Global Gallium Arsenide Market Growth 2023-2029
Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure.
Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows.
LPI (LP Information)' newest research report, the “Gallium Arsenide Industry Forecast” looks at past sales and reviews total world Gallium Arsenide sales in 2022, providing a comprehensive analysis by region and market sector of projected Gallium Arsenide sales for 2023 through 2029. With Gallium Arsenide sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world Gallium Arsenide industry.
This Insight Report provides a comprehensive analysis of the global Gallium Arsenide landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on Gallium Arsenide portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms' unique position in an accelerating global Gallium Arsenide market.
This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for Gallium Arsenide and breaks down the forecast by type, by application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global Gallium Arsenide.
The global Gallium Arsenide market size is projected to grow from US$ 283.7 million in 2022 to US$ 562.4 million in 2029; it is expected to grow at a CAGR of 562.4 from 2023 to 2029.
Global Gallium Arsenide key players include Freiberger Compound Materials, AXT, Sumitomo Electric, Vital Advanced Material, China Crystal Technologies, etc. Global top five players hold a share about 85%.
Asia-Pacific is the largest market, with a share about 65%, followed by North America and Europe, having a total share about 30 percent.
In terms of product, VGF Grown GaAs is the largest segment, with a share about 63%. And in terms of application, the largest application is RF, followed by LED, Photonics, Photovoltaic.
This report presents a comprehensive overview, market shares, and growth opportunities of Gallium Arsenide market by product type, application, key manufacturers and key regions and countries.
Market Segmentation:
Segmentation by type
LEC Grown GaAs
VGF Grown GaAs
Others
Segmentation by application
RF
LED
Photonics
Photovoltaic
This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries
The below companies that are profiled have been selected based on inputs gathered from primary experts and analyzing the company's coverage, product portfolio, its market penetration.
Freiberger Compound Materials
AXT
Sumitomo Electric
Vital Advanced Material
China Crystal Technologies
Jiachang Technology
Yunnan Germanium
DOWA Electronics Materials
Key Questions Addressed in this Report
What is the 10-year outlook for the global Gallium Arsenide market?
What factors are driving Gallium Arsenide market growth, globally and by region?
Which technologies are poised for the fastest growth by market and region?
How do Gallium Arsenide market opportunities vary by end market size?
How does Gallium Arsenide break out type, application?
What are the influences of COVID-19 and Russia-Ukraine war?
Please note: The report will take approximately 2 business days to prepare and deliver.
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