Global High-Side FET Drivers Market Growth 2025-2031

The global High-Side FET Drivers market size is predicted to grow from US$ 410 million in 2025 to US$ 737 million in 2031; it is expected to grow at a CAGR of 10.3% from 2025 to 2031.

High-side FET driver is an electronic component designed to control an N-channel MOSFET (or other types of FETs) in a high-side switching configuration. In such a configuration, the switch (typically a MOSFET) is placed between the load and the positive supply voltage. High-side FET drivers are essential because they enable the required voltage difference between the gate and source of the MOSFET to turn it on, especially when the source is tied to a higher voltage, such as the positive supply rail.

The global intelligent power switches market is expected to witness robust growth through 2023 due to rising demand of intelligent power switches in automotive and industrial application across globe.

LP Information, Inc. (LPI) ' newest research report, the “High-Side FET Drivers Industry Forecast” looks at past sales and reviews total world High-Side FET Drivers sales in 2024, providing a comprehensive analysis by region and market sector of projected High-Side FET Drivers sales for 2025 through 2031. With High-Side FET Drivers sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world High-Side FET Drivers industry.

This Insight Report provides a comprehensive analysis of the global High-Side FET Drivers landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on High-Side FET Drivers portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global High-Side FET Drivers market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for High-Side FET Drivers and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global High-Side FET Drivers.

This report presents a comprehensive overview, market shares, and growth opportunities of High-Side FET Drivers market by product type, application, key manufacturers and key regions and countries.

Segmentation by Type:
Single Channel
Multi Channel

Segmentation by Application:
Automotive
Industrial

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the company's coverage, product portfolio, its market penetration.
STMicroelectronics
Infineon
Diodes lncorporated
ROHM
Renesas
Fuji Electric
Texas Instruments
Microchip
onsemi
Toshiba

Key Questions Addressed in this Report

What is the 10-year outlook for the global High-Side FET Drivers market?

What factors are driving High-Side FET Drivers market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do High-Side FET Drivers market opportunities vary by end market size?

How does High-Side FET Drivers break out by Type, by Application?

Please note: The report will take approximately 2 business days to prepare and deliver.