Global Silicon Carbide (SiC) Substrate Market Growth 2025-2031

The global Silicon Carbide (SiC) Substrate market size is predicted to grow from US$ 770 million in 2025 to US$ 1878 million in 2031; it is expected to grow at a CAGR of 16.0% from 2025 to 2031.

Silicon carbide substrates (wafers) are single-crystal wafers formed by cutting, grinding, polishing, cleaning, and other processes of silicon carbide crystals.

Cree, II-VI Advanced Materials and ROHM are the top 3 manufacturers of silicon carbide (SiC) substrate globally and account for over 70% of total markets share. Geographically speaking, Asia Pacific is the largest producer of silicon carbide (SiC) substrate, holds a share over 40%, followed by North America and Europe. In terms of product, 6 inch is the largest segment, with a share over 60%. And in terms of application, the largest application is power devices, followed by RF devices.

LP Information, Inc. (LPI) ' newest research report, the “Silicon Carbide (SiC) Substrate Industry Forecast” looks at past sales and reviews total world Silicon Carbide (SiC) Substrate sales in 2024, providing a comprehensive analysis by region and market sector of projected Silicon Carbide (SiC) Substrate sales for 2025 through 2031. With Silicon Carbide (SiC) Substrate sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world Silicon Carbide (SiC) Substrate industry.

This Insight Report provides a comprehensive analysis of the global Silicon Carbide (SiC) Substrate landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on Silicon Carbide (SiC) Substrate portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global Silicon Carbide (SiC) Substrate market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for Silicon Carbide (SiC) Substrate and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global Silicon Carbide (SiC) Substrate.

This report presents a comprehensive overview, market shares, and growth opportunities of Silicon Carbide (SiC) Substrate market by product type, application, key manufacturers and key regions and countries.

Segmentation by Type:
4 Inch
6 Inch
8 Inch

Segmentation by Application:
Power Device
RF Devices
Others

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the company's coverage, product portfolio, its market penetration.
Cree (Wolfspeed)
II-VI Advanced Materials
ROHM
Norstel
SICC Materials
Showa Denko
TankeBlue Semiconductor
SK Siltron
Synlight
CENGOL

Key Questions Addressed in this Report

What is the 10-year outlook for the global Silicon Carbide (SiC) Substrate market?

What factors are driving Silicon Carbide (SiC) Substrate market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do Silicon Carbide (SiC) Substrate market opportunities vary by end market size?

How does Silicon Carbide (SiC) Substrate break out by Type, by Application?

Please note: The report will take approximately 2 business days to prepare and deliver.