Global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors Market Growth (Status and Outlook) 2023-2029

Global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors Market Growth (Status and Outlook) 2023-2029

The power semiconductor is the core of electronic device electrical energy conversion and circuit control. In essence, it uses the unidirectional conductivity of the semiconductor to realize the function of power switch and power conversion. Whether it is hydropower, nuclear power, thermal power or wind power, or even the chemical energy provided by various batteries, most of them cannot be directly used. More than 75% of the electrical energy applications require power conversion by power semiconductor devices before they can be used by equipment.
LPI (LP Information)' newest research report, the “Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors Industry Forecast” looks at past sales and reviews total world Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors sales in 2022, providing a comprehensive analysis by region and market sector of projected Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors sales for 2023 through 2029. With Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors industry.
This Insight Report provides a comprehensive analysis of the global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market.
This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors and breaks down the forecast by type, by application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors.
The global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market size is projected to grow from US$ 994.3 million in 2022 to US$ 8927.1 million in 2029; it is expected to grow at a CAGR of 36.8% from 2023 to 2029.
The major global manufacturers of gallium nitride and silicon carbide power semiconductors include Infineon, CREE (Wolfspeed), Roma Electronics, STMicroelectronics, ON Semiconductor, etc. Gallium nitride and silicon carbide power semiconductor manufacturers are mainly in Europe, America and Japan. Chinese manufacturers started late. Most domestic companies are in the early stage of research and development. The technology is relatively backward and the industry volume is small. There is a big gap with European, American and Japanese manufacturers.
This report presents a comprehensive overview, market shares, and growth opportunities of Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market by product type, application, key players and key regions and countries.
Market Segmentation:
Segmentation by type
Silicon Carbide Power Semiconductor
Gallium Nitride Power Semiconductor
Segmentation by application
Consumer Electronics
New Energy Grid Connection
Rail
Industrial Motor
Ups Power Supply
New Energy Vehicles
Other
This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries
The below companies that are profiled have been selected based on inputs gathered from primary experts and analyzing the company's coverage, product portfolio, its market penetration.
Infineon
CREE (Wolfspeed)
Roma Semiconductor Group
STMicroelectronics
ON Semiconductor
Mitsubishi Electric
Fuji Electric
Littelfuse
Tyco Tianrun Semiconductor Technology (Beijing) Co., Ltd.
Shenzhen Basic Semiconductor Co., Ltd.

Please note: The report will take approximately 2 business days to prepare and deliver.


*This is a tentative TOC and the final deliverable is subject to change.*
1 Scope of the Report
2 Executive Summary
3 Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors Market Size by Player
4 Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors by Regions
5 Americas
6 APAC
7 Europe
8 Middle East & Africa
9 Market Drivers, Challenges and Trends
10 Global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors Market Forecast
11 Key Players Analysis
12 Research Findings and Conclusion

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