Global Gate Driver ICs for GaN HEMTs Market Growth 2023-2029

Global Gate Driver ICs for GaN HEMTs Market Growth 2023-2029

The global Gate Driver ICs for GaN HEMTs market size is projected to grow from US$ 16 million in 2022 to US$ 23 million in 2029; it is expected to grow at a CAGR of 5.9% from 2023 to 2029.

United States market for Gate Driver ICs for GaN HEMTs is estimated to increase from US$ million in 2022 to US$ million by 2029, at a CAGR of % from 2023 through 2029.

China market for Gate Driver ICs for GaN HEMTs is estimated to increase from US$ million in 2022 to US$ million by 2029, at a CAGR of % from 2023 through 2029.

Europe market for Gate Driver ICs for GaN HEMTs is estimated to increase from US$ million in 2022 to US$ million by 2029, at a CAGR of % from 2023 through 2029.

Global key Gate Driver ICs for GaN HEMTs players cover Infineon Technologies AG, Texas Instruments, STMicroelectronics, Texas Instruments, uPI Semiconductor, On Semi and Monolithic Power Systems (MPS), etc. In terms of revenue, the global two largest companies occupied for a share nearly % in 2022.

Gallium Nitride FET-based power conversion systems offer higher efficiency, increased power density, and lower overall system cost than silicon based alternatives. These advantageous characteristics have spurred the presence of an ever increasing ecosystem of power electronics components such as gate drivers, controllers, and passive components that specifically enhance eGaN FET performance.

LPI (LP Information)' newest research report, the “Gate Driver ICs for GaN HEMTs Industry Forecast” looks at past sales and reviews total world Gate Driver ICs for GaN HEMTs sales in 2022, providing a comprehensive analysis by region and market sector of projected Gate Driver ICs for GaN HEMTs sales for 2023 through 2029. With Gate Driver ICs for GaN HEMTs sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world Gate Driver ICs for GaN HEMTs industry.

This Insight Report provides a comprehensive analysis of the global Gate Driver ICs for GaN HEMTs landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on Gate Driver ICs for GaN HEMTs portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms' unique position in an accelerating global Gate Driver ICs for GaN HEMTs market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for Gate Driver ICs for GaN HEMTs and breaks down the forecast by type, by application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global Gate Driver ICs for GaN HEMTs.

This report presents a comprehensive overview, market shares, and growth opportunities of Gate Driver ICs for GaN HEMTs market by product type, application, key manufacturers and key regions and countries.

Market Segmentation:

Segmentation by type
Gate Driver ICs for GaN SG HEMTs
Gate Driver ICs for GaN GIT HEMTs

Segmentation by application
Industrial
Telecom
Data Center
Others

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analyzing the company's coverage, product portfolio, its market penetration.
Infineon Technologies AG
Texas Instruments
STMicroelectronics
Texas Instruments
uPI Semiconductor
On Semi
Monolithic Power Systems (MPS)

Key Questions Addressed in this Report

What is the 10-year outlook for the global Gate Driver ICs for GaN HEMTs market?

What factors are driving Gate Driver ICs for GaN HEMTs market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do Gate Driver ICs for GaN HEMTs market opportunities vary by end market size?

How does Gate Driver ICs for GaN HEMTs break out type, application?

What are the influences of COVID-19 and Russia-Ukraine war?

Please note: The report will take approximately 2 business days to prepare and deliver.