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Global High Electron Mobility Transistor Market Size, Share & Industry Trends Analysis Report By Type (Gallium Nitride (GaN), Silicon Carbide (SiC), Gallium Arsenide (GaAs), and Others), By End-Use, By Regional Outlook and Forecast, 2023 - 2030

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from $3,600 353 Pages Knowledge Based Value (KBV) Research December, 2023 KBV18389048
Best Price Guarantee
Price from $3,600
Length 353 Pages
Publisher Knowledge Based Value (KBV) Research
Published Date December, 2023
SKU KBV18389048

Global High Electron Mobility Transistor Market Size, Share & Industry Trends Analysis Report By Type (Gallium Nitride (GaN), Silicon Carbide (SiC), Gallium Arsenide (GaAs), and Others), By End-Use, By Regional Outlook and Forecast, 2023 - 2030


The Global High Electron Mobility Transistor Market size is expected to reach $9.4 billion by 2030, rising at a market growth of 7.3% CAGR during the forecast period.

Consumer electronics, such as smartphones and tablets, demand high-speed data communication capabilities for internet browsing, video streaming, and online gaming. Therefore, the Consumer Electronics segment acquired $1,599.2 million in 2022. HEMTs are well-suited for high-frequency applications, making them crucial components in constructing high-speed transceivers and signal processing units that enable rapid data communication. The proliferation of wireless technologies in consumer electronics, including Wi-Fi, Bluetooth, and others, requires components that can operate at high frequencies. HEMTs are utilized in designing power amplifiers and transceivers for wireless communication, which contributes to developing efficient and reliable connectivity devices. Some of the factors impacting the market are proliferation of wireless and 5G technologies, growing implementation in radar and satellite communication, and manufacturing complexities related to HEMT.

5G networks operate at higher frequencies compared to previous generations. HEMTs are well-suited for high-frequency applications, making them essential for constructing components operating in the millimeter-wave and microwave frequency bands used in 5G communication. Power amplifiers in 5G base stations are crucial for transmitting signals over longer distances and through obstacles. HEMTs, with their high-power capabilities, are employed in these amplifiers to ensure efficient and reliable signal transmission. Additionally, Radar and satellite communication systems often operate in the microwave and millimeter-wave frequency bands. Radar and satellite communication systems require high-speed signal processing to analyze and interpret incoming data. HEMTs, with their high-speed capabilities, can be used in constructing transceivers and signal processing components, contributing to these systems' overall speed and efficiency. This is particularly important for satellite communication systems, where components are needed to withstand the harsh conditions of space. HEMTs are crucial components in constructing these antennas, enabling the rapid and accurate adjustments required for beamforming, leading to enhanced system capabilities. These factors will pose lucrative growth prospects for the market.

However, HEMTs often utilize compound semiconductors, such as Gallium Nitride (GaN) or Indium Phosphide (InP), with critical material properties for their performance. The manufacturing processes for these materials can be more intricate than traditional silicon-based processes, contributing to increased complexity. HEMTs require epitaxial growth of semiconductor layers, a process where single crystal layers are deposited on a crystal substrate. Achieving the desired material quality and thickness with precision is crucial for HEMT performance but involves sophisticated equipment and control, adding to manufacturing complexity. Achieving low contact resistance and uniformity across the device can be challenging, requiring sophisticated deposition and patterning techniques. These factors will hamper the growth of the market in the upcoming years.

Type Outlook

Based on type, the market is segmented into gallium nitride (GaN), silicon carbide (SiC), gallium arsenide (GaAs), and others. In 2022, the gallium arsenide (GaAs) segment garnered a significant revenue share in the market. GaAs HEMTs are known for their excellent high-frequency performance. This makes them ideal for applications in the GHz and terahertz ranges, such as in high-frequency communication systems and radar. Demand for high-frequency and high-speed electronic components has increased with the proliferation of mobile devices and the need for faster data transfer rates. GaAs HEMTs, with their high electron mobility, are well-suited for these applications. Therefore, the segment will expand rapidly in the coming years.

End-Use Outlook

On the basis of end-use, the market is divided into consumer electronics, automotive, industrial, aerospace & defense, and others. In 2022, the aerospace and defense segment witnessed a substantial revenue share in the market. Radar systems make extensive use of HEMTs on account of their capability to function at high frequencies. The aerospace and defense sector heavily relies on radar technology for surveillance, target tracking, and threat detection. The demand for advanced radar systems has driven the adoption of HEMTs, which provide the high-frequency performance required for radar applications. The aerospace and defense industry relies on sophisticated communication systems for secure and efficient information exchange. HEMTs play a crucial role in developing high-frequency communication devices essential for military applications. These factors will help in the expansion of the segment.

Regional Outlook

By region, the market is segmented into North America, Europe, Asia Pacific, and LAMEA. The Asia Pacific segment procured the highest revenue share in the market in 2022. The Asia Pacific region, particularly countries like China, Japan, South Korea, and Taiwan, is a hub for semiconductor manufacturing. The semiconductor industry's growth in these countries has positively influenced the market, as these transistors are essential components in advanced semiconductor devices. Major consumers of mobile devices and communication devices tend to be in the Asia-Pacific region. HEMTs are commonly used in the RF amplifiers of these devices, making them crucial for the region's expanding mobile and telecommunications industry. These factors will boost the demand in the segment in the coming years.

The market research report covers the analysis of key stake holders of the market. Key companies profiled in the report include Qorvo, Inc., Infineon Technologies AG, MACOM Technology Solutions Holdings, Inc., WOLFSPEED, INC., Texas Instruments, Inc., Sumitomo Electric Industries, Ltd., Analog Devices, Inc., Intel Corporation, NXP Semiconductors N.V., Mitsubishi Electric Corporation

Scope of the Study

Market Segments covered in the Report:

By Type
  • Gallium Nitride (GaN)
  • Silicon Carbide (SiC)
  • Gallium Arsenide (GaAs)
  • Others
By End-Use
  • Consumer Electronics
  • Automotive
  • Industrial
  • Aerospace & Defense
  • Others
By Geography
  • North America
  • US
  • Canada
  • Mexico
  • Rest of North America
  • Europe
  • Germany
  • UK
  • France
  • Russia
  • Spain
  • Italy
  • Rest of Europe
  • Asia Pacific
  • China
  • Japan
  • India
  • South Korea
  • Taiwan
  • Malaysia
  • Rest of Asia Pacific
  • LAMEA
  • Brazil
  • Argentina
  • UAE
  • Saudi Arabia
  • South Africa
  • Nigeria
  • Rest of LAMEA
Companies Profiled
  • Qorvo, Inc.
  • Infineon Technologies AG
  • MACOM Technology Solutions Holdings, Inc.
  • WOLFSPEED, INC.
  • Texas Instruments, Inc.
  • Sumitomo Electric Industries, Ltd.
  • Analog Devices, Inc.
  • Intel Corporation
  • NXP Semiconductors N.V.
  • Mitsubishi Electric Corporation
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Chapter 1. Market Scope & Methodology
1.1 Market Definition
1.2 Objectives
1.3 Market Scope
1.4 Segmentation
1.4.1 Global High Electron Mobility Transistor Market, by Type
1.4.2 Global High Electron Mobility Transistor Market, by End-Use
1.4.3 Global High Electron Mobility Transistor Market, by Geography
1.5 Methodology for the research
Chapter 2. Market At a Glance
2.1 Key Highlights
Chapter 3. Market Overview
3.1 Introduction
3.1.1 Overview
3.1.1.1 Market Composition and Scenario
3.2 Key Factors Impacting the Market
3.2.1 Market Drivers
3.2.2 Market Restraints
3.3 Porter Five Forces Analysis
Chapter 4. Global High Electron Mobility Transistor Market, by Type
4.1 Global Gallium Nitride (GaN) Market, by Region
4.2 Global Silicon Carbide (SiC) Market, by Region
4.3 Global Gallium Arsenide (GaAs) Market, by Region
4.4 Global Others Market, by Region
Chapter 5. Global High Electron Mobility Transistor Market, by End-Use
5.1 Global Consumer Electronics Market, by Region
5.2 Global Automotive Market, by Region
5.3 Global Industrial Market, by Region
5.4 Global Aerospace & Defense Market, by Region
5.5 Global Others Market, by Region
Chapter 6. Global High Electron Mobility Transistor Market, by Region
6.1 North America High Electron Mobility Transistor Market
6.1.1 North America High Electron Mobility Transistor Market, by Type
6.1.1.1 North America Gallium Nitride (GaN) Market, by Country
6.1.1.2 North America Silicon Carbide (SiC) Market, by Country
6.1.1.3 North America Gallium Arsenide (GaAs) Market, by Country
6.1.1.4 North America Others Market, by Country
6.1.2 North America High Electron Mobility Transistor Market, by End-Use
6.1.2.1 North America Consumer Electronics Market, by Country
6.1.2.2 North America Automotive Market, by Country
6.1.2.3 North America Industrial Market, by Country
6.1.2.4 North America Aerospace & Defense Market, by Country
6.1.2.5 North America Others Market, by Country
6.1.3 North America High Electron Mobility Transistor Market, by Country
6.1.3.1 US High Electron Mobility Transistor Market
6.1.3.1.1 US High Electron Mobility Transistor Market, by Type
6.1.3.1.2 US High Electron Mobility Transistor Market, by End-Use
6.1.3.2 Canada High Electron Mobility Transistor Market
6.1.3.2.1 Canada High Electron Mobility Transistor Market, by Type
6.1.3.2.2 Canada High Electron Mobility Transistor Market, by End-Use
6.1.3.3 Mexico High Electron Mobility Transistor Market
6.1.3.3.1 Mexico High Electron Mobility Transistor Market, by Type
6.1.3.3.2 Mexico High Electron Mobility Transistor Market, by End-Use
6.1.3.4 Rest of North America High Electron Mobility Transistor Market
6.1.3.4.1 Rest of North America High Electron Mobility Transistor Market, by Type
6.1.3.4.2 Rest of North America High Electron Mobility Transistor Market, by End-Use
6.2 Europe High Electron Mobility Transistor Market
6.2.1 Europe High Electron Mobility Transistor Market, by Type
6.2.1.1 Europe Gallium Nitride (GaN) Market, by Country
6.2.1.2 Europe Silicon Carbide (SiC) Market, by Country
6.2.1.3 Europe Gallium Arsenide (GaAs) Market, by Country
6.2.1.4 Europe Others Market, by Country
6.2.2 Europe High Electron Mobility Transistor Market, by End-Use
6.2.2.1 Europe Consumer Electronics Market, by Country
6.2.2.2 Europe Automotive Market, by Country
6.2.2.3 Europe Industrial Market, by Country
6.2.2.4 Europe Aerospace & Defense Market, by Country
6.2.2.5 Europe Others Market, by Country
6.2.3 Europe High Electron Mobility Transistor Market, by Country
6.2.3.1 Germany High Electron Mobility Transistor Market
6.2.3.1.1 Germany High Electron Mobility Transistor Market, by Type
6.2.3.1.2 Germany High Electron Mobility Transistor Market, by End-Use
6.2.3.2 UK High Electron Mobility Transistor Market
6.2.3.2.1 UK High Electron Mobility Transistor Market, by Type
6.2.3.2.2 UK High Electron Mobility Transistor Market, by End-Use
6.2.3.3 France High Electron Mobility Transistor Market
6.2.3.3.1 France High Electron Mobility Transistor Market, by Type
6.2.3.3.2 France High Electron Mobility Transistor Market, by End-Use
6.2.3.4 Russia High Electron Mobility Transistor Market
6.2.3.4.1 Russia High Electron Mobility Transistor Market, by Type
6.2.3.4.2 Russia High Electron Mobility Transistor Market, by End-Use
6.2.3.5 Spain High Electron Mobility Transistor Market
6.2.3.5.1 Spain High Electron Mobility Transistor Market, by Type
6.2.3.5.2 Spain High Electron Mobility Transistor Market, by End-Use
6.2.3.6 Italy High Electron Mobility Transistor Market
6.2.3.6.1 Italy High Electron Mobility Transistor Market, by Type
6.2.3.6.2 Italy High Electron Mobility Transistor Market, by End-Use
6.2.3.7 Rest of Europe High Electron Mobility Transistor Market
6.2.3.7.1 Rest of Europe High Electron Mobility Transistor Market, by Type
6.2.3.7.2 Rest of Europe High Electron Mobility Transistor Market, by End-Use
6.3 Asia Pacific High Electron Mobility Transistor Market
6.3.1 Asia Pacific High Electron Mobility Transistor Market, by Type
6.3.1.1 Asia Pacific Gallium Nitride (GaN) Market, by Country
6.3.1.2 Asia Pacific Silicon Carbide (SiC) Market, by Country
6.3.1.3 Asia Pacific Gallium Arsenide (GaAs) Market, by Country
6.3.1.4 Asia Pacific Others Market, by Country
6.3.2 Asia Pacific High Electron Mobility Transistor Market, by End-Use
6.3.2.1 Asia Pacific Consumer Electronics Market, by Country
6.3.2.2 Asia Pacific Automotive Market, by Country
6.3.2.3 Asia Pacific Industrial Market, by Country
6.3.2.4 Asia Pacific Aerospace & Defense Market, by Country
6.3.2.5 Asia Pacific Others Market, by Country
6.3.3 Asia Pacific High Electron Mobility Transistor Market, by Country
6.3.3.1 China High Electron Mobility Transistor Market
6.3.3.1.1 China High Electron Mobility Transistor Market, by Type
6.3.3.1.2 China High Electron Mobility Transistor Market, by End-Use
6.3.3.2 Japan High Electron Mobility Transistor Market
6.3.3.2.1 Japan High Electron Mobility Transistor Market, by Type
6.3.3.2.2 Japan High Electron Mobility Transistor Market, by End-Use
6.3.3.3 India High Electron Mobility Transistor Market
6.3.3.3.1 India High Electron Mobility Transistor Market, by Type
6.3.3.3.2 India High Electron Mobility Transistor Market, by End-Use
6.3.3.4 South Korea High Electron Mobility Transistor Market
6.3.3.4.1 South Korea High Electron Mobility Transistor Market, by Type
6.3.3.4.2 South Korea High Electron Mobility Transistor Market, by End-Use
6.3.3.5 Taiwan High Electron Mobility Transistor Market
6.3.3.5.1 Taiwan High Electron Mobility Transistor Market, by Type
6.3.3.5.2 Taiwan High Electron Mobility Transistor Market, by End-Use
6.3.3.6 Malaysia High Electron Mobility Transistor Market
6.3.3.6.1 Malaysia High Electron Mobility Transistor Market, by Type
6.3.3.6.2 Malaysia High Electron Mobility Transistor Market, by End-Use
6.3.3.7 Rest of Asia Pacific High Electron Mobility Transistor Market
6.3.3.7.1 Rest of Asia Pacific High Electron Mobility Transistor Market, by Type
6.3.3.7.2 Rest of Asia Pacific High Electron Mobility Transistor Market, by End-Use
6.4 LAMEA High Electron Mobility Transistor Market
6.4.1 LAMEA High Electron Mobility Transistor Market, by Type
6.4.1.1 LAMEA Gallium Nitride (GaN) Market, by Country
6.4.1.2 LAMEA Silicon Carbide (SiC) Market, by Country
6.4.1.3 LAMEA Gallium Arsenide (GaAs) Market, by Country
6.4.1.4 LAMEA Others Market, by Country
6.4.2 LAMEA High Electron Mobility Transistor Market, by End-Use
6.4.2.1 LAMEA Consumer Electronics Market, by Country
6.4.2.2 LAMEA Automotive Market, by Country
6.4.2.3 LAMEA Industrial Market, by Country
6.4.2.4 LAMEA Aerospace & Defense Market, by Country
6.4.2.5 LAMEA Others Market, by Country
6.4.3 LAMEA High Electron Mobility Transistor Market, by Country
6.4.3.1 Brazil High Electron Mobility Transistor Market
6.4.3.1.1 Brazil High Electron Mobility Transistor Market, by Type
6.4.3.1.2 Brazil High Electron Mobility Transistor Market, by End-Use
6.4.3.2 Argentina High Electron Mobility Transistor Market
6.4.3.2.1 Argentina High Electron Mobility Transistor Market, by Type
6.4.3.2.2 Argentina High Electron Mobility Transistor Market, by End-Use
6.4.3.3 UAE High Electron Mobility Transistor Market
6.4.3.3.1 UAE High Electron Mobility Transistor Market, by Type
6.4.3.3.2 UAE High Electron Mobility Transistor Market, by End-Use
6.4.3.4 Saudi Arabia High Electron Mobility Transistor Market
6.4.3.4.1 Saudi Arabia High Electron Mobility Transistor Market, by Type
6.4.3.4.2 Saudi Arabia High Electron Mobility Transistor Market, by End-Use
6.4.3.5 South Africa High Electron Mobility Transistor Market
6.4.3.5.1 South Africa High Electron Mobility Transistor Market, by Type
6.4.3.5.2 South Africa High Electron Mobility Transistor Market, by End-Use
6.4.3.6 Nigeria High Electron Mobility Transistor Market
6.4.3.6.1 Nigeria High Electron Mobility Transistor Market, by Type
6.4.3.6.2 Nigeria High Electron Mobility Transistor Market, by End-Use
6.4.3.7 Rest of LAMEA High Electron Mobility Transistor Market
6.4.3.7.1 Rest of LAMEA High Electron Mobility Transistor Market, by Type
6.4.3.7.2 Rest of LAMEA High Electron Mobility Transistor Market, by End-Use
Chapter 7. Company Profiles
7.1 Qorvo, Inc.
7.1.1 Company Overview
7.1.2 Financial Analysis
7.1.3 Segmental and Regional Analysis
7.1.4 Research & Development Expenses
7.1.5 SWOT Analysis
7.2 Infineon Technologies AG
7.2.1 Company Overview
7.2.2 Financial Analysis
7.2.3 Segmental and Regional Analysis
7.2.4 Research & Development Expense
7.2.5 Recent strategies and developments:
7.2.5.1 Partnerships, Collaborations, and Agreements:
7.2.5.2 Product Launches and Product Expansions:
7.2.5.3 Acquisition and Mergers:
7.2.6 SWOT Analysis
7.3 MACOM Technology Solutions Holdings, Inc.
7.3.1 Company Overview
7.3.2 Financial Analysis
7.3.3 Regional Analysis
7.3.4 Research & Development Expenses
7.3.5 SWOT Analysis
7.4 WOLFSPEED, INC.
7.4.1 Company Overview
7.4.2 Financial Analysis
7.4.3 Regional Analysis
7.4.4 SWOT Analysis
7.5 Texas Instruments, Inc.
7.5.1 Company Overview
7.5.2 Financial Analysis
7.5.3 Segmental and Regional Analysis
7.5.4 Research & Development Expense
7.5.5 SWOT Analysis
7.6 Sumitomo Electric Industries, Ltd.
7.6.1 Company Overview
7.6.2 Financial Analysis
7.6.3 Segmental and Regional Analysis
7.6.4 Research & Development Expenses
7.6.5 Swot Analysis
7.7 Analog Devices, Inc.
7.7.1 Company Overview
7.7.2 Financial Analysis
7.7.3 Regional Analysis
7.7.4 Research & Development Expenses
7.7.5 SWOT Analysis
7.8 Intel Corporation
7.8.1 Company Overview
7.8.2 Financial Analysis
7.8.3 Segmental and Regional Analysis
7.8.4 Research & Development Expenses
7.8.5 SWOT Analysis
7.9 NXP Semiconductors N.V.
7.9.1 Company Overview
7.9.2 Financial Analysis
7.9.3 Regional Analysis
7.9.4 Research & Development Expense
7.9.5 SWOT Analysis
7.10. Mitsubishi Electric Corporation
7.10.1 Company Overview
7.10.2 Financial Analysis
7.10.3 Segmental and Regional Analysis
7.10.4 Research & Development Expense
7.10.5 SWOT Analysis
Chapter 8. Winning imperatives of High Electron Mobility Transistor Market

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