Global GaN Discrete Devices Market Growth 2025-2031

The global GaN Discrete Devices market size is predicted to grow from US$ 364 million in 2025 to US$ 2544 million in 2031; it is expected to grow at a CAGR of 38.3% from 2025 to 2031.

Semiconductor discrete devices mainly refer to diodes, triodes and transistors. GaN discrete devices refer to those discrete gallium nitride semiconductor devices that work under high power conditions. These devices mainly include GaN HEMT/FET.

At present, gallium nitride technology has been widely used in chargers, adapters, photovoltaics/energy storage and other fields. And its application in the field of electric vehicles will gradually penetrate, such as OBC, DC-DC converters, etc.

In 2023, the global total sales of new energy vehicles reached 14.653 million, a simultaneous increase of 35.4%. Among them, China's new energy vehicle sales reached 9.495 million, accounting for 64.8% of global sales, and the production and sales of new energy vehicles have ranked first in the world for 8 consecutive years. The sales of new energy vehicles in the United States and Europe in 2023 were 2.948 million and 1.468 million respectively, with year-on-year growth rates of 18.3% and 48.0% respectively. With the rapid penetration of the electric vehicle market, the application prospects of gallium nitride discrete devices in the field of electric vehicles will become more and more broad.

The advantages and disadvantages compared with SiC discrete devices are mainly reflected in cost, market size, application scenarios, etc. For example, in terms of market size, according to our statistics, the market size of SiC power devices will be US$3.1 billion in 2023. However, in recent years, more and more companies at home and abroad are engaged in the gallium nitride industry. In the future, with the continuous advancement of technology and the continuous expansion of the market, gallium nitride discrete devices are expected to usher in a broader development prospect.

LP Information, Inc. (LPI) ' newest research report, the “GaN Discrete Devices Industry Forecast” looks at past sales and reviews total world GaN Discrete Devices sales in 2024, providing a comprehensive analysis by region and market sector of projected GaN Discrete Devices sales for 2025 through 2031. With GaN Discrete Devices sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world GaN Discrete Devices industry.

This Insight Report provides a comprehensive analysis of the global GaN Discrete Devices landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on GaN Discrete Devices portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global GaN Discrete Devices market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for GaN Discrete Devices and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global GaN Discrete Devices.

This report presents a comprehensive overview, market shares, and growth opportunities of GaN Discrete Devices market by product type, application, key manufacturers and key regions and countries.

Segmentation by Type:
LV Device
HV Device

Segmentation by Application:
Consumer Electronics
PV
Automotive
Industrial
Others

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the company's coverage, product portfolio, its market penetration.
Infineon
Texas Instruments
Microchip Technology
Mitsubishi Electric
Toshiba
STMicroelectronics
Wolfspeed
Sumitomo Electric
GaXtrem
Foshan NationStar Semiconductor
NXP Semiconductor
GaN Systems
GaNPower
Nexperia
CR Micro
Fujitsu
Qorvo
ROHM
Teledyne Defense Electronics
Innoscience
Transphorm
Cambridge GaN Devices
Navitas Semiconductor
Ampleon
PN Junction Semiconductor (Hangzhou)
Shanghai Cool Semiconductor
Chengdu Danxi Technology
GaNext
Efficient Power Conversion Corporation (EPC)

Key Questions Addressed in this Report

What is the 10-year outlook for the global GaN Discrete Devices market?

What factors are driving GaN Discrete Devices market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do GaN Discrete Devices market opportunities vary by end market size?

How does GaN Discrete Devices break out by Type, by Application?

Please note: The report will take approximately 2 business days to prepare and deliver.