Global IGBT and Thyristor Market Growth 2024-2030

Global IGBT and Thyristor Market Growth 2024-2030

According to our LPI (LP Information) latest study, the global IGBT and Thyristor market size was valued at US$ 5567.4 million in 2023. With growing demand in downstream market, the IGBT and Thyristor is forecast to a readjusted size of US$ 8369.1 million by 2030 with a CAGR of 6.0% during review period.

The research report highlights the growth potential of the global IGBT and Thyristor market. IGBT and Thyristor are expected to show stable growth in the future market. However, product differentiation, reducing costs, and supply chain optimization remain crucial for the widespread adoption of IGBT and Thyristor. Market players need to invest in research and development, forge strategic partnerships, and align their offerings with evolving consumer preferences to capitalize on the immense opportunities presented by the IGBT and Thyristor market.

The insulated gate bipolar transistor (IGBT) and thyristor provide the advantage over metal-oxide-semiconductor field effect transistor (MOSFET) for minimum switching time and switching losses. In addition, it also provides the advantage over elevated breakdown voltage and less conduction losses of the bipolar junction transistor (BJT) in order to meet current power need. FACTS systems and HVDC use power electronic converters for power conversion and control power quality. Earlier, IGBTs and thyristors were used as key components in HVDC and FACTS converters for many years and now have been developed for higher power use. These devices also use high breakdown voltage and conduction losses in BJT to fulfill current power requirement.

Key Features:

The report on IGBT and Thyristor market reflects various aspects and provide valuable insights into the industry.

Market Size and Growth: The research report provide an overview of the current size and growth of the IGBT and Thyristor market. It may include historical data, market segmentation by Type (e.g., High Power, Medium Power), and regional breakdowns.

Market Drivers and Challenges: The report can identify and analyse the factors driving the growth of the IGBT and Thyristor market, such as government regulations, environmental concerns, technological advancements, and changing consumer preferences. It can also highlight the challenges faced by the industry, including infrastructure limitations, range anxiety, and high upfront costs.

Competitive Landscape: The research report provides analysis of the competitive landscape within the IGBT and Thyristor market. It includes profiles of key players, their market share, strategies, and product offerings. The report can also highlight emerging players and their potential impact on the market.

Technological Developments: The research report can delve into the latest technological developments in the IGBT and Thyristor industry. This include advancements in IGBT and Thyristor technology, IGBT and Thyristor new entrants, IGBT and Thyristor new investment, and other innovations that are shaping the future of IGBT and Thyristor.

Downstream Procumbent Preference: The report can shed light on customer procumbent behaviour and adoption trends in the IGBT and Thyristor market. It includes factors influencing customer ' purchasing decisions, preferences for IGBT and Thyristor product.

Government Policies and Incentives: The research report analyse the impact of government policies and incentives on the IGBT and Thyristor market. This may include an assessment of regulatory frameworks, subsidies, tax incentives, and other measures aimed at promoting IGBT and Thyristor market. The report also evaluates the effectiveness of these policies in driving market growth.

Environmental Impact and Sustainability: The research report assess the environmental impact and sustainability aspects of the IGBT and Thyristor market.

Market Forecasts and Future Outlook: Based on the analysis conducted, the research report provide market forecasts and outlook for the IGBT and Thyristor industry. This includes projections of market size, growth rates, regional trends, and predictions on technological advancements and policy developments.

Recommendations and Opportunities: The report conclude with recommendations for industry stakeholders, policymakers, and investors. It highlights potential opportunities for market players to capitalize on emerging trends, overcome challenges, and contribute to the growth and development of the IGBT and Thyristor market.

Market Segmentation:

IGBT and Thyristor market is split by Type and by Application. For the period 2019-2030, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value.

Segmentation by type
High Power
Medium Power
Low Power

Segmentation by application
Flexible AC Transmission System (FACTS)
HVDC

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analyzing the company's coverage, product portfolio, its market penetration.
Fuji Electric
ABB
Infineon Technologies
ON Semiconductor
Hitachi
Mitsubishi Electric
Littelfuse (IXYS)
Toshiba
SEMIKRON
Danfoss
STARPOWER SEMICONDUCTOR

Key Questions Addressed in this Report

What is the 10-year outlook for the global IGBT and Thyristor market?

What factors are driving IGBT and Thyristor market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do IGBT and Thyristor market opportunities vary by end market size?

How does IGBT and Thyristor break out type, application?

Please note: The report will take approximately 2 business days to prepare and deliver.