Global GaN Power IC Design Market Growth (Status and Outlook) 2024-2030

Global GaN Power IC Design Market Growth (Status and Outlook) 2024-2030

GaN, a wide bandgap semiconductor material featuring high-frequency and low on-resistance, has become the centerpiece in the ongoing revolution of the power semiconductor industry.

In semiconductor industry, there are two models: IDM model and Fabless model.

IDM model enables in-house control of the entire process from design, manufacturing to testing. With an integrated operational framework, the IDM model offers unmatched coordination and synergy while ensuring the quality of power semiconductor products. It provides stable production capacities, enables swift innovation through synergistic design and process iterations and supports cost-effective scaling.

While advanced process technologies significantly enhance digital chip performance, the functionality of analog chips — especially power semiconductor chips — largely hinges on the intrinsic properties of the semiconductor materials employed. Different materials have distinct bandgap, carrier mobility, electrical and thermal conductivity and other properties, resulting in varied performance and applications. As a result, the IDM model, which enables in-house control of the entire process from design, manufacturing to testing, has been the mainstream operational framework in the broader power semiconductor industry. The global top five power semiconductor companies all adopted the IDM model. In the rapidly evolving GaN power semiconductor industry, this model continues to prove to be the most effective.

This report studies the GaN power IC design, including the including IDM and fabless. The fabless business model still dominates the power GaN ecosystem in 2023, but some fabless companies are expected to be acquired by IDMs. The typical IDMs include Innoscience, Infineon (GaN Systems), Wolfspeed, STMicroelectronics, Renesas Electronics (Transphorm), Texas Instruments, Epistar Corp., China Resources Microelectronics Limited, CorEnergy, Dynax Semiconductor, Sanan Optoelectronics, Rohm, etc.

The global GaN Power IC Design market size is projected to grow from US$ 2196 million in 2024 to US$ 5318 million in 2030; it is expected to grow at a CAGR of 15.9% from 2024 to 2030.

LPI (LP Information)' newest research report, the “GaN Power IC Design Industry Forecast” looks at past sales and reviews total world GaN Power IC Design sales in 2022, providing a comprehensive analysis by region and market sector of projected GaN Power IC Design sales for 2023 through 2029. With GaN Power IC Design sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world GaN Power IC Design industry.

This Insight Report provides a comprehensive analysis of the global GaN Power IC Design landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyses the strategies of leading global companies with a focus on GaN Power IC Design portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global GaN Power IC Design market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for GaN Power IC Design and breaks down the forecast by Model, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global GaN Power IC Design.

United States market for GaN Power IC Design is estimated to increase from US$ million in 2023 to US$ million by 2030, at a CAGR of % from 2024 through 2030.

China market for GaN Power IC Design is estimated to increase from US$ million in 2023 to US$ million by 2030, at a CAGR of % from 2024 through 2030.

Europe market for GaN Power IC Design is estimated to increase from US$ million in 2023 to US$ million by 2030, at a CAGR of % from 2024 through 2030.

Global key GaN Power IC Design players cover Infineon (GaN Systems), STMicroelectronics, Texas Instruments, onsemi, Microchip Technology, etc. In terms of revenue, the global two largest companies occupied for a share nearly % in 2023.

This report presents a comprehensive overview, market shares, and growth opportunities of GaN Power IC Design market by product type, application, key players and key regions and countries.

Segmentation by Model:
Power GaN IDM
Power GaN Fabless

Segmentation by Application:
GaN Power Devices
GaN RF Devices

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

Segmentation by Model:
Power GaN IDM
Power GaN Fabless

Segmentation by Application:
GaN Power Devices
GaN RF Devices

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analyzing the company's coverage, product portfolio, its market penetration.
Infineon (GaN Systems)
STMicroelectronics
Texas Instruments
onsemi
Microchip Technology
Rohm
NXP Semiconductors
Toshiba
Innoscience
Wolfspeed, Inc
Renesas Electronics (Transphorm)
Sumitomo Electric Device Innovations (SEDI) (SCIOCS)
Alpha and Omega Semiconductor Limited (AOS)
Nexperia
Epistar Corp.
Qorvo
Navitas Semiconductor
Power Integrations, Inc.
Efficient Power Conversion Corporation (EPC)
MACOM
VisIC Technologies
Cambridge GaN Devices (CGD)
Wise Integration
RFHIC Corporation
Ampleon
GaNext
Chengdu DanXi Technology
Southchip Semiconductor Technology
Panasonic
Toyoda Gosei
China Resources Microelectronics Limited
CorEnergy
Dynax Semiconductor
Sanan Optoelectronics
Hangzhou Silan Microelectronics
Guangdong ZIENER Technology
Nuvoton Technology Corporation
CETC 13
CETC 55
Qingdao Cohenius Microelectronics
Youjia Technology (Suzhou) Co., Ltd
Nanjing Xinkansen Technology
GaNPower
CloudSemi
Shenzhen Taigao Technology

Please note: The report will take approximately 2 business days to prepare and deliver.