Global Automotive-grade SiC Devices (Discrete) Market Growth 2023-2029

Global Automotive-grade SiC Devices (Discrete) Market Growth 2023-2029

According to our LPI (LP Information) latest study, the global Automotive-grade SiC Devices (Discrete) market size was valued at US$ 110.5 million in 2022. With growing demand in downstream market, the Automotive-grade SiC Devices (Discrete) is forecast to a readjusted size of US$ 736.6 million by 2029 with a CAGR of 31.1% during review period.

The research report highlights the growth potential of the global Automotive-grade SiC Devices (Discrete) market. Automotive-grade SiC Devices (Discrete) are expected to show stable growth in the future market. However, product differentiation, reducing costs, and supply chain optimization remain crucial for the widespread adoption of Automotive-grade SiC Devices (Discrete). Market players need to invest in research and development, forge strategic partnerships, and align their offerings with evolving consumer preferences to capitalize on the immense opportunities presented by the Automotive-grade SiC Devices (Discrete) market.

This report studies the Automotive-grade SiC Devices (Discrete), key segments cover SiC MOSFET discrete, SiC Schottky Barrier Diodes discrete, SiC FETs, SiC JFETs etc., used in EV Main Inverter (Electric Traction), OBC and DC/DC.

The key players of SiC MOSFET modules are STMicroelectronics, Infineon, Wolfspeed, Rohm, Onsemi, BYD Semiconductor, Microchip (Microsemi), Mitsubishi Electric (Vincotech) and Semikron Danfoss, etc. The top three players hold a share over 70 percent. The key players of SiC MOSFET Discrete are STMicroelectronics, Infineon, Wolfspeed, Rohm, and CETC 55, etc. The top five players hold a share over 80 percent. The key players of SiC SBD are STMicroelectronics, Infineon, Wolfspeed, Rohm, onsemi, Microchip (Microsemi), and San'an Optoelectronics, etc. The top five players hold a share over 70 percent.

Key Features:

The report on Automotive-grade SiC Devices (Discrete) market reflects various aspects and provide valuable insights into the industry.

Market Size and Growth: The research report provide an overview of the current size and growth of the Automotive-grade SiC Devices (Discrete) market. It may include historical data, market segmentation by Type (e.g., SiC MOSFET Discrete, SiC Diode Discrete (SiC SBD)), and regional breakdowns.

Market Drivers and Challenges: The report can identify and analyse the factors driving the growth of the Automotive-grade SiC Devices (Discrete) market, such as government regulations, environmental concerns, technological advancements, and changing consumer preferences. It can also highlight the challenges faced by the industry, including infrastructure limitations, range anxiety, and high upfront costs.

Competitive Landscape: The research report provides analysis of the competitive landscape within the Automotive-grade SiC Devices (Discrete) market. It includes profiles of key players, their market share, strategies, and product offerings. The report can also highlight emerging players and their potential impact on the market.

Technological Developments: The research report can delve into the latest technological developments in the Automotive-grade SiC Devices (Discrete) industry. This include advancements in Automotive-grade SiC Devices (Discrete) technology, Automotive-grade SiC Devices (Discrete) new entrants, Automotive-grade SiC Devices (Discrete) new investment, and other innovations that are shaping the future of Automotive-grade SiC Devices (Discrete).

Downstream Procumbent Preference: The report can shed light on customer procumbent behaviour and adoption trends in the Automotive-grade SiC Devices (Discrete) market. It includes factors influencing customer ' purchasing decisions, preferences for Automotive-grade SiC Devices (Discrete) product.

Government Policies and Incentives: The research report analyse the impact of government policies and incentives on the Automotive-grade SiC Devices (Discrete) market. This may include an assessment of regulatory frameworks, subsidies, tax incentives, and other measures aimed at promoting Automotive-grade SiC Devices (Discrete) market. The report also evaluates the effectiveness of these policies in driving market growth.

Environmental Impact and Sustainability: The research report assess the environmental impact and sustainability aspects of the Automotive-grade SiC Devices (Discrete) market.

Market Forecasts and Future Outlook: Based on the analysis conducted, the research report provide market forecasts and outlook for the Automotive-grade SiC Devices (Discrete) industry. This includes projections of market size, growth rates, regional trends, and predictions on technological advancements and policy developments.

Recommendations and Opportunities: The report conclude with recommendations for industry stakeholders, policymakers, and investors. It highlights potential opportunities for market players to capitalize on emerging trends, overcome challenges, and contribute to the growth and development of the Automotive-grade SiC Devices (Discrete) market.

Market Segmentation:

Automotive-grade SiC Devices (Discrete) market is split by Type and by Application. For the period 2018-2029, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value.

Segmentation by type
SiC MOSFET Discrete
SiC Diode Discrete (SiC SBD)
Others (SiC JFETs & FETs)

Segmentation by application
Main Inverter (Electric Traction)
OBC
DC/DC Converter for EV/HEV

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analyzing the company's coverage, product portfolio, its market penetration.
STMicroelectronics
Infineon
Wolfspeed
Rohm
onsemi
BYD Semiconductor
Microchip (Microsemi)
Mitsubishi Electric (Vincotech)
Semikron Danfoss
Navitas (GeneSiC)
Toshiba
San'an Optoelectronics
CETC 55
BASiC Semiconductor
Bosch
Zhuzhou CRRC Times Electric
Guangdong AccoPower Semiconductor

Key Questions Addressed in this Report

What is the 10-year outlook for the global Automotive-grade SiC Devices (Discrete) market?

What factors are driving Automotive-grade SiC Devices (Discrete) market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do Automotive-grade SiC Devices (Discrete) market opportunities vary by end market size?

How does Automotive-grade SiC Devices (Discrete) break out type, application?

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