Global GaN Power Discrete Device Market Growth 2025-2031

Global GaN Power Discrete Device Market Growth 2025-2031

The global GaN Power Discrete Device market size is predicted to grow from US$ million in 2025 to US$ million in 2031; it is expected to grow at a CAGR of %from 2025 to 2031.

GaN power discrete devices have excellent physical characteristics such as low conduction loss and high current density, which can significantly reduce the power loss and cooling load of the communication system and greatly reduce the operating cost. It has been widely used in microwave integrated circuits, high voltage and high power fields. Gallium nitride high power semiconductor devices also began to be used in inverter, voltage regulator, transformer, wireless charging and other fields.

Gallium Nitride (GaN) power discrete devices are gaining traction in power electronics due to their high-performance characteristics. Market trends include the development of GaN-based solutions for applications like power supplies, automotive, and renewable energy.

LP Information, Inc. (LPI) ' newest research report, the “GaN Power Discrete Device Industry Forecast” looks at past sales and reviews total world GaN Power Discrete Device sales in 2024, providing a comprehensive analysis by region and market sector of projected GaN Power Discrete Device sales for 2025 through 2031. With GaN Power Discrete Device sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world GaN Power Discrete Device industry.

This Insight Report provides a comprehensive analysis of the global GaN Power Discrete Device landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on GaN Power Discrete Device portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global GaN Power Discrete Device market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for GaN Power Discrete Device and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global GaN Power Discrete Device.

This report presents a comprehensive overview, market shares, and growth opportunities of GaN Power Discrete Device market by product type, application, key manufacturers and key regions and countries.

Segmentation by Type:
Embedded Type
Ordinary Type

Segmentation by Application:
Consumer Electronics
IT & Telecommunications
Automotive
Aerospace & Defense
Others

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the company's coverage, product portfolio, its market penetration.
Efficient Power Conversion Corporation
NXP Semiconductors N.V.
GaN Systems Inc
Texas Instruments
Infineon Technologies AG
Fujitsu Limited
Transphorm Inc
Cree Incorporated
OSRAM Opto Semiconductors
Qorvo

Key Questions Addressed in this Report

What is the 10-year outlook for the global GaN Power Discrete Device market?

What factors are driving GaN Power Discrete Device market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do GaN Power Discrete Device market opportunities vary by end market size?

How does GaN Power Discrete Device break out by Type, by Application?

Please note: The report will take approximately 2 business days to prepare and deliver.