Global GaN High Frequency Devices Market Growth 2025-2031

The global GaN High Frequency Devices market size is predicted to grow from US$ million in 2025 to US$ million in 2031; it is expected to grow at a CAGR of %from 2025 to 2031.

United States market for GaN High Frequency Devices is estimated to increase from US$ million in 2024 to US$ million by 2031, at a CAGR of % from 2025 through 2031.

China market for GaN High Frequency Devices is estimated to increase from US$ million in 2024 to US$ million by 2031, at a CAGR of % from 2025 through 2031.

Europe market for GaN High Frequency Devices is estimated to increase from US$ million in 2024 to US$ million by 2031, at a CAGR of % from 2025 through 2031.

Global key GaN High Frequency Devices players cover Infineon Technologies, Mitsubishi Electric, STMicroelectronics, ROHM, TI, etc. In terms of revenue, the global two largest companies occupied for a share nearly % in 2024.

LP Information, Inc. (LPI) ' newest research report, the “GaN High Frequency Devices Industry Forecast” looks at past sales and reviews total world GaN High Frequency Devices sales in 2024, providing a comprehensive analysis by region and market sector of projected GaN High Frequency Devices sales for 2025 through 2031. With GaN High Frequency Devices sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world GaN High Frequency Devices industry.

This Insight Report provides a comprehensive analysis of the global GaN High Frequency Devices landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on GaN High Frequency Devices portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global GaN High Frequency Devices market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for GaN High Frequency Devices and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global GaN High Frequency Devices.

This report presents a comprehensive overview, market shares, and growth opportunities of GaN High Frequency Devices market by product type, application, key manufacturers and key regions and countries.

Segmentation by Type:
LV High Frequency Devices
HV High Frequency Devices

Segmentation by Application:
Server
Power Supply
Electric Vehicle Equipment
Mobile Communications/Satellite Communications
Others

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the company's coverage, product portfolio, its market penetration.
Infineon Technologies
Mitsubishi Electric
STMicroelectronics
ROHM
TI
Toshiba
GaN Systems
Shindengen
Qorvo
Wolfspeed
Teledyne Defense Electronics
Fujitsu
NTT Advanced Technology
Koninklijke Philips

Key Questions Addressed in this Report

What is the 10-year outlook for the global GaN High Frequency Devices market?

What factors are driving GaN High Frequency Devices market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do GaN High Frequency Devices market opportunities vary by end market size?

How does GaN High Frequency Devices break out by Type, by Application?

Please note: The report will take approximately 2 business days to prepare and deliver.