Global 8-inch SiC Substrate Market Growth 2025-2031

The global 8-inch SiC Substrate market size is predicted to grow from US$ 40.6 million in 2025 to US$ 2051 million in 2031; it is expected to grow at a CAGR of 92.3% from 2025 to 2031.

Silicon carbide substrates (wafers) are single-crystal wafers formed by cutting, grinding, polishing, cleaning, and other processes of silicon carbide crystals. As a semiconductor substrate material, silicon carbide wafers can be made into silicon carbide-based power devices and microwave radiofrequency devices through epitaxial growth and device manufacturing. 8-inch SiC Substrate refers to the diameter of SiC Substrates products is 8 Inch (200mm).

Global 8-inch SiC Substrate core manufacturers include II-VI Advanced Materials, ST (Norstel), Wolfspeed, Semisic and JSG, etc.The top three manufacturers account for Approximately 88% global share.

North America is the world's largest market, accounting for nearly 43% of the market share.

In terms of product types, conductive type occupies a dominant position, accounting for 85% of the market share. At the same time, in terms of applications, power components are the largest application field, accounting for 72%.

LP Information, Inc. (LPI) ' newest research report, the “8-inch SiC Substrate Industry Forecast” looks at past sales and reviews total world 8-inch SiC Substrate sales in 2024, providing a comprehensive analysis by region and market sector of projected 8-inch SiC Substrate sales for 2025 through 2031. With 8-inch SiC Substrate sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world 8-inch SiC Substrate industry.

This Insight Report provides a comprehensive analysis of the global 8-inch SiC Substrate landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on 8-inch SiC Substrate portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global 8-inch SiC Substrate market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for 8-inch SiC Substrate and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global 8-inch SiC Substrate.

This report presents a comprehensive overview, market shares, and growth opportunities of 8-inch SiC Substrate market by product type, application, key manufacturers and key regions and countries.

Segmentation by Type:

Conductive Type

Semi-insulating Type

Segmentation by Application:

Power Component

RF Device

Others

This report also splits the market by region:

Americas

United States

Canada

Mexico

Brazil

APAC

China

Japan

Korea

Southeast Asia

India

Australia

Europe

Germany

France

UK

Italy

Russia

Middle East & Africa

Egypt

South Africa

Israel

Turkey

GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the company's coverage, product portfolio, its market penetration.

II-VI Advanced Materials

ST (Norstel)

Wolfspeed

Semisic

JSG

Key Questions Addressed in this Report

What is the 10-year outlook for the global 8-inch SiC Substrate market?

What factors are driving 8-inch SiC Substrate market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do 8-inch SiC Substrate market opportunities vary by end market size?

How does 8-inch SiC Substrate break out by Type, by Application?

Please note: The report will take approximately 2 business days to prepare and deliver.