Global SiC & GaN Power Devices Market Growth 2023-2029

Global SiC & GaN Power Devices Market Growth 2023-2029

Wide-bandgap semiconductors (WBG or WBGS) are semiconductor materials which have a relatively large band gap compared to typical semiconductors. Silicon Carbide (SiC) and gallium nitride (GaN) Power Devices are the mainly used Wide-bandgap semiconductors materials.

LPI (LP Information)' newest research report, the “SiC & GaN Power Devices Industry Forecast” looks at past sales and reviews total world SiC & GaN Power Devices sales in 2022, providing a comprehensive analysis by region and market sector of projected SiC & GaN Power Devices sales for 2023 through 2029. With SiC & GaN Power Devices sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world SiC & GaN Power Devices industry.

This Insight Report provides a comprehensive analysis of the global SiC & GaN Power Devices landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on SiC & GaN Power Devices portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms' unique position in an accelerating global SiC & GaN Power Devices market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for SiC & GaN Power Devices and breaks down the forecast by type, by application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global SiC & GaN Power Devices.

The global SiC & GaN Power Devices market size is projected to grow from US$ 1020.2 million in 2022 to US$ 7797.3 million in 2029; it is expected to grow at a CAGR of 7797.3 from 2023 to 2029.

Global SiC & GaN Power Devices main players are Infineon, Rohm, Mitsubishi, STMicro, Inc, Thales cryogenics, AIM, etc. Global top four manufacturers hold a share over 80%. Europe is the largest market, with a share nearly 35%.

This report presents a comprehensive overview, market shares, and growth opportunities of SiC & GaN Power Devices market by product type, application, key manufacturers and key regions and countries.

Market Segmentation:

Segmentation by type
GaN
SiC

Segmentation by application
Consumer Electronics
Automotive & Transportation
Industrial Use
Others

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analyzing the company's coverage, product portfolio, its market penetration.
Infineon
Rohm
Mitsubishi
STMicro
Fuji
Toshiba
Microchip Technology
United Silicon Carbide Inc.
GeneSic
Efficient Power Conversion (EPC)
GaN Systems
VisIC Technologies LTD

Key Questions Addressed in this Report

What is the 10-year outlook for the global SiC & GaN Power Devices market?

What factors are driving SiC & GaN Power Devices market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do SiC & GaN Power Devices market opportunities vary by end market size?

How does SiC & GaN Power Devices break out type, application?

What are the influences of COVID-19 and Russia-Ukraine war?

Please note: The report will take approximately 2 business days to prepare and deliver.