Global FeRAM Market Growth 2025-2031

The global FeRAM market size is predicted to grow from US$ 1411 million in 2025 to US$ 2357 million in 2031; it is expected to grow at a CAGR of 8.9% from 2025 to 2031.

Ferroelectric random access memory (FeRAM) is a nonvolatile memory, in which data are stored using hysteretic P-E (polarization vs. electric field) characteristics in a ferroelectric film. Ferroelectric random access memories (FeRAMs) are widely used in IC (integrated circuits) cards and RF (radio frequency) tags. Their features are (1) nonvolatile data storage (The stored data do not disappear even if electricity is turned off.), (2) the lowest power consumption among various semi-conductor memories, and (3) the operation speed as fast as that of DRAMs (dynamic RAMs).

Global core lithium-ion battery conductive agent manufacturers include Fujitsu, Cypress and ROHM etc. The top 1 company hold a share about 57%. Japan is the largest market, with a share about 90%.

LP Information, Inc. (LPI) ' newest research report, the “FeRAM Industry Forecast” looks at past sales and reviews total world FeRAM sales in 2024, providing a comprehensive analysis by region and market sector of projected FeRAM sales for 2025 through 2031. With FeRAM sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world FeRAM industry.

This Insight Report provides a comprehensive analysis of the global FeRAM landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on FeRAM portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global FeRAM market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for FeRAM and breaks down the forecast by Memory Size, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global FeRAM.

This report presents a comprehensive overview, market shares, and growth opportunities of FeRAM market by product type, application, key manufacturers and key regions and countries.

Segmentation by Memory Size:
4K to128K
256K to 2M
Above 2M

Segmentation by Application:
Automotive
Test and Measurement Equipment
Industrial Automation
Medical
Telecommunication
Consumer Electronics
Others

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the company's coverage, product portfolio, its market penetration.
Fujitsu
Infineon
ROHM
Texas Instruments
Symetrix

Key Questions Addressed in this Report

What is the 10-year outlook for the global FeRAM market?

What factors are driving FeRAM market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do FeRAM market opportunities vary by end market size?

How does FeRAM break out by Memory Size, by Application?

Please note: The report will take approximately 2 business days to prepare and deliver.