Global Insulated Gate Bipolar Transistors (IGBTs) Module Market Growth 2025-2031

The global Insulated Gate Bipolar Transistors (IGBTs) Module market size is predicted to grow from US$ 4238 million in 2025 to US$ 6380 million in 2031; it is expected to grow at a CAGR of 7.1% from 2025 to 2031.

Insulated gate bipolar transistor (IGBT) is a compound full-controlled voltage-driven semiconductor power device composed of bipolar transistor (BJT) and MOSFET. It combines the high input impedance of MOSFET and the low of bipolar transistor (BJT).

Insulated gate bipolar transistor (IGBT) is a compound full-controlled voltage-driven semiconductor power device composed of bipolar transistor (BJT) and MOSFET. It combines the high input impedance of MOSFET and the low of bipolar transistor (BJT).

Advancements in IGBT Technology: Ongoing research and development efforts have led to advancements in IGBT technology, resulting in higher switching speeds, lower conduction losses, and increased power density. These advancements have improved the overall performance and efficiency of IGBT modules.

Rise of Electric Vehicles (EVs): The rapid adoption of electric vehicles has increased the demand for IGBT modules used in electric drivetrains and power electronics systems. IGBT modules play a crucial role in converting and controlling electrical power in EVs.

LP Information, Inc. (LPI) ' newest research report, the “Insulated Gate Bipolar Transistors (IGBTs) Module Industry Forecast” looks at past sales and reviews total world Insulated Gate Bipolar Transistors (IGBTs) Module sales in 2024, providing a comprehensive analysis by region and market sector of projected Insulated Gate Bipolar Transistors (IGBTs) Module sales for 2025 through 2031. With Insulated Gate Bipolar Transistors (IGBTs) Module sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world Insulated Gate Bipolar Transistors (IGBTs) Module industry.

This Insight Report provides a comprehensive analysis of the global Insulated Gate Bipolar Transistors (IGBTs) Module landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on Insulated Gate Bipolar Transistors (IGBTs) Module portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global Insulated Gate Bipolar Transistors (IGBTs) Module market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for Insulated Gate Bipolar Transistors (IGBTs) Module and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global Insulated Gate Bipolar Transistors (IGBTs) Module.

This report presents a comprehensive overview, market shares, and growth opportunities of Insulated Gate Bipolar Transistors (IGBTs) Module market by product type, application, key manufacturers and key regions and countries.

Segmentation by Type:
Less than 600V
600V to 1200V
1200V to 1700V
1700V to 3300V
More Than 3300V

Segmentation by Application:
Industrial
4C
Rail Traction
Renewables
Medical
Defense and Aerospace
Smart Grid
Others

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the company's coverage, product portfolio, its market penetration.
Mitsubishi Electric
Infineon Technologies (IR)
Fuji Electric
SEMIKRON
Hitachi
Vincotech
ON Semiconductor (Fairchild)
ABB
IXYS Corporation
Starpower Semiconductor
CRRC
Vishay
MacMic
Bosch
Danfoss

Key Questions Addressed in this Report

What is the 10-year outlook for the global Insulated Gate Bipolar Transistors (IGBTs) Module market?

What factors are driving Insulated Gate Bipolar Transistors (IGBTs) Module market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do Insulated Gate Bipolar Transistors (IGBTs) Module market opportunities vary by end market size?

How does Insulated Gate Bipolar Transistors (IGBTs) Module break out by Type, by Application?

Please note: The report will take approximately 2 business days to prepare and deliver.