Global Automotive GaN Devices Market Growth 2025-2031

The global Automotive GaN Devices market size is predicted to grow from US$ 33.5 million in 2025 to US$ 4779 million in 2031; it is expected to grow at a CAGR of 128.6% from 2025 to 2031.

Automotive GaN Devices are a class of high-performance power devices designed specifically for automotive applications that take advantage of the wide-band gap properties of gallium nitride materials to achieve greater energy efficiency and smaller size. These devices play a key role in electric and hybrid vehicles, especially in areas such as on-board chargers, inverters, DC-DC converters, and advanced driver assistance systems (ADAS). The high frequency and high efficiency characteristics of on-board gallium nitride semiconductors help improve vehicle performance, reduce energy consumption, and drive the development of vehicles in a greener and smarter direction.

United States market for Automotive GaN Devices is estimated to increase from US$ million in 2024 to US$ million by 2031, at a CAGR of % from 2025 through 2031.

China market for Automotive GaN Devices is estimated to increase from US$ million in 2024 to US$ million by 2031, at a CAGR of % from 2025 through 2031.

Europe market for Automotive GaN Devices is estimated to increase from US$ million in 2024 to US$ million by 2031, at a CAGR of % from 2025 through 2031.

Global key Automotive GaN Devices players cover NXP Semiconductor, Infineon Technologies AG, Panasonic Automotive Systems Co., Ltd, Texas Instruments, Qorvo Inc, etc. In terms of revenue, the global two largest companies occupied for a share nearly % in 2024.

LP Information, Inc. (LPI) ' newest research report, the “Automotive GaN Devices Industry Forecast” looks at past sales and reviews total world Automotive GaN Devices sales in 2024, providing a comprehensive analysis by region and market sector of projected Automotive GaN Devices sales for 2025 through 2031. With Automotive GaN Devices sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world Automotive GaN Devices industry.

This Insight Report provides a comprehensive analysis of the global Automotive GaN Devices landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on Automotive GaN Devices portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global Automotive GaN Devices market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for Automotive GaN Devices and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global Automotive GaN Devices.

This report presents a comprehensive overview, market shares, and growth opportunities of Automotive GaN Devices market by product type, application, key manufacturers and key regions and countries.

Segmentation by Type:
Power Device
Radio-frequency Device

Segmentation by Application:
Car Charger
Inverter
Motor Drive
Others

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the company's coverage, product portfolio, its market penetration.
NXP Semiconductor
Infineon Technologies AG
Panasonic Automotive Systems Co., Ltd
Texas Instruments
Qorvo Inc
OSRAM Opto Semiconductors GmbH
ROHM Co., Ltd
Efficient Power Conversion Corporation
Renesas Electronics Corporation
Toshiba Corporation
MACOM Technology Solutions Holdings, Inc.
Nexperia
Soitec
INNOSECCO(Zhuhai)Technology Co., Ltd

Key Questions Addressed in this Report

What is the 10-year outlook for the global Automotive GaN Devices market?

What factors are driving Automotive GaN Devices market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do Automotive GaN Devices market opportunities vary by end market size?

How does Automotive GaN Devices break out by Type, by Application?

Please note: The report will take approximately 2 business days to prepare and deliver.