Global SiC Substrates Market Growth 2023-2029

Global SiC Substrates Market Growth 2023-2029

Silicon carbide (SiC), also known as carborundum, is a compound of silicon and carbon with chemical formula SiC. Silicon carbide is a semiconductor, which can be doped n-type by nitrogen or phosphorus and p-type by beryllium, boron, aluminium, or gallium. Metallic conductivity has been achieved by heavy doping with boron, aluminium or nitrogen.

SiC Substrates is a semiconductor material with unique electrical properties and excellent thermal properties , compared to silicon wafer and gallium arsenide wafer , SiC is more suitable for high temperatureand high power device .SiC Substrates can be supplied in diameter 2 inch , both 4-H or 6-H polytype N-type , Nitrogent doped , and Si face polished. It can be used in GaN epitaxy device, Optoelectronic device, High frequency device, High power device, High temperature device, Light emitting diodes.

Alpha silicon carbide (α-SiC) is the most commonly encountered polymorph; it is formed at temperatures greater than 1700 °C and has a hexagonal crystal structure (similar to Wurtzite). The beta modification (β-SiC), with a zinc blende crystal structure (similar to diamond), is formed at temperatures below 1700 °C. Until recently, the beta form has had relatively few commercial uses, although there is now increasing interest in its use as a support for heterogeneous catalysts, owing to its higher surface area compared to the alpha form.

For now, the main application of silicon carbide substrate in LED solid-state lighting field and high-frequency devices

As the basic material of the third generation semiconductor industry, silicon carbide substrate has a high application prospect and industrial value, and has an important strategic position in the development of China's semiconductor industry. For a long time, the core technology and market of silicon carbide substrate are basically monopolized by developed countries in Europe and the United States, and the larger the product size, the higher the level of technical parameters, the more obvious its technical advantages. China's silicon carbide crystal research only started in the late 1990s, and failed to achieve industrialization due to technical bottlenecks and capacity limits in the early stage of development, which is far behind the international advanced level. Since the beginning of the 21st century, under the support and guidance of the national industrial policy, the development of China's silicon carbide wafer industry has been greatly accelerated. Excellent silicon carbide substrate manufacturing enterprises with independent intellectual property rights such as Tianke Heda and Shandong Tianyue have emerged successively. Domestic enterprises to technology-driven development, deep cultivation of silicon carbide wafer and crystal manufacturing, gradually master 2 inches to 6 inches of silicon carbide crystal and wafer manufacturing technology, break the domestic silicon carbide wafer manufacturing technology gap and gradually narrow the technology gap with the developed countries.
LPI (LP Information)' newest research report, the “SiC Substrates Industry Forecast” looks at past sales and reviews total world SiC Substrates sales in 2022, providing a comprehensive analysis by region and market sector of projected SiC Substrates sales for 2023 through 2029. With SiC Substrates sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world SiC Substrates industry.
This Insight Report provides a comprehensive analysis of the global SiC Substrates landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on SiC Substrates portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms' unique position in an accelerating global SiC Substrates market.
This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for SiC Substrates and breaks down the forecast by inch, by application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global SiC Substrates.
The global SiC Substrates market size is projected to grow from US$ 555.1 million in 2022 to US$ 1792.1 million in 2029; it is expected to grow at a CAGR of 1792.1 from 2023 to 2029.
Global core SiC substrates players include Cree (Wolfspeed), II-VI Advanced Materials and ROHM etc. The top 5 companies hold a share about 56%. North America is the largest market, with a share about 34% in the world, followed by China and Europe with the same share about 26%. and 29%.The major players in China SiC Substrates market include Cree(Wolfspeed) , II‐VI Advanced Materials, TankeBlue Semiconductor, etc. The top 3 players hold about 80% of the whole market shares. East China and South China are main markets for SiC Substrates, which hold a share about 80%.
This report presents a comprehensive overview, market shares, and growth opportunities of SiC Substrates market by product inch, application, key manufacturers and key regions and countries.
Market Segmentation:
Segmentation by inch
4 Inch
6 Inch
8 Inch
Segmentation by application
Power component
RF device
Others
This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries
The below companies that are profiled have been selected based on inputs gathered from primary experts and analyzing the company's coverage, product portfolio, its market penetration.
Cree (Wolfspeed)
II-VI Advanced Materials
TankeBlue Semiconductor
SICC Materials
Beijing Cengol Semiconductor
Showa Denko (NSSMC)
Hebei Synlight Crystal
Norstel
ROHM
SK Siltron
Key Questions Addressed in this Report
What is the 10-year outlook for the global SiC Substrates market?
What factors are driving SiC Substrates market growth, globally and by region?
Which technologies are poised for the fastest growth by market and region?
How do SiC Substrates market opportunities vary by end market size?
How does SiC Substrates break out inch, application?
What are the influences of COVID-19 and Russia-Ukraine war?

Please note: The report will take approximately 2 business days to prepare and deliver.