Global Discrete Power Device Market Growth 2025-2031

Global Discrete Power Device Market Growth 2025-2031

The global Discrete Power Device market size is predicted to grow from US$ 41190 million in 2025 to US$ 65210 million in 2031; it is expected to grow at a CAGR of 8.0% from 2025 to 2031.

Discrete power devices refer to electronic devices with individual functions and functions that cannot be disassembled. According to different chip structures and functions, they can be divided into diodes, triodes, bridge rectifiers, thyristors, etc., and can be divided from the perspective of power dissipation (or rated current) For small signal devices, power devices.

Discrete power devices are electronic devices based on semiconductor materials with fixed single characteristics and functions. The device is mainly composed of a chip, a lead/frame, and a plastic casing. The chip determines device functions, such as rectification, voltage stabilization, switching, protection, etc. The lead/frame realizes the connection between the chip and the external circuit and the heat export. Provide protection for the chip and internal structure, ensure the stable realization of its functions, and are highly related to core performance such as heat dissipation.

The key manufacturers of discrete power devices worldwide are Infineon, On Semiconductor, ST Microelectronics, Mitsubishi Electric (Vincotech), Nexperia, Vishay Intertechnology, Toshiba, Fuji Electric, Rohm, etc. The top three producers have a total market share of 35%, and the largest producer is Nexperia, with a 15% share. The global origins are mainly located in North America, Europe, China, Japan, Taiwan, etc. Among them, Europe is the largest production region with 30% of the market share. In terms of product categories, IGBT and MOSFET both have a high market share, with a total market share of 70%. In terms of its applications, the automotive is its number one application, with a market share of 35%; followed by industrial control and grid and energy industries.

LP Information, Inc. (LPI) ' newest research report, the “Discrete Power Device Industry Forecast” looks at past sales and reviews total world Discrete Power Device sales in 2024, providing a comprehensive analysis by region and market sector of projected Discrete Power Device sales for 2025 through 2031. With Discrete Power Device sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world Discrete Power Device industry.

This Insight Report provides a comprehensive analysis of the global Discrete Power Device landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on Discrete Power Device portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global Discrete Power Device market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for Discrete Power Device and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global Discrete Power Device.

This report presents a comprehensive overview, market shares, and growth opportunities of Discrete Power Device market by product type, application, key manufacturers and key regions and countries.

Segmentation by Type:
Diodes
IGBT
MOSFET
BJT
Thyristor

Segmentation by Application:
Industrial Control
Automotive
Consumer Electronics
Communication
Grid and Energy
Others

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the company's coverage, product portfolio, its market penetration.
Infineon
ON Semiconductor
ST Microelectronics
Mitsubishi Electric (Vincotech)
Nexperia
Vishay Intertechnology
Toshiba
Fuji Electric
Rohm
Renesas Electronics
Diodes Incorporated
Littelfuse (IXYS)
Alpha & Omega Semiconductor
SEMIKRON Danfoss
Hitachi Power Semiconductor Device
Microchip
Sanken Electric
Semtech
MagnaChip
Bosch
Texas Instruments
KEC Corporation
Cree (Wolfspeed)
PANJIT Group
Unisonic Technologies (UTC)
Niko Semiconductor
Hangzhou Silan Microelectronics
Yangzhou Yangjie Electronic Technology
China Resources Microelectronics Limited
Jilin Sino-Microelectronics
StarPower
NCEPOWER
Hangzhou Li-On Microelectronics Corporation
Jiangsu Jiejie Microelectronics
OmniVision Technologies
Suzhou Good-Ark Electronics
Zhuzhou CRRC Times Electric
WeEn Semiconductors
Changzhou Galaxy Century Microelectronics
MacMic Science & Technolog
BYD Semiconductor
Hubei TECH Semiconductors

Key Questions Addressed in this Report

What is the 10-year outlook for the global Discrete Power Device market?

What factors are driving Discrete Power Device market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do Discrete Power Device market opportunities vary by end market size?

How does Discrete Power Device break out by Type, by Application?

Please note: The report will take approximately 2 business days to prepare and deliver.