Global Power GaN Chips IDM Market Growth (Status and Outlook) 2024-2030

Global Power GaN Chips IDM Market Growth (Status and Outlook) 2024-2030

GaN, a wide bandgap semiconductor material featuring high-frequency and low on-resistance, has become the centerpiece in the ongoing revolution of the power semiconductor industry. In semiconductor industry, there are two models: IDM model and Fabless model. IDM model enables in-house control of the entire process from design, manufacturing to testing. With an integrated operational framework, the IDM model offers unmatched coordination and synergy while ensuring the quality of power semiconductor products. It provides stable production capacities, enables swift innovation through synergistic design and process iterations and supports cost-effective scaling. While advanced process technologies significantly enhance digital chip performance, the functionality of analog chips — especially power semiconductor chips — largely hinges on the intrinsic properties of the semiconductor materials employed. Different materials have distinct bandgap, carrier mobility, electrical and thermal conductivity and other properties, resulting in varied performance and applications. As a result, the IDM model, which enables in-house control of the entire process from design, manufacturing to testing, has been the mainstream operational framework in the broader power semiconductor industry. The global top five power semiconductor companies all adopted the IDM model. In the rapidly evolving GaN power semiconductor industry, this model continues to prove to be the most effective.

This report studies the power GaN devices (IDM model). The typical IDMs include Innoscience, Infineon (GaN Systems), Wolfspeed, STMicroelectronics, Renesas Electronics (Transphorm), Texas Instruments, Epistar Corp., China Resources Microelectronics Limited, CorEnergy, Dynax Semiconductor, Sanan Optoelectronics, Rohm, etc.

The global Power GaN Chips IDM market size is projected to grow from US$ 172 million in 2024 to US$ 557 million in 2030; it is expected to grow at a CAGR of 21.6% from 2024 to 2030.

LPI (LP Information)' newest research report, the “Power GaN Chips IDM Industry Forecast” looks at past sales and reviews total world Power GaN Chips IDM sales in 2022, providing a comprehensive analysis by region and market sector of projected Power GaN Chips IDM sales for 2023 through 2029. With Power GaN Chips IDM sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world Power GaN Chips IDM industry.

This Insight Report provides a comprehensive analysis of the global Power GaN Chips IDM landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyses the strategies of leading global companies with a focus on Power GaN Chips IDM portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global Power GaN Chips IDM market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for Power GaN Chips IDM and breaks down the forecast by Technology, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global Power GaN Chips IDM.

United States market for Power GaN Chips IDM is estimated to increase from US$ million in 2023 to US$ million by 2030, at a CAGR of % from 2024 through 2030.

China market for Power GaN Chips IDM is estimated to increase from US$ million in 2023 to US$ million by 2030, at a CAGR of % from 2024 through 2030.

Europe market for Power GaN Chips IDM is estimated to increase from US$ million in 2023 to US$ million by 2030, at a CAGR of % from 2024 through 2030.

Global key Power GaN Chips IDM players cover Infineon (GaN Systems), Renesas Electronics (Transphorm), Wolfspeed, Inc, Innoscience, STMicroelectronics, etc. In terms of revenue, the global two largest companies occupied for a share nearly % in 2023.

This report presents a comprehensive overview, market shares, and growth opportunities of Power GaN Chips IDM market by product type, application, key players and key regions and countries.

Segmentation by Technology:
GaN-on-Si E-mode
GaN-on-Si D-mode

Segmentation by Application:
GaN Power Discrete
GaN Power IC

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

Segmentation by Technology:
GaN-on-Si E-mode
GaN-on-Si D-mode

Segmentation by Application:
GaN Power Discrete
GaN Power IC

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analyzing the company's coverage, product portfolio, its market penetration.
Infineon (GaN Systems)
Renesas Electronics (Transphorm)
Wolfspeed, Inc
Innoscience
STMicroelectronics
Texas Instruments
onsemi
Microchip Technology
Rohm
NXP Semiconductors
Sumitomo Electric Device Innovations (SEDI) (SCIOCS)
Qorvo
Toshiba
Alpha and Omega Semiconductor Limited (AOS)
Nexperia
Epistar Corp.
CETC 13
CETC 55
China Resources Microelectronics Limited
CorEnergy
Sanan Optoelectronics
Hangzhou Silan Microelectronics
Qingdao Cohenius Microelectronics
Dynax Semiconductor
Guangdong ZIENER Technology
Nuvoton Technology Corporation
Toyoda Gosei

Please note: The report will take approximately 2 business days to prepare and deliver.