Global Automobile SiC and GaN Power Devices Market Growth 2025-2031

The global Automobile SiC and GaN Power Devices market size is predicted to grow from US$ 3367 million in 2025 to US$ 13860 million in 2031; it is expected to grow at a CAGR of 26.6% from 2025 to 2031.

SiC (silicon carbide) is a compound semiconductor composed of silicon and carbide. SiC provides a number of advantages over silicon, including 10x the breakdown electric field strength, 3x the band gap, and enabling a wider range of p- and n-type control required for device construction.

GaN power devices have grown rapidly in recent years, and a large number of companies have gradually entered the industry. It is expected that GaN power devices market share will further increase in the next few years.

This report studies the Automotive SiC Power Devices and GaN Power Devices.

SiC Power Devices are mainly used in Automotive Main Inverter, On-Board Chargers and DC/DC Converter. and the SiC power devices market was dominated by STMicroelectronics, Infineon, Wolfspeed, Rohm, Onsemi, BYD Semiconductor.

GaN power devices have grown rapidly in recent years, and a large number of companies have gradually entered the industry. GaN power devices are currently mainly used in consumer electronics, such as mobile phone fast charging, adapters, etc. In the automotive, the entry point of GaN power devices is the on-board charger (OBC). Currently, the GaN power devices are dominated by Innoscience, Infineon (GaN Systems), Power Integrations, Inc., Navitas Semiconductor, Efficient Power Conversion Corporation (EPC), and Renesas Electronics (Transphorm), among which Innoscience is the world's largest GaN power device manufacturer.

LP Information, Inc. (LPI) ' newest research report, the “Automobile SiC and GaN Power Devices Industry Forecast” looks at past sales and reviews total world Automobile SiC and GaN Power Devices sales in 2024, providing a comprehensive analysis by region and market sector of projected Automobile SiC and GaN Power Devices sales for 2025 through 2031. With Automobile SiC and GaN Power Devices sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world Automobile SiC and GaN Power Devices industry.

This Insight Report provides a comprehensive analysis of the global Automobile SiC and GaN Power Devices landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on Automobile SiC and GaN Power Devices portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global Automobile SiC and GaN Power Devices market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for Automobile SiC and GaN Power Devices and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global Automobile SiC and GaN Power Devices.

This report presents a comprehensive overview, market shares, and growth opportunities of Automobile SiC and GaN Power Devices market by product type, application, key manufacturers and key regions and countries.

Segmentation by Type:
SiC Power Devices
GaN Power Devices

Segmentation by Application:
Main Inverter
EV On-Board Chargers
DC/DC Converter
Others

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the company's coverage, product portfolio, its market penetration.
STMicroelectronics
Infineon (GaN Systems)
Wolfspeed
Rohm
onsemi
NXP
Innoscience
BYD Semiconductor
Microchip (Microsemi)
Mitsubishi Electric (Vincotech)
Semikron Danfoss
Fuji Electric
Toshiba
Bosch
San'an Optoelectronics
Littelfuse (IXYS)
CETC 55
WeEn Semiconductors
BASiC Semiconductor
SemiQ
Diodes Incorporated
SanRex
Alpha & Omega Semiconductor
United Nova Technology
KEC Corporation
PANJIT Group
Nexperia
Vishay Intertechnology
Zhuzhou CRRC Times Electric
China Resources Microelectronics Limited
StarPower
Yangzhou Yangjie Electronic Technology
Guangdong AccoPower Semiconductor
Changzhou Galaxy Century Microelectronics
Hangzhou Silan Microelectronics
Cissoid
SK powertech
InventChip Technology
Hebei Sinopack Electronic Technology
Oriental Semiconductor
Jilin Sino-Microelectronics
PN Junction Semiconductor (Hangzhou)

Key Questions Addressed in this Report

What is the 10-year outlook for the global Automobile SiC and GaN Power Devices market?

What factors are driving Automobile SiC and GaN Power Devices market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do Automobile SiC and GaN Power Devices market opportunities vary by end market size?

How does Automobile SiC and GaN Power Devices break out by Type, by Application?

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