North America Power Transistor Market Size, Share & Industry Trends Analysis Report By Type (Bipolar Junction Transistor, Field Effect Transistor and Heterojunction Bipolar Transistor), By Technology, By Vertical, By Country and Growth Forecast, 2023 - 20

North America Power Transistor Market Size, Share & Industry Trends Analysis Report By Type (Bipolar Junction Transistor, Field Effect Transistor and Heterojunction Bipolar Transistor), By Technology, By Vertical, By Country and Growth Forecast, 2023 - 2030

The North America Power Transistor Market would witness market growth of 4.9% CAGR during the forecast period (2023-2030). In the year 2019, the North America market's volume surged to 581.4 million units, showcasing a growth of 2.1% (2019-2022).

Power transistors are semiconductor devices with three terminals (collector, base, and emitter) that are employed in power supplies and power amplifiers to both switch and amplify electrical signals. It is suitable for appliances that utilize a lot of current and voltage. More power and load can be handled by power transistors than by other tiny transistors. Positive-negative-positive (PNP) or negative-positive-negative (NPN) polarity are both achievable with power transistors. There are numerous power characteristics and switching speeds for these solutions.

Power transistors have gained popularity due to their ability to enhance the switching and power efficiency of electronic devices. Additionally, the market is expanding due to the rising use of connected devices such as modems, routers, amplifiers, smartphones, and wearable technology. Throughout the forecast period, the market's growth is expected to be impacted by the growing demand for connected devices.

Additionally, it is projected that greater consumer awareness of the power transistor's advantages will spur demand for these devices. These advantages include switching capability, durability, and others. Additionally, the widespread use of electronic devices, their high rate of consumption, and the rise in their power efficiency are all expected to have a beneficial impact on the markets' expansion.

The number of semiconductor manufacturing and testing activities in Mexico is increasing. Major back-end chip activities are located in Mexico for a number of global corporations, and other companies are expanding their semiconductor engineering and design personnel there. Additionally, Mexico is working to develop ecosystems for the supply of semiconductors for the growing electric vehicle industry. Mexico is ideally situated to participate in this endeavor to rebalance the supply chain due to its proximity to the United States, robust industrial sector, young labor, and advantageous trade terms. As a result of all these elements, the region is expected to see rapid growth in the market in the upcoming years.

The US market dominated the North America Power Transistor Market by Country in 2022 and would continue to be a dominant market till 2030; thereby, achieving a market value of $4,146.7 million by 2030. The Canada market is experiencing a CAGR of 7.3% during (2023 - 2030). Additionally, The Mexico market would exhibit a CAGR of 6.4% during (2023 - 2030).

Based on Type, the market is segmented into Bipolar Junction Transistor, Field Effect Transistor and Heterojunction Bipolar Transistor. Based on Technology, the market is segmented into Low-voltage FETs, RF Microwave Power, High-Voltage FETs, and IGBT Transistor. Based on Vertical, the market is segmented into Manufacturing, Consumer Electronics, Automotive, IT & Telecommunication and Others. Based on countries, the market is segmented into U.S., Mexico, Canada, and Rest of North America.

The market research report covers the analysis of key stake holders of the market. Key companies profiled in the report include Texas Instruments, Inc., Infineon Technologies AG, NXP Semiconductors N.V., STMicroelectronics N.V., Microchip Technology Incorporated, Mitsubishi Electric Corporation, Renesas Electronics Corporation, Vishay Intertechnology, Inc., Rohm Co., Ltd. and Diodes Incorporated

Scope of the Study

Market Segments covered in the Report:

By Type (Volume, Million Units, USD Million, 2019-2030)

• Bipolar Junction Transistor
• Field Effect Transistor
• Heterojunction Bipolar Transistor

By Technology (Volume, Million Units, USD Million, 2019-2030)

• Low-voltage FETs
• RF Microwave Power
• High-Voltage FETs
• IGBT Transistor

By Vertical (Volume, Million Units, USD Million, 2019-2030)

• Manufacturing
• Consumer Electronics
• Automotive
• IT & Telecommunication
• Others

By Country (Volume, Million Units, USD Million, 2019-2030)

• US
• Canada
• Mexico
• Rest of North America

Companies Profiled

• Texas Instruments, Inc.
• Infineon Technologies AG
• NXP Semiconductors N.V.
• STMicroelectronics N.V.
• Microchip Technology Incorporated
• Mitsubishi Electric Corporation
• Renesas Electronics Corporation
• Vishay Intertechnology, Inc.
• Rohm Co., Ltd.
• Diodes Incorporated

Unique Offerings from KBV Research

• Exhaustive coverage
• Highest number of market tables and figures
• Subscription based model available
• Guaranteed best price
• Assured post sales research support with 10% customization free