Global SiC & GaN Power Devices Market Growth 2025-2031
The global SiC & GaN Power Devices market size is predicted to grow from US$ 1784 million in 2025 to US$ 10190 million in 2031; it is expected to grow at a CAGR of 33.7% from 2025 to 2031.
Wide-bandgap semiconductors (WBG or WBGS) are semiconductor materials which have a relatively large band gap compared to typical semiconductors. Silicon Carbide (SiC) and gallium nitride (GaN) Power Devices are the mainly used Wide-bandgap semiconductors materials.
Global SiC & GaN Power Devices main players are Infineon, Rohm, Mitsubishi, STMicro, Inc, Thales cryogenics, AIM, etc. Global top four manufacturers hold a share over 80%. Europe is the largest market, with a share nearly 35%.
LP Information, Inc. (LPI) ' newest research report, the “SiC & GaN Power Devices Industry Forecast” looks at past sales and reviews total world SiC & GaN Power Devices sales in 2024, providing a comprehensive analysis by region and market sector of projected SiC & GaN Power Devices sales for 2025 through 2031. With SiC & GaN Power Devices sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world SiC & GaN Power Devices industry.
This Insight Report provides a comprehensive analysis of the global SiC & GaN Power Devices landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on SiC & GaN Power Devices portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global SiC & GaN Power Devices market.
This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for SiC & GaN Power Devices and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global SiC & GaN Power Devices.
This report presents a comprehensive overview, market shares, and growth opportunities of SiC & GaN Power Devices market by product type, application, key manufacturers and key regions and countries.
Segmentation by Type:
GaN
SiC
Segmentation by Application:
Consumer Electronics
Automotive & Transportation
Industrial Use
Others
This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries
The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the company's coverage, product portfolio, its market penetration.
Infineon
Rohm
Mitsubishi
STMicro
Fuji
Toshiba
Microchip Technology
United Silicon Carbide Inc.
GeneSic
Efficient Power Conversion (EPC)
GaN Systems
VisIC Technologies LTD
Key Questions Addressed in this Report
What is the 10-year outlook for the global SiC & GaN Power Devices market?
What factors are driving SiC & GaN Power Devices market growth, globally and by region?
Which technologies are poised for the fastest growth by market and region?
How do SiC & GaN Power Devices market opportunities vary by end market size?
How does SiC & GaN Power Devices break out by Type, by Application?
Please note: The report will take approximately 2 business days to prepare and deliver.