composed of compound semiconductors such as gallium arsenide and gallium nitride, which can convert electrical energy into light energy. LEDs made of different materials emit light of different wavelengths and colors, such as blue, violet, ultraviolet and white. Conventional LEDs are mainly used in general lighting and large outdoor displays, while Mini LEDs and Micro LEDs are used in the display of new-generation consumer electronics. The chips used in the new-generation displays are sub-millimeter and micron-level, and the technical requirements for GaN substrates are very high. Solid-state lighting LEDs based on GaN substrates not only have the advantages of high efficiency, low power consumption, and longer service life than fluorescent and incandescent bulbs, but also can improve energy utilization and durability, effectively reducing global energy demand, thereby reducing carbon emissions. In addition to the energy efficiency and environmental benefits of LEDs, they also offer consumers significant cost savings. The US Department of Energy estimates that LED lighting could reduce US lighting energy consumption by 29% by 2025, saving households around £80bn in electricity bills. In addition, the application of GaN substrates is gradually turning to the electric vehicle industry. LEDs are not only used for headlights, side lights, low beams, etc., the latest GaN power management technology that meets automotive standards can outperform traditional silicon-based charging technology Advanced car systems charge faster and drive farther. Not only will it help automakers reduce barriers to charging, but it will also help reduce negative impacts on global air quality and climate change. LED companies need to improve product quality in terms of consumer experience (life, color, appearance, efficiency, standby power) and human health (flicker, blue light, safety), which will increase the market value of LEDs and create a large demand for GaN substrates. need.

The application of GaN substrate in power supply increases

Consumers' pursuit of longer battery life and faster charging speeds has driven the market's demand for high-performance and low-cost power conversion products. The core of achieving high performance and reducing the cost of power supply products is advanced power electronics technology. Technological progress has produced high-voltage and low-voltage silicon power transistor series. Due to the limitation of silicon semiconductors in high voltage, more and more manufacturers use GaN material to replace silicon. GaN is a very hard, mechanically stable wide bandgap semiconductor. GaN-based power devices outperform silicon-based devices in terms of breakdown strength, switching speed, thermal conductivity, and on-resistance. GaN technology companies offer higher switching frequency and lower loss products, enabling high breakdown voltage and current levels without increasing die size. In addition, power applications based on GaN substrates help to save a lot of energy, such as switching functions and inverters, thereby contributing to the improvement of charging efficiency and data communication capabilities. For the medical industry, smaller and lighter power adapters can reduce the weight of medical devices, making them easier to transport, handle and use in telemedicine and other applications that require portability. Demand for electrical equipment such as generators, power control equipment, etc. is expected to increase due to the need for backup power in hospitals. When GaN is applied to life-saving equipment, high power can reduce the power consumption of the power supply, reduce the pressure on branch circuits, and save more patients' lives when the available power is limited due to natural disasters. Another benefit is that due to GaN transistors' high efficiency and excellent thermal conductivity, they don't heat up like Si and SiC transistors. Operating cooling equipment is more comfortable for workers and reduces the hazards associated with hot components in medical environments. Therefore, the superiority of GaN substrates in power applications will promote the continuous expansion of the industry.

High technical threshold

The GaN substrate industry is a typical technology-intensive industry, which has high requirements for technical personnel's knowledge background, research and development capabilities, and accumulation of operating experience. GaN substrate materials are the basic materials to support the development of the third-generation new semiconductor industry. The industrialization time is short, the technology is difficult, and the requirements for continuous research and development investment are high. At present, GaN substrates are mainly produced by hydride vapor phase epitaxy (HVPE method). Compared to other vapor deposition methods (MOCVD, MBE, etc.), HVPE offers faster growth rates (100 microns per hour) and has the advantage of less carbon impurities. However, as multiple crystals grow one after the other, the interface between the crystals is difficult to flatten. This has led to a need for more advanced fabrication equipment capable of producing GaN seed crystals of a certain thickness, which are then sliced to produce the final substrate in sheet form. Due to the high hardness and stable chemical properties of the GaN substrate, cutting, grinding, polishing and other processing are difficult. The manufacturing process involves many links such as equipment development, raw material synthesis, crystal growth, crystal cutting, wafer processing, cleaning and testing. Each link Subtle differences in the process and technology will affect the parameters and pass rate of the final product. Therefore, the improvement of GaN substrate production technology requires repeated theoretical derivation, production verification, precise material control, and long-term accumulation of a large number of process technologies. Industry participants need long-term and massive investment before they can make breakthroughs in technology. High technical threshold restricts the rapid development of the industry.

Region Overview:

In 2021, the share of the Gallium Nitride Substrates market in United States stood at 25.40%.

Company Overview:

Sumitomo Corporation, Mitsubishi Chemical Corporation, NGK Insulators Ltd were the top 3 players in the Gallium Nitride Substrates market in 2022, taking up a market share of 88.86% together.

Segmentation Overview:

By type, GaN on Si &GaN on SiC segment accounted for the largest share of market in 2021.

Application Overview:

By application, the Military and Defense segment occupied the biggest share from 2017 to 2022.

Key Companies in the global Gallium Nitride Substrates market covered in Chapter 3:

Mitsubishi Chemical Corporation
Sino Nitride Semiconductors Co. Ltd
Kyma
Sumitomo Corporation
Eta Research Ltd.
Suzhou Naowin
NGK Insulators Ltd

In Chapter 4 and Chapter 14.2, on the basis of types, the Gallium Nitride Substrates market from 2018 to 2029 is primarily split into:

GaN on Sapphire
GaN on Si &GaN on SiC
GaN on GaN
Others

In Chapter 5 and Chapter 14.3, on the basis of Downstream Industry, the Gallium Nitride Substrates market from 2018 to 2029 covers:

Health Care
Automobiles
Military and Defense
Others

Geographically, the detailed analysis of consumption, revenue, market share and growth rate, historic and forecast (2018-2029) of the following regions are covered in Chapter 8 to Chapter 14:

North America (United States, Canada)
Europe (Germany, UK, France, Italy, Spain, Russia, Netherlands, Turkey, Switzerland, Sweden)
Asia Pacific (China, Japan, South Korea, Australia, India, Indonesia, Philippines, Malaysia)
Latin America (Brazil, Mexico, Argentina)
Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa)