Global HBM2E DRAM Market Growth 2024-2030

Global HBM2E DRAM Market Growth 2024-2030

HBM2E was first announced by JEDEC in 2018, supporting a bandwidth of up to 307 GB/s per die, allowing for a maximum stack size of 12 dies, and increasing the maximum memory per stack to a whopping 24 GB. Since then, Samsung and SK Hynix have both announced their own variants of HBM2E. Both support stacks of up to 8 dies and 16 GB of memory, but they offer even greater bandwidth. Samsung’s HBM2E offers a bandwidth of 410 GB/s while SK Hynix’ takes it even further to 460 GB/s.

The global HBM2E DRAM market size is projected to grow from US$ million in 2024 to US$ million in 2030; it is expected to grow at a CAGR of %from 2024 to 2030.

LP Information, Inc. (LPI) ' newest research report, the “HBM2E DRAM Industry Forecast” looks at past sales and reviews total world HBM2E DRAM sales in 2023, providing a comprehensive analysis by region and market sector of projected HBM2E DRAM sales for 2024 through 2030. With HBM2E DRAM sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world HBM2E DRAM industry.

This Insight Report provides a comprehensive analysis of the global HBM2E DRAM landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on HBM2E DRAM portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global HBM2E DRAM market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for HBM2E DRAM and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global HBM2E DRAM.

United States market for HBM2E DRAM is estimated to increase from US$ million in 2023 to US$ million by 2030, at a CAGR of % from 2024 through 2030.

China market for HBM2E DRAM is estimated to increase from US$ million in 2023 to US$ million by 2030, at a CAGR of % from 2024 through 2030.

Europe market for HBM2E DRAM is estimated to increase from US$ million in 2023 to US$ million by 2030, at a CAGR of % from 2024 through 2030.

Global key HBM2E DRAM players cover SK Hynix, Samsung, etc. In terms of revenue, the global two largest companies occupied for a share nearly

% in 2023.

This report presents a comprehensive overview, market shares, and growth opportunities of HBM2E DRAM market by product type, application, key manufacturers and key regions and countries.

Segmentation by Type:
8 G
16 G

Segmentation by Application:
Servers
Networking
Consumer
Others

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the company's coverage, product portfolio, its market penetration.
SK Hynix
Samsung

Key Questions Addressed in this Report

What is the 10-year outlook for the global HBM2E DRAM market?

What factors are driving HBM2E DRAM market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do HBM2E DRAM market opportunities vary by end market size?

How does HBM2E DRAM break out by Type, by Application?

Please note: The report will take approximately 2 business days to prepare and deliver.