Global GaN and AIN Materials Market Growth 2025-2031

Global GaN and AIN Materials Market Growth 2025-2031

The global GaN and AIN Materials market size is predicted to grow from US$ 327 million in 2025 to US$ 524 million in 2031; it is expected to grow at a CAGR of 8.2% from 2025 to 2031.

Gallium nitride (GaN) is an inorganic compound and a wide bandgap semiconductor material with a bandgap width of 3.4 electron volts (eV). Gallium nitride has excellent physical and chemical properties, such as high melting point, high hardness, high chemical stability, and good thermal conductivity and electrical conductivity. In semiconductor devices, gallium nitride can be used to manufacture high-efficiency, high-power microelectronic and optoelectronic devices.

Aluminum nitride (AIN) is a high-performance ceramic material with high thermal conductivity, high strength, high hardness, good chemical stability and electrical insulation. The crystal structure of aluminum nitride is hexagonal wurtzite type, with excellent thermal, mechanical and electrical properties.

Global key players of GaN and AIN Materials include Sumitomo Electric Industries, Ltd., Sumitomo Chemical, Mitsubishi Chemical, Kyma Technologies, HexaTech, etc. The top five players hold a share over 89%. Asia-Pacific is the largest market, has a share about 27%, followed by North America and Europe, with share 27% and 23%, separately. In terms of product type, Single Crystal GaN Substrate is the largest segment, occupied for a share of 95%, and in terms of application, RF Device has a share about 49 percent.

Market drivers

Technological progress and industrial upgrading:

With the continuous optimization of the preparation process and the reduction of costs, the performance of aluminum nitride materials has been continuously improved, and the application fields have been continuously expanded. For example, in the semiconductor industry, aluminum nitride, as a packaging substrate material, can effectively reduce the thermal resistance of the chip when it is working, and improve the reliability and life of the device; in high-frequency power devices, the high thermal conductivity and low thermal expansion coefficient of aluminum nitride make it an ideal heat dissipation material.

At the same time, aluminum nitride also has important applications in LED substrate materials, laser diode heat dissipation and other fields. With the rapid development of these fields, the demand for aluminum nitride materials continues to grow.

Market demand growth:

In the field of electronic components, aluminum nitride is widely used in optical devices and piezoelectric devices. For example, aluminum nitride substrates can be used as heat dissipation bases for optical devices to improve the stability and service life of optical devices; aluminum nitride piezoelectric devices have the characteristics of high sensitivity, low loss, and high temperature resistance, and have broad application prospects in aerospace, precision instruments and other fields.

In addition, in terms of industrial materials, the high hardness and wear resistance of aluminum nitride make it an ideal material for grinding and cutting tools; in the field of acoustic devices, aluminum nitride ultrasonic transducers have the advantages of high power, high efficiency, and small size, and are widely used in medical, industrial testing and other fields.

Policy support and industrial planning:

Governments of various countries have continuously increased their support for the new materials industry, providing a good policy environment for the research and development and production of aluminum nitride materials. For example, China regards the new materials industry as one of the national strategic emerging industries, and has introduced a series of policy measures to encourage enterprises to increase R&D investment and promote industrial upgrading and transformation.

At the same time, with the increasing demand for high-performance and high-reliability materials worldwide, the market demand for aluminum nitride materials has also shown a rapid growth trend.

In summary, gallium nitride and aluminum nitride materials have shown huge market potential and development prospects in their respective application fields. With the continuous advancement of technology and the continuous expansion of the market, the application fields of these two materials will be further expanded, providing strong support for the development of related industries.

LP Information, Inc. (LPI) ' newest research report, the “GaN and AIN Materials Industry Forecast” looks at past sales and reviews total world GaN and AIN Materials sales in 2024, providing a comprehensive analysis by region and market sector of projected GaN and AIN Materials sales for 2025 through 2031. With GaN and AIN Materials sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world GaN and AIN Materials industry.

This Insight Report provides a comprehensive analysis of the global GaN and AIN Materials landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on GaN and AIN Materials portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global GaN and AIN Materials market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for GaN and AIN Materials and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global GaN and AIN Materials.

This report presents a comprehensive overview, market shares, and growth opportunities of GaN and AIN Materials market by product type, application, key manufacturers and key regions and countries.

Segmentation by Type:
Single Crystal GaN Substrate
Single Crystal AIN Substrate

Segmentation by Application:
RF Device
Power Electronics
MicroLED
UV LED
High Brightness LED
GaN Laser

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the company's coverage, product portfolio, its market penetration.
Sumitomo Electric Industries, Ltd.
Sumitomo Chemical
Mitsubishi Chemical
Kyma Technologies
HexaTech
Sino NitrideSemiconductor
Suzhou Nanowin Science and Technology Co.,Ltd
Ultratrend Technologies Co., Ltd.

Key Questions Addressed in this Report

What is the 10-year outlook for the global GaN and AIN Materials market?

What factors are driving GaN and AIN Materials market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do GaN and AIN Materials market opportunities vary by end market size?

How does GaN and AIN Materials break out by Type, by Application?

Please note: The report will take approximately 2 business days to prepare and deliver.