Global SiC Based Power Electronic Market Growth 2023-2029

Global SiC Based Power Electronic Market Growth 2023-2029

SiC for power electronics:Silicon carbide (SiC) is a growing alternative to silicon based electronics components especially in wide bandgap applications. The material offers a unique combination of greater power efficiency, smaller size, lighter weight and lower overall cost of the systems.Silicon Carbide could be the key to the future of sustainable energy. SiC power semiconductors can increase the efficiency of energy conversion, withstand higher voltages and currents, and withstand higher operating temperatures than conventional silicon-based devices. All of these factors offer essential advantages for devices such as data center power supplies, wind or solar power modules, and electric vehicle drive converters.

LPI (LP Information)' newest research report, the “SiC Based Power Electronic Industry Forecast” looks at past sales and reviews total world SiC Based Power Electronic sales in 2022, providing a comprehensive analysis by region and market sector of projected SiC Based Power Electronic sales for 2023 through 2029. With SiC Based Power Electronic sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world SiC Based Power Electronic industry.

This Insight Report provides a comprehensive analysis of the global SiC Based Power Electronic landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on SiC Based Power Electronic portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms' unique position in an accelerating global SiC Based Power Electronic market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for SiC Based Power Electronic and breaks down the forecast by type, by application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global SiC Based Power Electronic.

The global SiC Based Power Electronic market size is projected to grow from US$ million in 2022 to US$ million in 2029; it is expected to grow at a CAGR of % from 2023 to 2029.

United States market for SiC Based Power Electronic is estimated to increase from US$ million in 2022 to US$ million by 2029, at a CAGR of % from 2023 through 2029.

China market for SiC Based Power Electronic is estimated to increase from US$ million in 2022 to US$ million by 2029, at a CAGR of % from 2023 through 2029.

Europe market for SiC Based Power Electronic is estimated to increase from US$ million in 2022 to US$ million by 2029, at a CAGR of % from 2023 through 2029.

Global key SiC Based Power Electronic players cover STMicroelectronics, Cree, Inc., ON Semiconductor, ROHM CO., LTD., Infineon Technologies AG, NXP Semiconductor NV, ABB Group, Renesas Electronics Corporation and Fuji Electric Co, Ltd., etc. In terms of revenue, the global two largest companies occupied for a share nearly % in 2022.

This report presents a comprehensive overview, market shares, and growth opportunities of SiC Based Power Electronic market by product type, application, key manufacturers and key regions and countries.

Market Segmentation:

Segmentation by type
Silicon-based MOSFET
Silicon-based IGBT

Segmentation by application
Automotive
Consumer Electronics
IT & Telecommunication
Aerospace & Defense
Others

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analyzing the company's coverage, product portfolio, its market penetration.
STMicroelectronics
Cree, Inc.
ON Semiconductor
ROHM CO., LTD.
Infineon Technologies AG
NXP Semiconductor NV
ABB Group
Renesas Electronics Corporation
Fuji Electric Co, Ltd.
Mitsubishi Electric Corp.

Key Questions Addressed in this Report

What is the 10-year outlook for the global SiC Based Power Electronic market?

What factors are driving SiC Based Power Electronic market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do SiC Based Power Electronic market opportunities vary by end market size?

How does SiC Based Power Electronic break out type, application?

What are the influences of COVID-19 and Russia-Ukraine war?

Please note: The report will take approximately 2 business days to prepare and deliver.