Global HV GaN HEMTs Market Growth 2023-2029

Global HV GaN HEMTs Market Growth 2023-2029

The global HV GaN HEMTs market size is projected to grow from US$ 133.6 million in 2022 to US$ 336.6 million in 2029; it is expected to grow at a CAGR of 14.1% from 2023 to 2029.

United States market for HV GaN HEMTs is estimated to increase from US$ million in 2022 to US$ million by 2029, at a CAGR of % from 2023 through 2029.

China market for HV GaN HEMTs is estimated to increase from US$ million in 2022 to US$ million by 2029, at a CAGR of % from 2023 through 2029.

Europe market for HV GaN HEMTs is estimated to increase from US$ million in 2022 to US$ million by 2029, at a CAGR of % from 2023 through 2029.

Global key HV GaN HEMTs players cover Infineon Technologies, Qorvo, ROHM, Toshiba, Innoscience, Sumitomo Electric Industries, STMicroelectronics, Wolfspeed and NXP Semiconductors, etc. In terms of revenue, the global two largest companies occupied for a share nearly % in 2022.

GaN (Gallium Nitride) is a compound semiconductor material used in next-generation power devices. It is beginning to see adoption due to its superior properties over silicon devices, such as excellent high-frequency characteristics.

LPI (LP Information)' newest research report, the “HV GaN HEMTs Industry Forecast” looks at past sales and reviews total world HV GaN HEMTs sales in 2022, providing a comprehensive analysis by region and market sector of projected HV GaN HEMTs sales for 2023 through 2029. With HV GaN HEMTs sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world HV GaN HEMTs industry.

This Insight Report provides a comprehensive analysis of the global HV GaN HEMTs landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on HV GaN HEMTs portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms' unique position in an accelerating global HV GaN HEMTs market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for HV GaN HEMTs and breaks down the forecast by type, by application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global HV GaN HEMTs.

This report presents a comprehensive overview, market shares, and growth opportunities of HV GaN HEMTs market by product type, application, key manufacturers and key regions and countries.

Market Segmentation:

Segmentation by type
600V
650V
700V
Others (like 400V)

Segmentation by application
Consumer (Charger, Adapter)
Appliance Motor Drives
Industrial Power Supplies
Audio Amplifier
UPS, Telecom, Datacenter & Servers
Solar Inverter
Wireless Communication
Others

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analyzing the company's coverage, product portfolio, its market penetration.
Infineon Technologies
Qorvo
ROHM
Toshiba
Innoscience
Sumitomo Electric Industries
STMicroelectronics
Wolfspeed
NXP Semiconductors
MACOM
Transphorm
GaN Systems
Mitsubishi Electric Corp
GaNPower International
CETC 13
CETC 55
EPC
Ampleon
Teledyne Defense Electronics

Key Questions Addressed in this Report

What is the 10-year outlook for the global HV GaN HEMTs market?

What factors are driving HV GaN HEMTs market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do HV GaN HEMTs market opportunities vary by end market size?

How does HV GaN HEMTs break out type, application?

What are the influences of COVID-19 and Russia-Ukraine war?

Please note: The report will take approximately 2 business days to prepare and deliver.