Global Gallium Nitride (GaN) Wafer Fabrication Market Growth 2024-2030

Global Gallium Nitride (GaN) Wafer Fabrication Market Growth 2024-2030

GaN has emerged as a revolutionary semiconductor material with several distinct advantages over incumbent technologies in both power electronics and radio frequency (RF) applications. GaN’s versatility, combined with its ability to operate at high frequencies and handle high power densities, positions it as a pivotal technology driving innovation in power electronics, telecommunications, aerospace and defense, and beyond.

This report studies the GaN wafer fabrication, include the foundry model and IDM model. The key players of GaN foundries are TSMC, GlobalFoundries (GF), X-Fab, United Microelectronics Corporation (UMC), VIS (Vanguard International Semiconductor), WIN Semiconductors Corp., Episil Technology Inc., Sanan IC and Chengdu Hiwafer Semiconductor. While the key IDMs are Infineon (GaN Systems), STMicroelectronics, Texas Instruments, onsemi, Wolfspeed, Inc, Renesas Electronics (Transphorm), Sumitomo Electric Device Innovations (SEDI) (SCIOCS), and Innoscience, etc.

The global Gallium Nitride (GaN) Wafer Fabrication market size is projected to grow from US$ 852 million in 2024 to US$ 2620 million in 2030; it is expected to grow at a CAGR of 20.6% from 2024 to 2030.

LP Information, Inc. (LPI) ' newest research report, the “Gallium Nitride (GaN) Wafer Fabrication Industry Forecast” looks at past sales and reviews total world Gallium Nitride (GaN) Wafer Fabrication sales in 2023, providing a comprehensive analysis by region and market sector of projected Gallium Nitride (GaN) Wafer Fabrication sales for 2024 through 2030. With Gallium Nitride (GaN) Wafer Fabrication sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world Gallium Nitride (GaN) Wafer Fabrication industry.

This Insight Report provides a comprehensive analysis of the global Gallium Nitride (GaN) Wafer Fabrication landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on Gallium Nitride (GaN) Wafer Fabrication portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global Gallium Nitride (GaN) Wafer Fabrication market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for Gallium Nitride (GaN) Wafer Fabrication and breaks down the forecast by Technology, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global Gallium Nitride (GaN) Wafer Fabrication.

United States market for Gallium Nitride (GaN) Wafer Fabrication is estimated to increase from US$ million in 2023 to US$ million by 2030, at a CAGR of % from 2024 through 2030.

China market for Gallium Nitride (GaN) Wafer Fabrication is estimated to increase from US$ million in 2023 to US$ million by 2030, at a CAGR of % from 2024 through 2030.

Europe market for Gallium Nitride (GaN) Wafer Fabrication is estimated to increase from US$ million in 2023 to US$ million by 2030, at a CAGR of % from 2024 through 2030.

Global key Gallium Nitride (GaN) Wafer Fabrication players cover Infineon (GaN Systems), Renesas Electronics (Transphorm), Wolfspeed, Inc, Innoscience, STMicroelectronics, etc. In terms of revenue, the global two largest companies occupied for a share nearly

% in 2023.

This report presents a comprehensive overview, market shares, and growth opportunities of Gallium Nitride (GaN) Wafer Fabrication market by product type, application, key manufacturers and key regions and countries.

Segmentation by Technology:
GaN Wafer Foundry
GaN Wafer IDM Model

Segmentation by Application:
GaN Power Devices
GaN RF Devices

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the company's coverage, product portfolio, its market penetration.
Infineon (GaN Systems)
Renesas Electronics (Transphorm)
Wolfspeed, Inc
Innoscience
STMicroelectronics
Texas Instruments
onsemi
Microchip Technology
Rohm
NXP Semiconductors
TSMC
GlobalFoundries (GF)
United Microelectronics Corporation (UMC)
VIS (Vanguard International Semiconductor)
X-Fab
WIN Semiconductors Corp.
Episil Technology Inc.
UMS RF
Sanan IC
Chengdu Hiwafer Semiconductor
Samsung Electronics
BelGaN
DB HiTek
WAVICE Inc
SK keyfoundry
BAE Systems
Odyssey Semiconductor
Taiwan-Asia Semiconductor (TASC)
Sumitomo Electric Device Innovations (SEDI) (SCIOCS)
Qorvo
Toshiba
Alpha and Omega Semiconductor Limited (AOS)
Nexperia
Epistar Corp.
CETC 13
CETC 55
China Resources Microelectronics Limited
CorEnergy
Sanan Optoelectronics
Hangzhou Silan Microelectronics
Qingdao Cohenius Microelectronics
Dynax Semiconductor
Guangdong ZIENER Technology
Nuvoton Technology Corporation
Toyoda Gosei

Key Questions Addressed in this Report

What is the 10-year outlook for the global Gallium Nitride (GaN) Wafer Fabrication market?

What factors are driving Gallium Nitride (GaN) Wafer Fabrication market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do Gallium Nitride (GaN) Wafer Fabrication market opportunities vary by end market size?

How does Gallium Nitride (GaN) Wafer Fabrication break out by Technology, by Application?



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