Global Gallium Nitride and Silicon Carbide Discrete Devices Market Growth 2023-2029

Global Gallium Nitride and Silicon Carbide Discrete Devices Market Growth 2023-2029

The global Gallium Nitride and Silicon Carbide Discrete Devices market size is projected to grow from US$ million in 2022 to US$ million in 2029; it is expected to grow at a CAGR of % from 2023 to 2029.

United States market for Gallium Nitride and Silicon Carbide Discrete Devices is estimated to increase from US$ million in 2022 to US$ million by 2029, at a CAGR of % from 2023 through 2029.

China market for Gallium Nitride and Silicon Carbide Discrete Devices is estimated to increase from US$ million in 2022 to US$ million by 2029, at a CAGR of % from 2023 through 2029.

Europe market for Gallium Nitride and Silicon Carbide Discrete Devices is estimated to increase from US$ million in 2022 to US$ million by 2029, at a CAGR of % from 2023 through 2029.

Global key Gallium Nitride and Silicon Carbide Discrete Devices players cover Infineon, CREE, Onsemi, Toshiba, Fuji Electric, Mitsubishi Electric, Rohm, ST Microelectronics and Renesas Electronics, etc. In terms of revenue, the global two largest companies occupied for a share nearly % in 2022.

LPI (LP Information)' newest research report, the “Gallium Nitride and Silicon Carbide Discrete Devices Industry Forecast” looks at past sales and reviews total world Gallium Nitride and Silicon Carbide Discrete Devices sales in 2022, providing a comprehensive analysis by region and market sector of projected Gallium Nitride and Silicon Carbide Discrete Devices sales for 2023 through 2029. With Gallium Nitride and Silicon Carbide Discrete Devices sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world Gallium Nitride and Silicon Carbide Discrete Devices industry.

This Insight Report provides a comprehensive analysis of the global Gallium Nitride and Silicon Carbide Discrete Devices landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on Gallium Nitride and Silicon Carbide Discrete Devices portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms' unique position in an accelerating global Gallium Nitride and Silicon Carbide Discrete Devices market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for Gallium Nitride and Silicon Carbide Discrete Devices and breaks down the forecast by type, by application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global Gallium Nitride and Silicon Carbide Discrete Devices.

This report presents a comprehensive overview, market shares, and growth opportunities of Gallium Nitride and Silicon Carbide Discrete Devices market by product type, application, key manufacturers and key regions and countries.

Market Segmentation:

Segmentation by type
SiC Discrete Devices
GaN Discrete Devices

Segmentation by application
Consumer Electronics
Telecommunication
Industrial Motor
Automotive Industry
Other

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analyzing the company's coverage, product portfolio, its market penetration.
Infineon
CREE
Onsemi
Toshiba
Fuji Electric
Mitsubishi Electric
Rohm
ST Microelectronics
Renesas Electronics
Sanan Optoelectronics
Silan
China Resources Microelectronics Limited
Wingtech

Key Questions Addressed in this Report

What is the 10-year outlook for the global Gallium Nitride and Silicon Carbide Discrete Devices market?

What factors are driving Gallium Nitride and Silicon Carbide Discrete Devices market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do Gallium Nitride and Silicon Carbide Discrete Devices market opportunities vary by end market size?

How does Gallium Nitride and Silicon Carbide Discrete Devices break out type, application?

What are the influences of COVID-19 and Russia-Ukraine war?

Please note: The report will take approximately 2 business days to prepare and deliver.