Global Magnetoresistive Random Access Memory Market Growth 2025-2031

Global Magnetoresistive Random Access Memory Market Growth 2025-2031

The global Magnetoresistive Random Access Memory market size is predicted to grow from US$ 185 million in 2025 to US$ 402 million in 2031; it is expected to grow at a CAGR of 13.8% from 2025 to 2031.

MRAM, also known as magneto resistive RAM or magnetic RAM, is a type of non volatile RAM memory which uses magnetic charges in order to store data.

Global core MRAM manufacturers include Everspin Technologies, Avalanche Technology, Honeywell etc.The top 3 companies hold a share about 47%.North America is the largest market, with a share about 75%, followed by Europe and Asia Pacific with the share about 15% and 5%.

In terms of product, toggle MRAM is the largest segment, with a share over 70%. And in terms of application, the largest application is aerospace, followed by automotive.

LP Information, Inc. (LPI) ' newest research report, the “Magnetoresistive Random Access Memory Industry Forecast” looks at past sales and reviews total world Magnetoresistive Random Access Memory sales in 2024, providing a comprehensive analysis by region and market sector of projected Magnetoresistive Random Access Memory sales for 2025 through 2031. With Magnetoresistive Random Access Memory sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world Magnetoresistive Random Access Memory industry.

This Insight Report provides a comprehensive analysis of the global Magnetoresistive Random Access Memory landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on Magnetoresistive Random Access Memory portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global Magnetoresistive Random Access Memory market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for Magnetoresistive Random Access Memory and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global Magnetoresistive Random Access Memory.

This report presents a comprehensive overview, market shares, and growth opportunities of Magnetoresistive Random Access Memory market by product type, application, key manufacturers and key regions and countries.

Segmentation by Type:
1M
2M
4M
Others

Segmentation by Application:
Aerospace
Automotive
Communications/Mobile Infrastructure
Defense/Military
Others

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the company's coverage, product portfolio, its market penetration.
Everspin
NXP
Renesas
Honeywell
STMicroelectronics

Key Questions Addressed in this Report

What is the 10-year outlook for the global Magnetoresistive Random Access Memory market?

What factors are driving Magnetoresistive Random Access Memory market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do Magnetoresistive Random Access Memory market opportunities vary by end market size?

How does Magnetoresistive Random Access Memory break out by Type, by Application?

Please note: The report will take approximately 2 business days to prepare and deliver.