Global Metal Oxide Insulated Gate Transistor (MOSIGT) Market Growth 2024-2030

Global Metal Oxide Insulated Gate Transistor (MOSIGT) Market Growth 2024-2030


Metal Oxide Insulated Gate Transistor (MOSIGT) is a power semiconductor device and majorly finds application in switch, pulse modulation and phase control among others. This device is something of a cross between a conventional Bipolar Junction Transistor, (BJT) and a Field Effect Transistor, (MOSFET) making it ideal as a semiconductor switching device.

The global Metal Oxide Insulated Gate Transistor (MOSIGT) market size is projected to grow from US$ 6288.2 million in 2023 to US$ 8594.4 million in 2030; it is expected to grow at a CAGR of 4.6% from 2024 to 2030.

LP Information, Inc. (LPI) ' newest research report, the “Metal Oxide Insulated Gate Transistor (MOSIGT) Industry Forecast” looks at past sales and reviews total world Metal Oxide Insulated Gate Transistor (MOSIGT) sales in 2023, providing a comprehensive analysis by region and market sector of projected Metal Oxide Insulated Gate Transistor (MOSIGT) sales for 2024 through 2030. With Metal Oxide Insulated Gate Transistor (MOSIGT) sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world Metal Oxide Insulated Gate Transistor (MOSIGT) industry.

This Insight Report provides a comprehensive analysis of the global Metal Oxide Insulated Gate Transistor (MOSIGT) landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on Metal Oxide Insulated Gate Transistor (MOSIGT) portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global Metal Oxide Insulated Gate Transistor (MOSIGT) market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for Metal Oxide Insulated Gate Transistor (MOSIGT) and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global Metal Oxide Insulated Gate Transistor (MOSIGT).

The growing demand for electric vehicles and increasing demand for high-voltage operating devices has led to higher adoption of MOSIGT in energy and power, automotive, consumer electronics, and industrial. Hence, the global MOSIGT market is expected to witness moderate growth in the near future owing to high speed switching rate and optimized power loss. However, leakage current at high temperature hinders the market growth. Government initiatives to establish high voltage direct current (HVDC) and smart grids utilizing MOSIGT for power conversion will provide lucrative opportunities for the market.

This report presents a comprehensive overview, market shares, and growth opportunities of Metal Oxide Insulated Gate Transistor (MOSIGT) market by product type, application, key manufacturers and key regions and countries.

Segmentation by type


Discrete

Module
Segmentation by application


New-Energy Vehicles

Consumer Electronics

New Energy Power Generation

Industrial Control

Rail Transportation

Others
This report also splits the market by region:


Americas
United States
Canada
Mexico
Brazil

APAC
China
Japan
Korea
Southeast Asia
India
Australia

Europe
Germany
France
UK
Italy
Russia

Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries
The below companies that are profiled have been selected based on inputs gathered from primary experts and analyzing the company's coverage, product portfolio, its market penetration.


Infineon Technologies

Mitsubishi Electric

Fuji Electric

NXP Semiconductors

ON Semiconductor

STMicroelectronics

SEMIKRON

Hitachi

Danfoss

Renesas Electronics

Toshiba

ABB

Littelfuse (IXYS)

Vishay

ROHM

Fairchild Semiconductor International
Key Questions Addressed in this Report

What is the 10-year outlook for the global Metal Oxide Insulated Gate Transistor (MOSIGT) market?

What factors are driving Metal Oxide Insulated Gate Transistor (MOSIGT) market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do Metal Oxide Insulated Gate Transistor (MOSIGT) market opportunities vary by end market size?

How does Metal Oxide Insulated Gate Transistor (MOSIGT) break out type, application?


Please note: The report will take approximately 2 business days to prepare and deliver.


*This is a tentative TOC and the final deliverable is subject to change.*
1 Scope of the Report
2 Executive Summary
3 Global Metal Oxide Insulated Gate Transistor (MOSIGT) by Company
4 World Historic Review for Metal Oxide Insulated Gate Transistor (MOSIGT) by Geographic Region
5 Americas
6 APAC
7 Europe
8 Middle East & Africa
9 Market Drivers, Challenges and Trends
10 Manufacturing Cost Structure Analysis
11 Marketing, Distributors and Customer
12 World Forecast Review for Metal Oxide Insulated Gate Transistor (MOSIGT) by Geographic Region
13 Key Players Analysis
14 Research Findings and Conclusion

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