Global Gallium Arsenide High Electron Mobility Transistor Market Growth 2023-2029

Global Gallium Arsenide High Electron Mobility Transistor Market Growth 2023-2029

Gallium arsenide high electron mobility transistors are heterojunction field effect devices developed on the basis of gallium arsenide metal semiconductor field effect transistors. The device type is determined by factors such as the height of the Schottky barrier, the thickness of the barrier layer, and the doping concentration of the device. Under the zero-volt gate voltage of the enhanced device, the source-drain current is pinched off. As the gate voltage changes to the positive voltage, the source-drain current gradually increases; while for the depletion-type device, the source-drain current is turned on under the zero-volt gate voltage. As the gate voltage changes to a negative voltage, the source leakage current gradually decreases until it is cut off.
LPI (LP Information)' newest research report, the “Gallium Arsenide High Electron Mobility Transistor Industry Forecast” looks at past sales and reviews total world Gallium Arsenide High Electron Mobility Transistor sales in 2022, providing a comprehensive analysis by region and market sector of projected Gallium Arsenide High Electron Mobility Transistor sales for 2023 through 2029. With Gallium Arsenide High Electron Mobility Transistor sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world Gallium Arsenide High Electron Mobility Transistor industry.
This Insight Report provides a comprehensive analysis of the global Gallium Arsenide High Electron Mobility Transistor landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on Gallium Arsenide High Electron Mobility Transistor portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms' unique position in an accelerating global Gallium Arsenide High Electron Mobility Transistor market.
This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for Gallium Arsenide High Electron Mobility Transistor and breaks down the forecast by type, by application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global Gallium Arsenide High Electron Mobility Transistor.
The global Gallium Arsenide High Electron Mobility Transistor market size is projected to grow from US$ million in 2022 to US$ million in 2029; it is expected to grow at a CAGR of % from 2023 to 2029.
United States market for Gallium Arsenide High Electron Mobility Transistor is estimated to increase from US$ million in 2022 to US$ million by 2029, at a CAGR of % from 2023 through 2029.
China market for Gallium Arsenide High Electron Mobility Transistor is estimated to increase from US$ million in 2022 to US$ million by 2029, at a CAGR of % from 2023 through 2029.
Europe market for Gallium Arsenide High Electron Mobility Transistor is estimated to increase from US$ million in 2022 to US$ million by 2029, at a CAGR of % from 2023 through 2029.
Global key Gallium Arsenide High Electron Mobility Transistor players cover Nexperia, Qorvo, Microchip Technology, Broadcom, Analog Devices, Infineon Technologies, Sumitomo Electric Industries, WIN Semiconductors and Sanan Optoelectronics, etc. In terms of revenue, the global two largest companies occupied for a share nearly % in 2022.
This report presents a comprehensive overview, market shares, and growth opportunities of Gallium Arsenide High Electron Mobility Transistor market by product type, application, key manufacturers and key regions and countries.
Market Segmentation:
Segmentation by type
Enhanced
Depletion
Segmentation by application
Mobile Phone
Communication Microwave Devices
Communication Signal Switcher
Others
This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries
The below companies that are profiled have been selected based on inputs gathered from primary experts and analyzing the company's coverage, product portfolio, its market penetration.
Nexperia
Qorvo
Microchip Technology
Broadcom
Analog Devices
Infineon Technologies
Sumitomo Electric Industries
WIN Semiconductors
Sanan Optoelectronics
Sichuan Haite High-Tech
Key Questions Addressed in this Report
What is the 10-year outlook for the global Gallium Arsenide High Electron Mobility Transistor market?
What factors are driving Gallium Arsenide High Electron Mobility Transistor market growth, globally and by region?
Which technologies are poised for the fastest growth by market and region?
How do Gallium Arsenide High Electron Mobility Transistor market opportunities vary by end market size?
How does Gallium Arsenide High Electron Mobility Transistor break out type, application?
What are the influences of COVID-19 and Russia-Ukraine war?

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