Global IGBT and SiC Module for Automotive Market Growth 2024-2030

Global IGBT and SiC Module for Automotive Market Growth 2024-2030


This report studies the IGBT modules and Silicon Carbide (SiC) Modules for EV (Electric Vehicle), used in Main Inverter (Electric Traction), OBC and DC-DC. An IGBT Power Module is a power semiconductor component used in power electronic devices in several industries as they have high-power efficiency, high blocking voltage, and ability to work in low power. An IGBT Power Module is formed by arranging several IGBTs in parallel in a single casing. Silicon carbide as a semiconductor has a wide band-gap, used in MOSFET it has very low switching losses and therefore allows higher switching frequencies compared to regular silicon devices. At the same time, it can be operated at higher temperatures and at higher voltages compared to traditional Si semiconductors. The use of SiC power semiconductors is expected to grow exponentially due to its crucial efficiency characteristics that enables cost reductions while at the same time improving system performance in a variety of applications such as EV chargers, solar inverters, e-mobility, and motor drives.

The global IGBT and SiC Module for Automotive market size is projected to grow from US$ 4470 million in 2024 to US$ 13360 million in 2030; it is expected to grow at a CAGR of 20.0% from 2024 to 2030.

LP Information, Inc. (LPI) ' newest research report, the “IGBT and SiC Module for Automotive Industry Forecast” looks at past sales and reviews total world IGBT and SiC Module for Automotive sales in 2023, providing a comprehensive analysis by region and market sector of projected IGBT and SiC Module for Automotive sales for 2024 through 2030. With IGBT and SiC Module for Automotive sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world IGBT and SiC Module for Automotive industry.

This Insight Report provides a comprehensive analysis of the global IGBT and SiC Module for Automotive landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on IGBT and SiC Module for Automotive portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global IGBT and SiC Module for Automotive market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for IGBT and SiC Module for Automotive and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global IGBT and SiC Module for Automotive.

The key players of IGBT and SiC Module for Automotive include Infineon, STMicroelectronics, Fuji Electric, Mitsubishi Electric, Semikron Danfoss, BYD, etc. The top six players hold a share about 80%. Asia-Pacific is the largest market, with a share about 71%. In terms of product type, Automotive IGBT Modules is the largest segment, which occupied for a share of about 70%. For application, Main Inverter (Electric Traction) is the largest segment, which has a share about 80%.

This report presents a comprehensive overview, market shares, and growth opportunities of IGBT and SiC Module for Automotive market by product type, application, key manufacturers and key regions and countries.

Segmentation by Type:
Automotive IGBT Modules
Automotive SiC Modules

Segmentation by Application:
Main Inverter (Electric Traction)
Electric Vehicle Charging Post
Others

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the company's coverage, product portfolio, its market penetration.
Infineon
STMicroelectronics
Fuji Electric
Mitsubishi Electric
Semikron Danfoss
BYD
Bosch
onsemi
Zhuzhou CRRC Times Electric
StarPower Semiconductor
Wolfspeed
MacMic Science & Technology
Hangzhou Silan Microelectronics
Hitachi Power Semiconductor Device
United Nova Technology
Rohm
Microchip (Microsemi)
Guangdong AccoPower Semiconductor
Grecon Semiconductor (Shanghai)

Key Questions Addressed in this Report

What is the 10-year outlook for the global IGBT and SiC Module for Automotive market?

What factors are driving IGBT and SiC Module for Automotive market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do IGBT and SiC Module for Automotive market opportunities vary by end market size?

How does IGBT and SiC Module for Automotive break out by Type, by Application?

Please note: The report will take approximately 2 business days to prepare and deliver.


*This is a tentative TOC and the final deliverable is subject to change.*
1 Scope of the Report
2 Executive Summary
3 Global by Company
4 World Historic Review for IGBT and SiC Module for Automotive by Geographic Region
5 Americas
6 APAC
7 Europe
8 Middle East & Africa
9 Market Drivers, Challenges and Trends
10 Manufacturing Cost Structure Analysis
11 Marketing, Distributors and Customer
12 World Forecast Review for IGBT and SiC Module for Automotive by Geographic Region
13 Key Players Analysis
14 Research Findings and Conclusion

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