Global Epitaxial Growth Equipment for SiC and GaN Market Growth 2025-2031

Global Epitaxial Growth Equipment for SiC and GaN Market Growth 2025-2031

The global Epitaxial Growth Equipment for SiC and GaN market size is predicted to grow from US$ 1147 million in 2025 to US$ 1768 million in 2031; it is expected to grow at a CAGR of 7.5% from 2025 to 2031.

Epitaxial growth or epitaxy refers to the deposition of a crystalline covering layer (epitaxial layer) on a crystalline substrate. Epitaxy is used to manufacture silicon ingots and deposit a suitable crystalline layer on the surface of the wafer. Epitaxy can be divided into homogeneous epitaxy and heterogeneous epitaxy. In order to meet the specific requirements of devices for parameters such as resistance in different application fields, the device can only be made after epitaxy that meets the conditions is carried out on the substrate. Therefore, the quality of epitaxy will affect the performance of the device. Second-generation and third-generation semiconductor materials such as gallium nitride (GaN) and silicon carbide (SiC) widely require epitaxy technology as support.

Epitaxial Growth Equipment for SiC and GaN plays an important role in semiconductor manufacturing through epitaxial growth technology. It can provide high-quality and highly controlled epitaxial layers for the manufacture of various semiconductor devices and functional materials.

The market for Epitaxial Growth Equipment used in silicon carbide (SiC) and gallium nitride (GaN) semiconductors is rapidly evolving, driven by demand across a variety of advanced applications. These include power devices, microLEDs, and laser diodes, which require precision epitaxial growth to meet performance standards. GaN materials dominate the epitaxy market after silicon substrates, particularly for traditional GaN-based LEDs. Meanwhile, SiC substrates are gaining traction in the power electronics sector due to their wide bandgap properties, offering high efficiency and robustness for high-voltage applications. Although SiC substrates remain costly, they are considered critical for cutting-edge MOSFET and diode technologies, reinforcing their role in shaping the epitaxy equipment market.

Globally, China leads the market for epitaxial growth equipment for SiC and GaN, accounting for approximately 40% of the total share. This dominance stems from China’s substantial investments in semiconductor manufacturing and a focus on developing domestic supply chains for critical materials and equipment.

Key players in this space include NuFlare Technology Inc., Tokyo Electron Limited, NAURA, and VEECO, collectively holding about 60% of the market share. These companies are at the forefront of innovation, providing advanced solutions to meet the increasing complexity and precision requirements of semiconductor applications. Competition in this market is fierce, driven by the high capital intensity and technological expertise required for equipment manufacturing.

Chemical Vapor Deposition (CVD) epitaxy equipment is the largest product segment, representing around 50% of the market. This popularity can be attributed to its versatility and ability to achieve high-quality epitaxial layers crucial for advanced semiconductor devices. In terms of application, SiC epitaxy accounts for approximately 60% of the market. SiC-based solutions are particularly favored in power electronics for their superior performance in high-voltage and high-temperature environments, making them indispensable for applications in electric vehicles, renewable energy, and industrial power systems. GaN epitaxy also remains a significant segment, driven by its widespread adoption in optoelectronic devices and emerging roles in RF and 5G technologies.

LP Information, Inc. (LPI) ' newest research report, the “Epitaxial Growth Equipment for SiC and GaN Industry Forecast” looks at past sales and reviews total world Epitaxial Growth Equipment for SiC and GaN sales in 2024, providing a comprehensive analysis by region and market sector of projected Epitaxial Growth Equipment for SiC and GaN sales for 2025 through 2031. With Epitaxial Growth Equipment for SiC and GaN sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world Epitaxial Growth Equipment for SiC and GaN industry.

This Insight Report provides a comprehensive analysis of the global Epitaxial Growth Equipment for SiC and GaN landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on Epitaxial Growth Equipment for SiC and GaN portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global Epitaxial Growth Equipment for SiC and GaN market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for Epitaxial Growth Equipment for SiC and GaN and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global Epitaxial Growth Equipment for SiC and GaN.

This report presents a comprehensive overview, market shares, and growth opportunities of Epitaxial Growth Equipment for SiC and GaN market by product type, application, key manufacturers and key regions and countries.

Segmentation by Type:
CVD
MOCVD
Others

Segmentation by Application:
SiC Epitaxy
GaN Epitaxy

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the company's coverage, product portfolio, its market penetration.
NuFlare Technology Inc.
Tokyo Electron Limited
NAURA
VEECO
Taiyo Nippon Sanso
Aixtron
Advanced Micro-Fabrication Equipment Inc. China (AMEC）
ASM International
Aixtron
Riber
CETC
Tang Optoelectronics Equipment
Technology Engine of Science
HERMES Epitek

Key Questions Addressed in this Report

What is the 10-year outlook for the global Epitaxial Growth Equipment for SiC and GaN market?

What factors are driving Epitaxial Growth Equipment for SiC and GaN market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do Epitaxial Growth Equipment for SiC and GaN market opportunities vary by end market size?

How does Epitaxial Growth Equipment for SiC and GaN break out by Type, by Application?

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