Global InGaAs PIN Photodiode Market Growth 2025-2031

The global InGaAs PIN Photodiode market size is predicted to grow from US$ 132 million in 2025 to US$ 175 million in 2031; it is expected to grow at a CAGR of 4.8% from 2025 to 2031.

A p–i–n photodiode, also called PIN photodiode, is a photodiode with an intrinsic (i) region in between the n- and p-doped regions. Most of the photons are absorbed in the intrinsic region, and carriers generated therein can efficiently contribute to the photocurrent.

Main players in the global InGaAs PIN photodiode industry are Hamamatsu, OSI Optoelectronics and GCS. These 3 companies accounts for over a third of global market share in total. Geographically speaking, Asia-Pacific is the largest market, accounting for over 40% of total market share, followed by North America with over 25% market share. In terms of active area diameter, below 1mm segment and 1 mm segment accounts for over half of total market share. In terms of application, analytical instruments is the largest end user and covers over 35% of total market share.

LP Information, Inc. (LPI) ' newest research report, the “InGaAs PIN Photodiode Industry Forecast” looks at past sales and reviews total world InGaAs PIN Photodiode sales in 2024, providing a comprehensive analysis by region and market sector of projected InGaAs PIN Photodiode sales for 2025 through 2031. With InGaAs PIN Photodiode sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world InGaAs PIN Photodiode industry.

This Insight Report provides a comprehensive analysis of the global InGaAs PIN Photodiode landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on InGaAs PIN Photodiode portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global InGaAs PIN Photodiode market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for InGaAs PIN Photodiode and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global InGaAs PIN Photodiode.

This report presents a comprehensive overview, market shares, and growth opportunities of InGaAs PIN Photodiode market by product type, application, key manufacturers and key regions and countries.

Segmentation by Type:
Active Area Diameter Below 1mm
Active Area Diameter 1mm
Active Area Diameter 1.5mm
Active Area Diameter 2mm
Active Area Diameter 3mm
Others

Segmentation by Application:
Analytical Instruments
Communications
Measurement Equipment
Others

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the company's coverage, product portfolio, its market penetration.
Kyoto Semiconductor
Hamamatsu
First Sensor (TE)
Excelitas
OSI Optoelectronics
GCS
Laser Components
Go!Foton
Ushio
Qphotonics
N.E.P.
Albis Optoelectronics
AC Photonics
Voxtel (Allegro MicroSystems)
Fermionics Opto-Technology
PHOGRAIN
Thorlabs
Shengshi Optical
CLPT
Optoway

Key Questions Addressed in this Report

What is the 10-year outlook for the global InGaAs PIN Photodiode market?

What factors are driving InGaAs PIN Photodiode market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do InGaAs PIN Photodiode market opportunities vary by end market size?

How does InGaAs PIN Photodiode break out by Type, by Application?

Please note: The report will take approximately 2 business days to prepare and deliver.


*This is a tentative TOC and the final deliverable is subject to change.*
1 Scope of the Report
2 Executive Summary
3 Global by Company
4 World Historic Review for InGaAs PIN Photodiode by Geographic Region
5 Americas
6 APAC
7 Europe
8 Middle East & Africa
9 Market Drivers, Challenges and Trends
10 Manufacturing Cost Structure Analysis
11 Marketing, Distributors and Customer
12 World Forecast Review for InGaAs PIN Photodiode by Geographic Region
13 Key Players Analysis
14 Research Findings and Conclusion

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