Global Gallium Nitride Field-effect Transistors(GaN FETs) Market Growth 2023-2029

Global Gallium Nitride Field-effect Transistors(GaN FETs) Market Growth 2023-2029

The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current. FETs are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source.

LPI (LP Information)' newest research report, the “Gallium Nitride Field-effect Transistors(GaN FETs) Industry Forecast” looks at past sales and reviews total world Gallium Nitride Field-effect Transistors(GaN FETs) sales in 2022, providing a comprehensive analysis by region and market sector of projected Gallium Nitride Field-effect Transistors(GaN FETs) sales for 2023 through 2029. With Gallium Nitride Field-effect Transistors(GaN FETs) sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world Gallium Nitride Field-effect Transistors(GaN FETs) industry.

This Insight Report provides a comprehensive analysis of the global Gallium Nitride Field-effect Transistors(GaN FETs) landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on Gallium Nitride Field-effect Transistors(GaN FETs) portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms' unique position in an accelerating global Gallium Nitride Field-effect Transistors(GaN FETs) market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for Gallium Nitride Field-effect Transistors(GaN FETs) and breaks down the forecast by type, by application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global Gallium Nitride Field-effect Transistors(GaN FETs).

The global Gallium Nitride Field-effect Transistors(GaN FETs) market size is projected to grow from US$ million in 2022 to US$ million in 2029; it is expected to grow at a CAGR of % from 2023 to 2029.

United States market for Gallium Nitride Field-effect Transistors(GaN FETs) is estimated to increase from US$ million in 2022 to US$ million by 2029, at a CAGR of % from 2023 through 2029.

China market for Gallium Nitride Field-effect Transistors(GaN FETs) is estimated to increase from US$ million in 2022 to US$ million by 2029, at a CAGR of % from 2023 through 2029.

Europe market for Gallium Nitride Field-effect Transistors(GaN FETs) is estimated to increase from US$ million in 2022 to US$ million by 2029, at a CAGR of % from 2023 through 2029.

Global key Gallium Nitride Field-effect Transistors(GaN FETs) players cover Nexperia, Renesas Electronics, Infineon Technologies, Transphorm, Panasonic Electronic, GaN Systems, Efficient Power Conversion Corporation., San'an Optoelectronics and Solid State Devices, etc. In terms of revenue, the global two largest companies occupied for a share nearly % in 2022.

This report presents a comprehensive overview, market shares, and growth opportunities of Gallium Nitride Field-effect Transistors(GaN FETs) market by product type, application, key manufacturers and key regions and countries.

Market Segmentation:

Segmentation by type
Metal-Oxide-Semiconductor Field-Effect Transistor
Heterojunction Field Effect Transistor
Modulation Doped Field Effect Transistor

Segmentation by application
Consumer Electronics
Automobile Circuit
Communication Device
Industrial Appliances
Charging Equipment

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analyzing the company's coverage, product portfolio, its market penetration.
Nexperia
Renesas Electronics
Infineon Technologies
Transphorm
Panasonic Electronic
GaN Systems
Efficient Power Conversion Corporation.
San'an Optoelectronics
Solid State Devices
Texas Instruments
Qorvo
pSemi Corporation
Toshiba Infrastructure Systems & Solutions Corporation
Alpha and Omega Semiconductor
NTT Advanced Technology Corporation
Tektronix
ON Semiconductor
Advance Compound Semiconductors
ST Microelectronics
Wolfspeed

Key Questions Addressed in this Report

What is the 10-year outlook for the global Gallium Nitride Field-effect Transistors(GaN FETs) market?

What factors are driving Gallium Nitride Field-effect Transistors(GaN FETs) market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do Gallium Nitride Field-effect Transistors(GaN FETs) market opportunities vary by end market size?

How does Gallium Nitride Field-effect Transistors(GaN FETs) break out type, application?

What are the influences of COVID-19 and Russia-Ukraine war?

Please note: The report will take approximately 2 business days to prepare and deliver.