Global GaN Semiconductor Device Market Growth 2025-2031

The global GaN Semiconductor Device market size is predicted to grow from US$ 2294 million in 2025 to US$ 6222 million in 2031; it is expected to grow at a CAGR of 18.1% from 2025 to 2031.

This report studies the GaN Semiconductor Devices, include GaN RF devices and GaN power devices.

Currently GaN RF devices are currently in a dominant position, accounting for about 85% of the market share, while GaN power devices currently account for the remaining 15%. GaN power devices have grown rapidly in recent years, and a large number of companies have gradually entered the industry. It is expected that GaN power devices market share will further increase in the next few years.

At present, GaN RF devices are mainly dominated by several companies such as Sumitomo Electric Device Innovations (SEDI), Wolfspeed, Qorvo and NXP; while GaN power devices are dominated by Power Integrations, Inc., Navitas Semiconductor, GaN Systems, Efficient Power Conversion Corporation (EPC), Innoscience, Transphorm Inc. and Infineon, among which Innoscience is the world's largest GaN power device manufacturer.

GaN power devices have grown rapidly in recent years, and a large number of companies have gradually entered the industry. In the next few years, the main market demand for gallium nitride will come from the automotive. In the automotive, the entry point of GaN power devices is the on-board charger (OBC).

LP Information, Inc. (LPI) ' newest research report, the “GaN Semiconductor Device Industry Forecast” looks at past sales and reviews total world GaN Semiconductor Device sales in 2024, providing a comprehensive analysis by region and market sector of projected GaN Semiconductor Device sales for 2025 through 2031. With GaN Semiconductor Device sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world GaN Semiconductor Device industry.

This Insight Report provides a comprehensive analysis of the global GaN Semiconductor Device landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on GaN Semiconductor Device portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global GaN Semiconductor Device market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for GaN Semiconductor Device and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global GaN Semiconductor Device.

This report presents a comprehensive overview, market shares, and growth opportunities of GaN Semiconductor Device market by product type, application, key manufacturers and key regions and countries.

Segmentation by Type:
GaN RF Devices
GaN Power Devices

Segmentation by Application:
Telecom & Datacom
Consumer Electronics
Industrial
Automotive & Mobility
Military, Defense & Aerospace
Energy
Others

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the company's coverage, product portfolio, its market penetration.
Infineon (GaN Systems)
STMicroelectronics
Texas Instruments
onsemi
Microchip Technology
Rohm
NXP Semiconductors
Toshiba
Innoscience
Wolfspeed, Inc
Renesas Electronics (Transphorm)
Sumitomo Electric Device Innovations (SEDI) (SCIOCS)
Alpha and Omega Semiconductor Limited (AOS)
Nexperia
Epistar Corp.
Qorvo
Navitas Semiconductor
Power Integrations, Inc.
Efficient Power Conversion Corporation (EPC)
MACOM
VisIC Technologies
Cambridge GaN Devices (CGD)
Wise Integration
RFHIC Corporation
Ampleon
GaNext
Chengdu DanXi Technology
Southchip Semiconductor Technology
Panasonic
Toyoda Gosei
China Resources Microelectronics Limited
CorEnergy
Dynax Semiconductor
Sanan Optoelectronics
Hangzhou Silan Microelectronics
Guangdong ZIENER Technology
CETC 13
CETC 55
Qingdao Cohenius Microelectronics
Youjia Technology (Suzhou) Co., Ltd
Nanjing Xinkansen Technology
GaNPower
CloudSemi
Shenzhen Taigao Technology

Key Questions Addressed in this Report

What is the 10-year outlook for the global GaN Semiconductor Device market?

What factors are driving GaN Semiconductor Device market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do GaN Semiconductor Device market opportunities vary by end market size?

How does GaN Semiconductor Device break out by Type, by Application?

Please note: The report will take approximately 2 business days to prepare and deliver.