The global GaN Power Devices market size is predicted to grow from US$ million in 2025 to US$ million in 2031; it is expected to grow at a CAGR of %from 2025 to 2031.
GaN material has a critical field that is 10 times higher than silicon. With the same voltage ratings, a much lower on state resistance can be achieved.
The global GaN power device market for RF power device held the largest share in 2016. In 2016, more than 90% of the total GaN power device market for RF power devices was dominated by the telecommunications; military, defense, and aerospace; and consumer and enterprise verticals. RF power devices are used in the military applications, very small aperture terminal (VSAT), phased-array radar applications, defense applications, RF cellular infrastructure, jammers, and satellite communications. Initially developed for improvised explosive device (IED) jammers in Iraq, GaN RF power has emerged as the technology of choice for all new microwave and millimeter-wave electronics including radar, satellite, communications, and electronic warfare.
LP Information, Inc. (LPI) ' newest research report, the “GaN Power Devices Industry Forecast” looks at past sales and reviews total world GaN Power Devices sales in 2024, providing a comprehensive analysis by region and market sector of projected GaN Power Devices sales for 2025 through 2031. With GaN Power Devices sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world GaN Power Devices industry.
This Insight Report provides a comprehensive analysis of the global GaN Power Devices landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on GaN Power Devices portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global GaN Power Devices market.
This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for GaN Power Devices and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global GaN Power Devices.
This report presents a comprehensive overview, market shares, and growth opportunities of GaN Power Devices market by product type, application, key manufacturers and key regions and countries.
Segmentation by Type:
600V
Others
Segmentation by Application:
Server and Other IT Equipments
High-Efficiency and Stable Power Supplies
Rapidly Expanding HEV/EV Devices
This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries
The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the company's coverage, product portfolio, its market penetration.
Fujitsu
Toshiba
Koninklijke Philips
Texas Instruments
EPIGAN
NTT Advanced Technology
RF Micro Devices
Cree Incorporated
Aixtron
International Quantum Epitaxy (IQE)
Mitsubishi Chemical
AZZURO Semiconductors
Efficient Power Conversion (EPC)
GaN Systems
Infineon
Key Questions Addressed in this Report
What is the 10-year outlook for the global GaN Power Devices market?
What factors are driving GaN Power Devices market growth, globally and by region?
Which technologies are poised for the fastest growth by market and region?
How do GaN Power Devices market opportunities vary by end market size?
How does GaN Power Devices break out by Type, by Application?
Please note: The report will take approximately 2 business days to prepare and deliver.
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