Global High Power Discrete IGBT Market Growth 2023-2029

Global High Power Discrete IGBT Market Growth 2023-2029

The global High Power Discrete IGBT market size is projected to grow from US$ 963.6 million in 2022 to US$ 2033 million in 2029; it is expected to grow at a CAGR of 11.3% from 2023 to 2029.

United States market for High Power Discrete IGBT is estimated to increase from US$ million in 2022 to US$ million by 2029, at a CAGR of % from 2023 through 2029.

China market for High Power Discrete IGBT is estimated to increase from US$ million in 2022 to US$ million by 2029, at a CAGR of % from 2023 through 2029.

Europe market for High Power Discrete IGBT is estimated to increase from US$ million in 2022 to US$ million by 2029, at a CAGR of % from 2023 through 2029.

Global key High Power Discrete IGBT players cover Infineon Technologies AG, Fuji Electric, ON Semiconductor, Mitsubishi Electric Corporation, STMicroelectronics, Renesas Electronics Corporation, Vishay Intertechnology, ABB and SEMIKRON, etc. In terms of revenue, the global two largest companies occupied for a share nearly % in 2022.

LPI (LP Information)' newest research report, the “High Power Discrete IGBT Industry Forecast” looks at past sales and reviews total world High Power Discrete IGBT sales in 2022, providing a comprehensive analysis by region and market sector of projected High Power Discrete IGBT sales for 2023 through 2029. With High Power Discrete IGBT sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world High Power Discrete IGBT industry.

This Insight Report provides a comprehensive analysis of the global High Power Discrete IGBT landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on High Power Discrete IGBT portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms' unique position in an accelerating global High Power Discrete IGBT market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for High Power Discrete IGBT and breaks down the forecast by type, by application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global High Power Discrete IGBT.

This report presents a comprehensive overview, market shares, and growth opportunities of High Power Discrete IGBT market by product type, application, key manufacturers and key regions and countries.

Market Segmentation:

Segmentation by type
<400 V
600–650 V
1,200–1,700 V
2,500–3,300 V
>4,500 V

Segmentation by application
Energy and Power
Consumer Electronics
Inverter and UPS
Electric Vehicle
Industrial System
Other

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analyzing the company's coverage, product portfolio, its market penetration.
Infineon Technologies AG
Fuji Electric
ON Semiconductor
Mitsubishi Electric Corporation
STMicroelectronics
Renesas Electronics Corporation
Vishay Intertechnology
ABB
SEMIKRON
Hitachi

Key Questions Addressed in this Report

What is the 10-year outlook for the global High Power Discrete IGBT market?

What factors are driving High Power Discrete IGBT market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do High Power Discrete IGBT market opportunities vary by end market size?

How does High Power Discrete IGBT break out type, application?

What are the influences of COVID-19 and Russia-Ukraine war?

Please note: The report will take approximately 2 business days to prepare and deliver.