Global LV GaN HEMTs Market Growth 2023-2029

Global LV GaN HEMTs Market Growth 2023-2029

The global LV GaN HEMTs market size is projected to grow from US$ million in 2022 to US$ million in 2029; it is expected to grow at a CAGR of % from 2023 to 2029.

United States market for LV GaN HEMTs is estimated to increase from US$ million in 2022 to US$ million by 2029, at a CAGR of % from 2023 through 2029.

China market for LV GaN HEMTs is estimated to increase from US$ million in 2022 to US$ million by 2029, at a CAGR of % from 2023 through 2029.

Europe market for LV GaN HEMTs is estimated to increase from US$ million in 2022 to US$ million by 2029, at a CAGR of % from 2023 through 2029.

Global key LV GaN HEMTs players cover Infineon Technologies, Qorvo, ROHM, Toshiba, Innoscience, Sumitomo Electric Industries, STMicroelectronics, Wolfspeed and NXP Semiconductors, etc. In terms of revenue, the global two largest companies occupied for a share nearly % in 2022.

GaN (Gallium Nitride) is a compound semiconductor material used in next-generation power devices. It is beginning to see adoption due to its superior properties over silicon devices, such as excellent high-frequency characteristics.

LPI (LP Information)' newest research report, the “LV GaN HEMTs Industry Forecast” looks at past sales and reviews total world LV GaN HEMTs sales in 2022, providing a comprehensive analysis by region and market sector of projected LV GaN HEMTs sales for 2023 through 2029. With LV GaN HEMTs sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world LV GaN HEMTs industry.

This Insight Report provides a comprehensive analysis of the global LV GaN HEMTs landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on LV GaN HEMTs portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms' unique position in an accelerating global LV GaN HEMTs market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for LV GaN HEMTs and breaks down the forecast by type, by application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global LV GaN HEMTs.

This report presents a comprehensive overview, market shares, and growth opportunities of LV GaN HEMTs market by product type, application, key manufacturers and key regions and countries.

Market Segmentation:

Segmentation by type
40V
100V
150V
Others

Segmentation by application
Consumer (Charger, Adapter)
Appliance Motor Drives
Industrial Power Supplies
Audio Amplifier
UPS, Telecom, Datacenter & Servers
Solar Inverter
Others

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analyzing the company's coverage, product portfolio, its market penetration.
Infineon Technologies
Qorvo
ROHM
Toshiba
Innoscience
Sumitomo Electric Industries
STMicroelectronics
Wolfspeed
NXP Semiconductors
MACOM
Transphorm
GaN Systems
Mitsubishi Electric Corp
GaNPower International
CETC 13
CETC 55
EPC
Ampleon
Teledyne Defense Electronics

Key Questions Addressed in this Report

What is the 10-year outlook for the global LV GaN HEMTs market?

What factors are driving LV GaN HEMTs market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do LV GaN HEMTs market opportunities vary by end market size?

How does LV GaN HEMTs break out type, application?

What are the influences of COVID-19 and Russia-Ukraine war?

Please note: The report will take approximately 2 business days to prepare and deliver.