Global Insulated-Gate Bipolar Transistors (IGBTs) Market Size, Share & Trends Analysis Report By Power Rating (High Power, Medium Power and Low Power), By Type (IGBT Module and Discrete IGBT), By Application, By Regional Outlook and Forecast, 2023 - 2030
The Global Insulated-Gate Bipolar Transistors (IGBTs) Market size is expected to reach $14.2 billion by 2030, rising at a market growth of 6.3% CAGR during the forecast period. In the year 2022, the market attained a volume of 91,869.5 thousand units, experiencing a growth of 22.9% (2019-2022).
Many consumer electronics appliances, such as air conditioners, refrigerators, and washing machines, adopt inverter technology. Thus, the consumer electronics segment acquired $1,271.7 million revenue in 2022. IGBTs play a crucial role in inverter circuits, enabling variable speed operation and improving overall efficiency in these appliances.
IGBTs are fundamental in power converters and inverters, converting electrical energy from one form to another. In applications such as motor drives, renewable energy systems, and industrial equipment, power electronics utilizing IGBTs facilitate efficient energy conversion. These applications are crucial for various sectors, including telecommunications, data centers, and critical infrastructure, where reliable power is essential.
Additionally, the increased adoption of variable frequency drives (VFDs) is a significant driver for the market. VFDs, also known as adjustable frequency drives or inverters, utilize IGBTs for motor control and speed regulation in various applications. Hence, increased adoption of variable frequency drives is driving the growth of the market.
However, the production of high-quality IGBTs involves sophisticated manufacturing processes and the use of advanced materials. These processes and materials can contribute to elevated manufacturing costs, impacting the overall cost structure of IGBTs. Therefore, the high initial cost is impeding the growth of the market.
By Power Rating Analysis
Based on power rating, the market is categorized into high power, medium power, and low power. The medium power segment witnessed a remarkable 31.2% revenue share in the market in 2022. This makes them versatile for a range of applications.
By Type Analysis
On the basis of type, the market is segmented into discrete IGBT and IGBT module. In 2022, the discrete IGBT segment attained a noteworthy 31.3% revenue share in the market. Designers can select and integrate additional components based on specific application requirements.
By Application Analysis
Based on application, the market is divided into energy & power, consumer electronics, inverter & UPS, electric vehicle, industrial system, and others. In 2022, the industrial system segment held a considerable 25% revenue share in the market. They facilitate the efficient charging and discharging of energy and enabling the storage of excess energy during low-demand periods.
By Regional Analysis
Region-wise, the market is analyzed across North America, Europe, Asia Pacific, and LAMEA. In 2022, the Asia Pacific region generated 45.2% revenue share in the market. IGBTs are essential components in inverters that convert renewable energy sources into usable electrical power for the grid.
Recent Strategies Deployed in the Market
- Nov-2023: Infineon Technologies AG took over GaN Systems, a company specializing in developing and manufacturing gallium nitride (GaN) power semiconductors for efficient and high-performance electronic systems. Through this acquisition, Infineon would strengthen its foothold in various rapidly expanding markets such as automotive, motor control, and green industrial power, consolidating its position in power components.
- Mar-2023: Toshiba Corporation introduced GT30J65MRB, a high-voltage 650V discrete insulated gate bipolar transistor (IGBT). The new IGBT incorporates an integrated diode with a forward voltage of 1.20V (typ.), approximately 43% lower than that of the GT50JR22, enhancing overall equipment efficiency.
- May-2020: Toshiba Corporation launched GT20N135SRA IGBT, a 1350V insulated gate bipolar transistor (IGBT) optimized for high-power applications. The GT20N135SRA IGBT boasts a collector-emitter saturation voltage (VCE(sat)) of 1.60 V (typ.) and a diode forward voltage (VF) of 1.75 V, marking reductions of about 10% and 21% respectively versus conventional models, increases operational efficiency.
- Jan-2023: Renesas Electronics Corporation launched RAJ2930004AGM, a novel gate driver IC tailored for high-voltage power components like IGBTs (Insulated Gate Bipolar Transistors) and SiC (Silicon Carbide) MOSFETs in electric vehicle (EV) inverters. The RAJ2930004AGM suits various applications like on-board chargers and DC/DC converters utilizing power semiconductors.
List of Key Companies Profiled
- Infineon Technologies AG
- Toshiba Corporation
- STMicroelectronics N.V.
- NXP Semiconductors N.V.
- ABB Group
- Fuji Electric Co. Ltd.
- Mitsubishi Electric Corporation
- Renesas Electronics Corporation
- Rohm Co., Ltd.
- Vishay Intertechnology, Inc.
Global Insulated-Gate Bipolar Transistors (IGBTs) Market Report Segmentation
By Power Rating (Volume, Thousand Units, USD Billion, 2019-2030)
- High Power
- Medium Power
- Low Power
By Type (Volume, Thousand Units, USD Billion, 2019-2030)
By Application (Volume, Thousand Units, USD Billion, 2019-2030)
- Energy & Power
- Inverter & UPS
- Electric Vehicle
- Industrial System
- Consumer Electronics
- Others
By Geography (Volume, Thousand Units, USD Billion, 2019-2030)
- North America
- US
- Canada
- Mexico
- Rest of North America
- Europe
- Germany
- UK
- France
- Russia
- Spain
- Italy
- Rest of Europe
- Asia Pacific
- China
- Japan
- India
- South Korea
- Singapore
- Malaysia
- Rest of Asia Pacific
- LAMEA
- Brazil
- Argentina
- UAE
- Saudi Arabia
- South Africa
- Nigeria
- Rest of LAMEA