Global IGBT and SiC Module Market Growth 2023-2029

Global IGBT and SiC Module Market Growth 2023-2029

According to our LPI (LP Information) latest study, the global IGBT and SiC Module market size was valued at US$ 6223.6 million in 2022. With growing demand in downstream market and recovery from influence of COVID-19 and the Russia-Ukraine War, the IGBT and SiC Module is forecast to a readjusted size of US$ 21270 million by 2029 with a CAGR of 19.2% during review period.

The research report highlights the growth potential of the global IGBT and SiC Module market. With recovery from influence of COVID-19 and the Russia-Ukraine War, IGBT and SiC Module are expected to show stable growth in the future market. However, product differentiation, reducing costs, and supply chain optimization remain crucial for the widespread adoption of IGBT and SiC Module. Market players need to invest in research and development, forge strategic partnerships, and align their offerings with evolving consumer preferences to capitalize on the immense opportunities presented by the IGBT and SiC Module market.

This report studies the IGBT modules and Silicon Carbide (SiC) Modules.

An IGBT Power Module is a power semiconductor component used in power electronic devices in several industries as they have high-power efficiency, high blocking voltage, and ability to work in low power. An IGBT Power Module is formed by arranging several IGBTs in parallel in a single casing.

Silicon carbide as a semiconductor has a wide band-gap, used in MOSFET it has very low switching losses and therefore allows higher switching frequencies compared to regular silicon devices. At the same time, it can be operated at higher temperatures and at higher voltages compared to traditional Si semiconductors. The use of SiC power semiconductors is expected to grow exponentially due to its crucial efficiency characteristics that enables cost reductions while at the same time improving system performance in a variety of applications such as EV chargers, solar inverters, e-mobility, and motor drives.

The global key players of IGBT Power Module include Infineon, Mitsubishi Electric (Vincotech), Fuji Electric, Semikron Danfoss, StarPower Semiconductor, BYD, and Zhuzhou CRRC Times Electric, etc. The global six biggest players hold a share of 77 %.

The key players of SiC MOSFET modules are STMicroelectronics, Infineon, Wolfspeed, Rohm, Onsemi, BYD Semiconductor, Microchip (Microsemi), Mitsubishi Electric (Vincotech) and Semikron Danfoss, etc. The top three players hold a share over 70 percent in 2022.

Key Features:

The report on IGBT and SiC Module market reflects various aspects and provide valuable insights into the industry.

Market Size and Growth: The research report provide an overview of the current size and growth of the IGBT and SiC Module market. It may include historical data, market segmentation by Type (e.g., IGBT Modules, SiC Modules), and regional breakdowns.

Market Drivers and Challenges: The report can identify and analyse the factors driving the growth of the IGBT and SiC Module market, such as government regulations, environmental concerns, technological advancements, and changing consumer preferences. It can also highlight the challenges faced by the industry, including infrastructure limitations, range anxiety, and high upfront costs.

Competitive Landscape: The research report provides analysis of the competitive landscape within the IGBT and SiC Module market. It includes profiles of key players, their market share, strategies, and product offerings. The report can also highlight emerging players and their potential impact on the market.

Technological Developments: The research report can delve into the latest technological developments in the IGBT and SiC Module industry. This include advancements in IGBT and SiC Module technology, IGBT and SiC Module new entrants, IGBT and SiC Module new investment, and other innovations that are shaping the future of IGBT and SiC Module.

Downstream Procumbent Preference: The report can shed light on customer procumbent behaviour and adoption trends in the IGBT and SiC Module market. It includes factors influencing customer ' purchasing decisions, preferences for IGBT and SiC Module product.

Government Policies and Incentives: The research report analyse the impact of government policies and incentives on the IGBT and SiC Module market. This may include an assessment of regulatory frameworks, subsidies, tax incentives, and other measures aimed at promoting IGBT and SiC Module market. The report also evaluates the effectiveness of these policies in driving market growth.

Environmental Impact and Sustainability: The research report assess the environmental impact and sustainability aspects of the IGBT and SiC Module market.

Market Forecasts and Future Outlook: Based on the analysis conducted, the research report provide market forecasts and outlook for the IGBT and SiC Module industry. This includes projections of market size, growth rates, regional trends, and predictions on technological advancements and policy developments.

Recommendations and Opportunities: The report conclude with recommendations for industry stakeholders, policymakers, and investors. It highlights potential opportunities for market players to capitalize on emerging trends, overcome challenges, and contribute to the growth and development of the IGBT and SiC Module market.

Market Segmentation:

IGBT and SiC Module market is split by Type and by Application. For the period 2018-2029, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value.

Segmentation by type
IGBT Modules
SiC Modules

Segmentation by application
Automotive & EV/HEV
Industrial Control
Consumer Appliances
Wind power, PV, Energy Storage
Rail Transport
UPS, Data Center & Server
Military & Avionics
Others

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analyzing the company's coverage, product portfolio, its market penetration.
Infineon
Mitsubishi Electric (Vincotech)
Fuji Electric
Semikron Danfoss
Hitachi Power Semiconductor Device
Bosch
onsemi
Toshiba
Littelfuse (IXYS)
Microchip (Microsemi)
STMicroelectronics
Vishay
Denso
SanRex Corporation
Cissoid
StarPower Semiconductor
BYD
Zhuzhou CRRC Times Electric
Hangzhou Silan Microelectronics
MacMic Science & Technology
China Resources Microelectronics Limited
Yangzhou Yangjie Electronic Technology
EcoSemitek
BASiC Semiconductor
SemiQ
GE Aerospace
Guangdong AccoPower Semiconductor

Key Questions Addressed in this Report

What is the 10-year outlook for the global IGBT and SiC Module market?

What factors are driving IGBT and SiC Module market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do IGBT and SiC Module market opportunities vary by end market size?

How does IGBT and SiC Module break out type, application?

What are the influences of COVID-19 and Russia-Ukraine war?

Please note: The report will take approximately 2 business days to prepare and deliver.