Global Power GaN IC Fabless Market Growth (Status and Outlook) 2024-2030

Global Power GaN IC Fabless Market Growth (Status and Outlook) 2024-2030


GaN, a wide bandgap semiconductor material featuring high-frequency and low on-resistance, has become the centerpiece in the ongoing revolution of the power semiconductor industry. In semiconductor industry, there are two models: IDM model and Fabless model.

This report studies the Power GaN ICs fabless. The key power Gallium nitride (GaN) fabless houses include Navitas Semiconductor, Power Integrations, Inc., Efficient Power Conversion Corporation (EPC), MACOM, VisIC Technologies, and Cambridge GaN Devices (CGD), etc.

The global Power GaN IC Fabless market size is projected to grow from US$ 161 million in 2024 to US$ 769 million in 2030; it is expected to grow at a CAGR of 29.7% from 2024 to 2030.

LPI (LP Information)' newest research report, the “Power GaN IC Fabless Industry Forecast” looks at past sales and reviews total world Power GaN IC Fabless sales in 2022, providing a comprehensive analysis by region and market sector of projected Power GaN IC Fabless sales for 2023 through 2029. With Power GaN IC Fabless sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world Power GaN IC Fabless industry.

This Insight Report provides a comprehensive analysis of the global Power GaN IC Fabless landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyses the strategies of leading global companies with a focus on Power GaN IC Fabless portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global Power GaN IC Fabless market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for Power GaN IC Fabless and breaks down the forecast by Technology, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global Power GaN IC Fabless.

United States market for Power GaN IC Fabless is estimated to increase from US$ million in 2023 to US$ million by 2030, at a CAGR of % from 2024 through 2030.

China market for Power GaN IC Fabless is estimated to increase from US$ million in 2023 to US$ million by 2030, at a CAGR of % from 2024 through 2030.

Europe market for Power GaN IC Fabless is estimated to increase from US$ million in 2023 to US$ million by 2030, at a CAGR of % from 2024 through 2030.

Global key Power GaN IC Fabless players cover Navitas Semiconductor, Power Integrations, Inc., Efficient Power Conversion Corporation (EPC), VisIC Technologies, Cambridge GaN Devices (CGD), etc. In terms of revenue, the global two largest companies occupied for a share nearly % in 2023.

This report presents a comprehensive overview, market shares, and growth opportunities of Power GaN IC Fabless market by product type, application, key players and key regions and countries.

Segmentation by Technology:
D-mode HEMT
E-mode HEMT

Segmentation by Application:
Consumer Electronics
Telecom & Datacom
Industrial
Automotive Electronics
Defense & Aerospace
Renewable & Energy Storage
Others

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

Segmentation by Technology:
D-mode HEMT
E-mode HEMT

Segmentation by Application:
Consumer Electronics
Telecom & Datacom
Industrial
Automotive Electronics
Defense & Aerospace
Renewable & Energy Storage
Others

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analyzing the company's coverage, product portfolio, its market penetration.
Navitas Semiconductor
Power Integrations, Inc.
Efficient Power Conversion Corporation (EPC)
VisIC Technologies
Cambridge GaN Devices (CGD)
Wise Integration
Ampleon
GaNext
Panasonic
CloudSemi
GaNPower
Southchip Semiconductor Technology
Nanjing Xinkansen Technology

Please note: The report will take approximately 2 business days to prepare and deliver.


*This is a tentative TOC and the final deliverable is subject to change.*
1 Scope of the Report
2 Executive Summary
3 Power GaN IC Fabless Market Size by Player
4 Power GaN IC Fabless by Region
5 Americas
6 APAC
7 Europe
8 Middle East & Africa
9 Market Drivers, Challenges and Trends
10 Global Power GaN IC Fabless Market Forecast
11 Key Players Analysis
12 Research Findings and Conclusion

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