Global SiC and GaN Gate Drivers Market Growth 2024-2030

Global SiC and GaN Gate Drivers Market Growth 2024-2030

SiC-MOSFETs and GaN-MOSFETs, the next generation power devices, have very low loss during high-frequency switching operation, enabling the downsizing of passive components without compromising the conversion efficiency of the system. For this reason, SiC-MOSFETs and GaN-MOSFETs are attracting attention as next-generation power devices, and are beginning to be used in a wide range of applications, including power supplies for EVs and servers, industrial equipment, UPS (uninterruptible power supplies), and Photovoltaic Power conditioner. The transition from Si to SiC and GaN power devices will allow for higher power capacity and higher switching frequency ranges.

The global SiC and GaN Gate Drivers market size is projected to grow from US$ 549 million in 2024 to US$ 850 million in 2030; it is expected to grow at a CAGR of 7.6% from 2024 to 2030.

LP Information, Inc. (LPI) ' newest research report, the “SiC and GaN Gate Drivers Industry Forecast” looks at past sales and reviews total world SiC and GaN Gate Drivers sales in 2023, providing a comprehensive analysis by region and market sector of projected SiC and GaN Gate Drivers sales for 2024 through 2030. With SiC and GaN Gate Drivers sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world SiC and GaN Gate Drivers industry.

This Insight Report provides a comprehensive analysis of the global SiC and GaN Gate Drivers landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on SiC and GaN Gate Drivers portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global SiC and GaN Gate Drivers market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for SiC and GaN Gate Drivers and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global SiC and GaN Gate Drivers.

Disruptive new applications, like electric vehicles (EVs) and energy storage systems (ESS), are creating demand for ultra-efficient, high power density, high frequency SiC power converters. On-board traction motor drives are looking at the highest power density to reduce size and weight and gain new efficiency records, while off-board fast chargers are seeking for high voltages (up to 2000 VDC, >150 kW) and complex high frequency topologies, resulting in a total system cost reduction on magnetics, mechanics, and assembly. On top of that, these new applications are also pushing the developments of innovative, multicore control processors, and are able to manage complex control algorithms and assure system efficiency and stability when working in bidirectional mode—from the ac grid to the dc load and vice versa.



This report presents a comprehensive overview, market shares, and growth opportunities of SiC and GaN Gate Drivers market by product type, application, key manufacturers and key regions and countries.

Segmentation by Type:
SiC Gate Drivers
GaN Gate Drivers

Segmentation by Application:
Automotive
Industrial
Consumer Electronics
Communications
Others

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the company's coverage, product portfolio, its market penetration.
STMicroelectronics
Infineon
Rohm Semiconductor
ON Semiconductor
Microchip Technology
Renesas Electronics
NXP Semiconductors
Power Integrations
Texas Instruments
Allegro MicroSystems
Analog Devices
Broadcom
Diodes
Littelfuse
Wolfspeed
Efficient Power Conversion
MPS
Skyworks
Navitas
Cissoid

Key Questions Addressed in this Report

What is the 10-year outlook for the global SiC and GaN Gate Drivers market?

What factors are driving SiC and GaN Gate Drivers market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do SiC and GaN Gate Drivers market opportunities vary by end market size?

How does SiC and GaN Gate Drivers break out by Type, by Application?



Please note: The report will take approximately 2 business days to prepare and deliver.