North America Laser Diode Market Size, Share & Industry Trends Analysis Report By Wavelength (Infrared, Red, Blue & Green, Blue Violet and Ultraviolet), By Technology, By End Use, By Doping Material, By Country and Growth Forecast, 2022 – 2028

North America Laser Diode Market Size, Share & Industry Trends Analysis Report By Wavelength (Infrared, Red, Blue & Green, Blue Violet and Ultraviolet), By Technology, By End Use, By Doping Material, By Country and Growth Forecast, 2022 – 2028

The North America Laser Diode Market would witness market growth of 12.7% CAGR during the forecast period (2022-2028).

The carriers (holes and electrons) are pumped into the intrinsic section of the laser diode, which houses the active region, first from the N and then from the P regions. All contemporary lasers utilize the double-hetero-structure design, where the photons and the carriers are restricted to maximize their opportunities for light emission and recombination.

The original diode laser work was carried out on straightforward P-N diodes. A laser diode's objective, in contrast to a conventional diode, is to recombine all of the carriers in the region and generate light. Thus, direct band-gap semiconductors are used to create laser diodes. One of the crystal growth processes is used to produce the laser diode epitaxial structure, typically beginning with an N-doped substrate and progressing through the I-doped active layer, P-doped cladding, and contact layer.

Quantum wells are most frequently used in the active layer because they provide a reduced threshold current and greater efficiency. A laser diode produces coherent light with the same phase and frequency over the entire spectrum using a p-n junction. The laser diode uses a technique known as "Light Amplification by Stimulated Emission of Radiation," or LASER, to produce this coherent light.

Rising electric mobility throughout significant North American region is expected to boost laser diode demand. Major automotive OEMs are based in the region, which additionally benefits from a substantial infrastructure of support and the government's support for electric vehicles. In addition to these, the increasing propensity of young people for premium and luxury vehicles is predicted to present lucrative opportunities.

The US market dominated the North America Laser Diode Market by Country 2021, and would continue to be a dominant market till 2028; thereby, achieving a market value of $2,695.5 million by 2028.The Canada market is poise to grow at a CAGR of 15.3% during (2022 - 2028). Additionally, The Mexico market would witness a CAGR of 14.3% during (2022 - 2028).

Based on Wavelength, the market is segmented into Infrared, Red, Blue & Green, Blue Violet and Ultraviolet. Based on Technology, the market is segmented into Distributed Feedback, Separate Confinement Heterostructure, Double Hetero Structure, Quantum Well & Cascade and VCSEL & VECSEL. Based on End Use, the market is segmented into Consumer Electronics, Telecommunication, Industrial & Automotive, Medical & Healthcare and Others. Based on Doping Material, the market is segmented into Gallium Arsenide (GaAs), Gallium Aluminum Arsenide (GaAIAs), Gallium Nitride (GaN) & Indium Gallium Nitride (InGaN), Gallium Indium Arsenic Antimony (GaInAsSb), Aluminum Gallium Indium Phosphide (AIGaInP) and Others. Based on countries, the market is segmented into U.S., Mexico, Canada, and Rest of North America.

The market research report covers the analysis of key stake holders of the market. Key companies profiled in the report include II-VI Incorporated, IPG Photonics Corporation, Jenoptik AG, Lumentum Holding, Inc., MKS Instruments, Inc., ams-OSRAM AG, Rohm Semiconductors Co., Ltd., Sharp Corporation, Ushio, Inc., and Hamamatsu Photonics K.K.

Scope of the Study

Market Segments covered in the Report:

By Wavelength

• Infrared
• Red
• Blue & Green
• Blue Violet
• Ultraviolet

By Technology

• Distributed Feedback
• Separate Confinement Heterostructure
• Double Hetero Structure
• Quantum Well & Cascade
• VCSEL & VECSEL

By End Use

• Consumer Electronics
• Telecommunication
• Industrial & Automotive
• Medical & Healthcare
• Others

By Doping Material

• Gallium Arsenide (GaAs)
• Gallium Aluminum Arsenide (GaAIAs)
• Gallium Nitride (GaN) & Indium Gallium Nitride (InGaN)
• Gallium Indium Arsenic Antimony (GaInAsSb)
• Aluminum Gallium Indium Phosphide (AIGaInP)
• Others

By Country

• US
• Canada
• Mexico
• Rest of North America

Companies Profiled

• II-VI Incorporated
• IPG Photonics Corporation
• Jenoptik AG
• Lumentum Holding, Inc.
• MKS Instruments, Inc.
• ams-OSRAM AG
• Rohm Semiconductors Co., Ltd.
• Sharp Corporation
• Ushio, Inc.
• Hamamatsu Photonics K.K.

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